Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment
Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices co...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhao, Xuewei [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2017 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© The Minerals, Metals & Materials Society 2017 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 47(2017), 1 vom: 31. Okt., Seite 142-147 |
|---|---|
| Übergeordnetes Werk: |
volume:47 ; year:2017 ; number:1 ; day:31 ; month:10 ; pages:142-147 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-017-5885-y |
|---|
| Katalog-ID: |
OLC2042359009 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2042359009 | ||
| 003 | DE-627 | ||
| 005 | 20230401130337.0 | ||
| 007 | tu | ||
| 008 | 200820s2017 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s11664-017-5885-y |2 doi | |
| 035 | |a (DE-627)OLC2042359009 | ||
| 035 | |a (DE-He213)s11664-017-5885-y-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Zhao, Xuewei |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| 264 | 1 | |c 2017 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © The Minerals, Metals & Materials Society 2017 | ||
| 520 | |a Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. | ||
| 650 | 4 | |a Through silicon via | |
| 650 | 4 | |a reliability | |
| 650 | 4 | |a stress | |
| 650 | 4 | |a raman spectroscopy | |
| 700 | 1 | |a Ma, Limin |4 aut | |
| 700 | 1 | |a Wang, Yishu |4 aut | |
| 700 | 1 | |a Guo, Fu |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Springer US, 1972 |g 47(2017), 1 vom: 31. Okt., Seite 142-147 |w (DE-627)129398233 |w (DE-600)186069-0 |w (DE-576)014781387 |x 0361-5235 |7 nnns |
| 773 | 1 | 8 | |g volume:47 |g year:2017 |g number:1 |g day:31 |g month:10 |g pages:142-147 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s11664-017-5885-y |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 47 |j 2017 |e 1 |b 31 |c 10 |h 142-147 | ||
| author_variant |
x z xz l m lm y w yw f g fg |
|---|---|
| matchkey_str |
article:03615235:2017----::fetfhramcaiabhvosfuntesitiuinnuildhogsl |
| hierarchy_sort_str |
2017 |
| publishDate |
2017 |
| allfields |
10.1007/s11664-017-5885-y doi (DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, Xuewei verfasserin aut Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. Through silicon via reliability stress raman spectroscopy Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of electronic materials Springer US, 1972 47(2017), 1 vom: 31. Okt., Seite 142-147 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:47 year:2017 number:1 day:31 month:10 pages:142-147 https://doi.org/10.1007/s11664-017-5885-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 47 2017 1 31 10 142-147 |
| spelling |
10.1007/s11664-017-5885-y doi (DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, Xuewei verfasserin aut Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. Through silicon via reliability stress raman spectroscopy Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of electronic materials Springer US, 1972 47(2017), 1 vom: 31. Okt., Seite 142-147 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:47 year:2017 number:1 day:31 month:10 pages:142-147 https://doi.org/10.1007/s11664-017-5885-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 47 2017 1 31 10 142-147 |
| allfields_unstemmed |
10.1007/s11664-017-5885-y doi (DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, Xuewei verfasserin aut Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. Through silicon via reliability stress raman spectroscopy Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of electronic materials Springer US, 1972 47(2017), 1 vom: 31. Okt., Seite 142-147 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:47 year:2017 number:1 day:31 month:10 pages:142-147 https://doi.org/10.1007/s11664-017-5885-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 47 2017 1 31 10 142-147 |
| allfieldsGer |
10.1007/s11664-017-5885-y doi (DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, Xuewei verfasserin aut Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. Through silicon via reliability stress raman spectroscopy Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of electronic materials Springer US, 1972 47(2017), 1 vom: 31. Okt., Seite 142-147 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:47 year:2017 number:1 day:31 month:10 pages:142-147 https://doi.org/10.1007/s11664-017-5885-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 47 2017 1 31 10 142-147 |
| allfieldsSound |
10.1007/s11664-017-5885-y doi (DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p DE-627 ger DE-627 rakwb eng 670 VZ Zhao, Xuewei verfasserin aut Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society 2017 Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. Through silicon via reliability stress raman spectroscopy Ma, Limin aut Wang, Yishu aut Guo, Fu aut Enthalten in Journal of electronic materials Springer US, 1972 47(2017), 1 vom: 31. Okt., Seite 142-147 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:47 year:2017 number:1 day:31 month:10 pages:142-147 https://doi.org/10.1007/s11664-017-5885-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 47 2017 1 31 10 142-147 |
| language |
English |
| source |
Enthalten in Journal of electronic materials 47(2017), 1 vom: 31. Okt., Seite 142-147 volume:47 year:2017 number:1 day:31 month:10 pages:142-147 |
| sourceStr |
Enthalten in Journal of electronic materials 47(2017), 1 vom: 31. Okt., Seite 142-147 volume:47 year:2017 number:1 day:31 month:10 pages:142-147 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Through silicon via reliability stress raman spectroscopy |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of electronic materials |
| authorswithroles_txt_mv |
Zhao, Xuewei @@aut@@ Ma, Limin @@aut@@ Wang, Yishu @@aut@@ Guo, Fu @@aut@@ |
| publishDateDaySort_date |
2017-10-31T00:00:00Z |
| hierarchy_top_id |
129398233 |
| dewey-sort |
3670 |
| id |
OLC2042359009 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042359009</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401130337.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-017-5885-y</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042359009</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-017-5885-y-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhao, Xuewei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Through silicon via</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">stress</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">raman spectroscopy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Limin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Yishu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guo, Fu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer US, 1972</subfield><subfield code="g">47(2017), 1 vom: 31. Okt., Seite 142-147</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:47</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:1</subfield><subfield code="g">day:31</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:142-147</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11664-017-5885-y</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">47</subfield><subfield code="j">2017</subfield><subfield code="e">1</subfield><subfield code="b">31</subfield><subfield code="c">10</subfield><subfield code="h">142-147</subfield></datafield></record></collection>
|
| author |
Zhao, Xuewei |
| spellingShingle |
Zhao, Xuewei ddc 670 misc Through silicon via misc reliability misc stress misc raman spectroscopy Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| authorStr |
Zhao, Xuewei |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129398233 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0361-5235 |
| topic_title |
670 VZ Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment Through silicon via reliability stress raman spectroscopy |
| topic |
ddc 670 misc Through silicon via misc reliability misc stress misc raman spectroscopy |
| topic_unstemmed |
ddc 670 misc Through silicon via misc reliability misc stress misc raman spectroscopy |
| topic_browse |
ddc 670 misc Through silicon via misc reliability misc stress misc raman spectroscopy |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of electronic materials |
| hierarchy_parent_id |
129398233 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of electronic materials |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 |
| title |
Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| ctrlnum |
(DE-627)OLC2042359009 (DE-He213)s11664-017-5885-y-p |
| title_full |
Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| author_sort |
Zhao, Xuewei |
| journal |
Journal of electronic materials |
| journalStr |
Journal of electronic materials |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2017 |
| contenttype_str_mv |
txt |
| container_start_page |
142 |
| author_browse |
Zhao, Xuewei Ma, Limin Wang, Yishu Guo, Fu |
| container_volume |
47 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Zhao, Xuewei |
| doi_str_mv |
10.1007/s11664-017-5885-y |
| dewey-full |
670 |
| title_sort |
effect of thermal mechanical behaviors of cu on stress distribution in cu-filled through-silicon vias under heat treatment |
| title_auth |
Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| abstract |
Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. © The Minerals, Metals & Materials Society 2017 |
| abstractGer |
Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. © The Minerals, Metals & Materials Society 2017 |
| abstract_unstemmed |
Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si. © The Minerals, Metals & Materials Society 2017 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 |
| container_issue |
1 |
| title_short |
Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment |
| url |
https://doi.org/10.1007/s11664-017-5885-y |
| remote_bool |
false |
| author2 |
Ma, Limin Wang, Yishu Guo, Fu |
| author2Str |
Ma, Limin Wang, Yishu Guo, Fu |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11664-017-5885-y |
| up_date |
2024-07-03T14:52:58.204Z |
| _version_ |
1803569990945734656 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042359009</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401130337.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-017-5885-y</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042359009</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-017-5885-y-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhao, Xuewei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of Thermal Mechanical Behaviors of Cu on Stress Distribution in Cu-Filled Through-Silicon Vias Under Heat Treatment</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© The Minerals, Metals & Materials Society 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Through-silicon vias (TSV) are facing unexpected thermo-mechanical reliability problems due to the coefficient of thermal expansion (CTE) mismatch between various materials in TSVs. During applications, thermal stresses induced by CTE mismatch will have a negative impact on other devices connecting with TSVs, even leading to failure. Therefore, it is essential to investigate the stress distribution evolution in the TSV structure under thermal loads. In this report, TSVs were heated to 450°C at different heating rates, then cooled down to room temperature after a 30-min dwelling. After heating treatment, TSV samples exhibited different Cu deformation behaviors, including Cu intrusion and protrusion. Based on the different Cu deformation behaviors, stress in Si around Cu vias of these samples was measured and analyzed. Results analyzed by Raman spectrums showed that the stress distribution changes were associated with Cu deformation behaviors. In the area near the Cu via, Cu protrusion behavior might aggravate the stress in Si obtained from the Raman measurement, while Cu intrusion might alleviate the stress. The possible reason was that in this area, the compressive stress $$ \sigma_{\theta }$$ induced by thermal loads might be the dominant stress. In the area far from the Cu via, thermal loads tended to result in a tensile stress state in Si.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Through silicon via</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">stress</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">raman spectroscopy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Limin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Yishu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guo, Fu</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer US, 1972</subfield><subfield code="g">47(2017), 1 vom: 31. Okt., Seite 142-147</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:47</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:1</subfield><subfield code="g">day:31</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:142-147</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11664-017-5885-y</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">47</subfield><subfield code="j">2017</subfield><subfield code="e">1</subfield><subfield code="b">31</subfield><subfield code="c">10</subfield><subfield code="h">142-147</subfield></datafield></record></collection>
|
| score |
7.4000244 |