AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer
Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top e...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Phan, Bach Thang [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2017 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 46(2017), 6 vom: 18. Jan., Seite 3796-3800 |
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| Übergeordnetes Werk: |
volume:46 ; year:2017 ; number:6 ; day:18 ; month:01 ; pages:3796-3800 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-016-5243-5 |
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OLC2042353388 |
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| 520 | |a Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. | ||
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10.1007/s11664-016-5243-5 doi (DE-627)OLC2042353388 (DE-He213)s11664-016-5243-5-p DE-627 ger DE-627 rakwb eng 670 VZ Phan, Bach Thang verfasserin aut AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. Resistive switching polaron hopping conduction variable-range hopping Eom, Ki Tae aut Lee, Jaichan aut Enthalten in Journal of electronic materials Springer US, 1972 46(2017), 6 vom: 18. Jan., Seite 3796-3800 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2017 number:6 day:18 month:01 pages:3796-3800 https://doi.org/10.1007/s11664-016-5243-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2017 6 18 01 3796-3800 |
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10.1007/s11664-016-5243-5 doi (DE-627)OLC2042353388 (DE-He213)s11664-016-5243-5-p DE-627 ger DE-627 rakwb eng 670 VZ Phan, Bach Thang verfasserin aut AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. Resistive switching polaron hopping conduction variable-range hopping Eom, Ki Tae aut Lee, Jaichan aut Enthalten in Journal of electronic materials Springer US, 1972 46(2017), 6 vom: 18. Jan., Seite 3796-3800 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2017 number:6 day:18 month:01 pages:3796-3800 https://doi.org/10.1007/s11664-016-5243-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2017 6 18 01 3796-3800 |
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10.1007/s11664-016-5243-5 doi (DE-627)OLC2042353388 (DE-He213)s11664-016-5243-5-p DE-627 ger DE-627 rakwb eng 670 VZ Phan, Bach Thang verfasserin aut AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. Resistive switching polaron hopping conduction variable-range hopping Eom, Ki Tae aut Lee, Jaichan aut Enthalten in Journal of electronic materials Springer US, 1972 46(2017), 6 vom: 18. Jan., Seite 3796-3800 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2017 number:6 day:18 month:01 pages:3796-3800 https://doi.org/10.1007/s11664-016-5243-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2017 6 18 01 3796-3800 |
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10.1007/s11664-016-5243-5 doi (DE-627)OLC2042353388 (DE-He213)s11664-016-5243-5-p DE-627 ger DE-627 rakwb eng 670 VZ Phan, Bach Thang verfasserin aut AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. Resistive switching polaron hopping conduction variable-range hopping Eom, Ki Tae aut Lee, Jaichan aut Enthalten in Journal of electronic materials Springer US, 1972 46(2017), 6 vom: 18. Jan., Seite 3796-3800 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2017 number:6 day:18 month:01 pages:3796-3800 https://doi.org/10.1007/s11664-016-5243-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2017 6 18 01 3796-3800 |
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10.1007/s11664-016-5243-5 doi (DE-627)OLC2042353388 (DE-He213)s11664-016-5243-5-p DE-627 ger DE-627 rakwb eng 670 VZ Phan, Bach Thang verfasserin aut AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. Resistive switching polaron hopping conduction variable-range hopping Eom, Ki Tae aut Lee, Jaichan aut Enthalten in Journal of electronic materials Springer US, 1972 46(2017), 6 vom: 18. Jan., Seite 3796-3800 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:46 year:2017 number:6 day:18 month:01 pages:3796-3800 https://doi.org/10.1007/s11664-016-5243-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 46 2017 6 18 01 3796-3800 |
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AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer |
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Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. © The Minerals, Metals & Materials Society 2017 |
| abstractGer |
Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. © The Minerals, Metals & Materials Society 2017 |
| abstract_unstemmed |
Abstract The ac electrical conduction of Cr-doped $ SrTiO_{3} $ thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped $ SrTiO_{3} $ (Cr-STO) thin films with an ultra-thin (∼2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-$ SrTiO_{3−δ} $, and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-$ SrTiO_{3} $ layer. © The Minerals, Metals & Materials Society 2017 |
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AC Electrical Conduction of Cr-Doped $ SrTiO_{3} $ Thin Films with an Oxygen-Deficient Interface Layer |
| url |
https://doi.org/10.1007/s11664-016-5243-5 |
| remote_bool |
false |
| author2 |
Eom, Ki Tae Lee, Jaichan |
| author2Str |
Eom, Ki Tae Lee, Jaichan |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11664-016-5243-5 |
| up_date |
2024-07-03T14:51:24.784Z |
| _version_ |
1803569892988813312 |
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