On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry
Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chrobak, Ł. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
nondestructive optical characterization optical absorption coefficient |
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| Anmerkung: |
© The Author(s) 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 48(2019), 8 vom: 11. Juni, Seite 5273-5278 |
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| Übergeordnetes Werk: |
volume:48 ; year:2019 ; number:8 ; day:11 ; month:06 ; pages:5273-5278 |
| Links: |
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| DOI / URN: |
10.1007/s11664-019-07333-0 |
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OLC2042373273 |
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| 520 | |a Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. | ||
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10.1007/s11664-019-07333-0 doi (DE-627)OLC2042373273 (DE-He213)s11664-019-07333-0-p DE-627 ger DE-627 rakwb eng 670 VZ Chrobak, Ł. verfasserin aut On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s) 2019 Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. Ion implanted silicon nondestructive optical characterization optical absorption coefficient photo thermal infrared radiometry technique implanted areas imaging Maliński, M. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 8 vom: 11. Juni, Seite 5273-5278 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:8 day:11 month:06 pages:5273-5278 https://doi.org/10.1007/s11664-019-07333-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 8 11 06 5273-5278 |
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10.1007/s11664-019-07333-0 doi (DE-627)OLC2042373273 (DE-He213)s11664-019-07333-0-p DE-627 ger DE-627 rakwb eng 670 VZ Chrobak, Ł. verfasserin aut On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s) 2019 Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. Ion implanted silicon nondestructive optical characterization optical absorption coefficient photo thermal infrared radiometry technique implanted areas imaging Maliński, M. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 8 vom: 11. Juni, Seite 5273-5278 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:8 day:11 month:06 pages:5273-5278 https://doi.org/10.1007/s11664-019-07333-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 8 11 06 5273-5278 |
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10.1007/s11664-019-07333-0 doi (DE-627)OLC2042373273 (DE-He213)s11664-019-07333-0-p DE-627 ger DE-627 rakwb eng 670 VZ Chrobak, Ł. verfasserin aut On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s) 2019 Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. Ion implanted silicon nondestructive optical characterization optical absorption coefficient photo thermal infrared radiometry technique implanted areas imaging Maliński, M. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 8 vom: 11. Juni, Seite 5273-5278 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:8 day:11 month:06 pages:5273-5278 https://doi.org/10.1007/s11664-019-07333-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 8 11 06 5273-5278 |
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10.1007/s11664-019-07333-0 doi (DE-627)OLC2042373273 (DE-He213)s11664-019-07333-0-p DE-627 ger DE-627 rakwb eng 670 VZ Chrobak, Ł. verfasserin aut On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s) 2019 Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. Ion implanted silicon nondestructive optical characterization optical absorption coefficient photo thermal infrared radiometry technique implanted areas imaging Maliński, M. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 8 vom: 11. Juni, Seite 5273-5278 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:8 day:11 month:06 pages:5273-5278 https://doi.org/10.1007/s11664-019-07333-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 8 11 06 5273-5278 |
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10.1007/s11664-019-07333-0 doi (DE-627)OLC2042373273 (DE-He213)s11664-019-07333-0-p DE-627 ger DE-627 rakwb eng 670 VZ Chrobak, Ł. verfasserin aut On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Author(s) 2019 Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. Ion implanted silicon nondestructive optical characterization optical absorption coefficient photo thermal infrared radiometry technique implanted areas imaging Maliński, M. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 8 vom: 11. Juni, Seite 5273-5278 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:8 day:11 month:06 pages:5273-5278 https://doi.org/10.1007/s11664-019-07333-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 8 11 06 5273-5278 |
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on investigations of the optical absorption coefficient of gold and germanium implanted silicon with the use of the non-destructive contactless photo thermal infrared radiometry |
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On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry |
| abstract |
Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. © The Author(s) 2019 |
| abstractGer |
Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. © The Author(s) 2019 |
| abstract_unstemmed |
Abstract In this paper results of investigations of $ Au^{2+} $ and $ Ge^{+} $ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers. © The Author(s) 2019 |
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On Investigations of the Optical Absorption Coefficient of Gold and Germanium Implanted Silicon with the Use of the Non-destructive Contactless Photo Thermal Infrared Radiometry |
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https://doi.org/10.1007/s11664-019-07333-0 |
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Maliński, M. |
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10.1007/s11664-019-07333-0 |
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2024-07-03T14:57:04.810Z |
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