In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe
Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−...
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| Autor*in: |
Jacobs, R. N. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Anmerkung: |
© This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Springer US, 1972, 48(2019), 10 vom: 21. Juni, Seite 6138-6144 |
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| Übergeordnetes Werk: |
volume:48 ; year:2019 ; number:10 ; day:21 ; month:06 ; pages:6138-6144 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11664-019-07354-9 |
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| Katalog-ID: |
OLC2042375195 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2042375195 | ||
| 003 | DE-627 | ||
| 005 | 20230401130557.0 | ||
| 007 | tu | ||
| 008 | 200820s2019 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/s11664-019-07354-9 |2 doi | |
| 035 | |a (DE-627)OLC2042375195 | ||
| 035 | |a (DE-He213)s11664-019-07354-9-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Jacobs, R. N. |e verfasserin |0 (orcid)0000-0001-7266-754X |4 aut | |
| 245 | 1 | 0 | |a In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| 264 | 1 | |c 2019 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 | ||
| 520 | |a Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. | ||
| 650 | 4 | |a CdZnTe substrate | |
| 650 | 4 | |a HgCdTe | |
| 650 | 4 | |a band-edge | |
| 650 | 4 | |a MBE | |
| 650 | 4 | |a metrology | |
| 700 | 1 | |a Pinkie, B. |4 aut | |
| 700 | 1 | |a Arias, J. |4 aut | |
| 700 | 1 | |a Benson, J. D. |4 aut | |
| 700 | 1 | |a Almeida, L. A. |4 aut | |
| 700 | 1 | |a Brown, A. E. |4 aut | |
| 700 | 1 | |a Stoltz, A. J. |4 aut | |
| 700 | 1 | |a Wissman, B. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of electronic materials |d Springer US, 1972 |g 48(2019), 10 vom: 21. Juni, Seite 6138-6144 |w (DE-627)129398233 |w (DE-600)186069-0 |w (DE-576)014781387 |x 0361-5235 |7 nnns |
| 773 | 1 | 8 | |g volume:48 |g year:2019 |g number:10 |g day:21 |g month:06 |g pages:6138-6144 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/s11664-019-07354-9 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 48 |j 2019 |e 10 |b 21 |c 06 |h 6138-6144 | ||
| author_variant |
r n j rn rnj b p bp j a ja j d b jd jdb l a a la laa a e b ae aeb a j s aj ajs b w bw |
|---|---|
| matchkey_str |
article:03615235:2019----::niuaddeoioigfd1z_tsbtaefroeu |
| hierarchy_sort_str |
2019 |
| publishDate |
2019 |
| allfields |
10.1007/s11664-019-07354-9 doi (DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R. N. verfasserin (orcid)0000-0001-7266-754X aut In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. CdZnTe substrate HgCdTe band-edge MBE metrology Pinkie, B. aut Arias, J. aut Benson, J. D. aut Almeida, L. A. aut Brown, A. E. aut Stoltz, A. J. aut Wissman, B. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 10 vom: 21. Juni, Seite 6138-6144 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 https://doi.org/10.1007/s11664-019-07354-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 10 21 06 6138-6144 |
| spelling |
10.1007/s11664-019-07354-9 doi (DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R. N. verfasserin (orcid)0000-0001-7266-754X aut In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. CdZnTe substrate HgCdTe band-edge MBE metrology Pinkie, B. aut Arias, J. aut Benson, J. D. aut Almeida, L. A. aut Brown, A. E. aut Stoltz, A. J. aut Wissman, B. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 10 vom: 21. Juni, Seite 6138-6144 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 https://doi.org/10.1007/s11664-019-07354-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 10 21 06 6138-6144 |
| allfields_unstemmed |
10.1007/s11664-019-07354-9 doi (DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R. N. verfasserin (orcid)0000-0001-7266-754X aut In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. CdZnTe substrate HgCdTe band-edge MBE metrology Pinkie, B. aut Arias, J. aut Benson, J. D. aut Almeida, L. A. aut Brown, A. E. aut Stoltz, A. J. aut Wissman, B. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 10 vom: 21. Juni, Seite 6138-6144 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 https://doi.org/10.1007/s11664-019-07354-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 10 21 06 6138-6144 |
| allfieldsGer |
10.1007/s11664-019-07354-9 doi (DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R. N. verfasserin (orcid)0000-0001-7266-754X aut In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. CdZnTe substrate HgCdTe band-edge MBE metrology Pinkie, B. aut Arias, J. aut Benson, J. D. aut Almeida, L. A. aut Brown, A. E. aut Stoltz, A. J. aut Wissman, B. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 10 vom: 21. Juni, Seite 6138-6144 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 https://doi.org/10.1007/s11664-019-07354-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 10 21 06 6138-6144 |
| allfieldsSound |
10.1007/s11664-019-07354-9 doi (DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p DE-627 ger DE-627 rakwb eng 670 VZ Jacobs, R. N. verfasserin (orcid)0000-0001-7266-754X aut In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe 2019 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. CdZnTe substrate HgCdTe band-edge MBE metrology Pinkie, B. aut Arias, J. aut Benson, J. D. aut Almeida, L. A. aut Brown, A. E. aut Stoltz, A. J. aut Wissman, B. aut Enthalten in Journal of electronic materials Springer US, 1972 48(2019), 10 vom: 21. Juni, Seite 6138-6144 (DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 0361-5235 nnns volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 https://doi.org/10.1007/s11664-019-07354-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 AR 48 2019 10 21 06 6138-6144 |
| language |
English |
| source |
Enthalten in Journal of electronic materials 48(2019), 10 vom: 21. Juni, Seite 6138-6144 volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 |
| sourceStr |
Enthalten in Journal of electronic materials 48(2019), 10 vom: 21. Juni, Seite 6138-6144 volume:48 year:2019 number:10 day:21 month:06 pages:6138-6144 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
CdZnTe substrate HgCdTe band-edge MBE metrology |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of electronic materials |
| authorswithroles_txt_mv |
Jacobs, R. N. @@aut@@ Pinkie, B. @@aut@@ Arias, J. @@aut@@ Benson, J. D. @@aut@@ Almeida, L. A. @@aut@@ Brown, A. E. @@aut@@ Stoltz, A. J. @@aut@@ Wissman, B. @@aut@@ |
| publishDateDaySort_date |
2019-06-21T00:00:00Z |
| hierarchy_top_id |
129398233 |
| dewey-sort |
3670 |
| id |
OLC2042375195 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042375195</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401130557.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-019-07354-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042375195</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-019-07354-9-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jacobs, R. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7266-754X</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CdZnTe substrate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HgCdTe</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">band-edge</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MBE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">metrology</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pinkie, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arias, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Benson, J. D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Almeida, L. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, A. E.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stoltz, A. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wissman, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer US, 1972</subfield><subfield code="g">48(2019), 10 vom: 21. Juni, Seite 6138-6144</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:48</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:10</subfield><subfield code="g">day:21</subfield><subfield code="g">month:06</subfield><subfield code="g">pages:6138-6144</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11664-019-07354-9</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">48</subfield><subfield code="j">2019</subfield><subfield code="e">10</subfield><subfield code="b">21</subfield><subfield code="c">06</subfield><subfield code="h">6138-6144</subfield></datafield></record></collection>
|
| author |
Jacobs, R. N. |
| spellingShingle |
Jacobs, R. N. ddc 670 misc CdZnTe substrate misc HgCdTe misc band-edge misc MBE misc metrology In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| authorStr |
Jacobs, R. N. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129398233 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0361-5235 |
| topic_title |
670 VZ In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe CdZnTe substrate HgCdTe band-edge MBE metrology |
| topic |
ddc 670 misc CdZnTe substrate misc HgCdTe misc band-edge misc MBE misc metrology |
| topic_unstemmed |
ddc 670 misc CdZnTe substrate misc HgCdTe misc band-edge misc MBE misc metrology |
| topic_browse |
ddc 670 misc CdZnTe substrate misc HgCdTe misc band-edge misc MBE misc metrology |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of electronic materials |
| hierarchy_parent_id |
129398233 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of electronic materials |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129398233 (DE-600)186069-0 (DE-576)014781387 |
| title |
In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| ctrlnum |
(DE-627)OLC2042375195 (DE-He213)s11664-019-07354-9-p |
| title_full |
In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| author_sort |
Jacobs, R. N. |
| journal |
Journal of electronic materials |
| journalStr |
Journal of electronic materials |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2019 |
| contenttype_str_mv |
txt |
| container_start_page |
6138 |
| author_browse |
Jacobs, R. N. Pinkie, B. Arias, J. Benson, J. D. Almeida, L. A. Brown, A. E. Stoltz, A. J. Wissman, B. |
| container_volume |
48 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Jacobs, R. N. |
| doi_str_mv |
10.1007/s11664-019-07354-9 |
| normlink |
(ORCID)0000-0001-7266-754X |
| normlink_prefix_str_mv |
(orcid)0000-0001-7266-754X |
| dewey-full |
670 |
| title_sort |
in situ band-edge monitoring of $ cd_{1−y} $$ zn_{y} $te substrates for molecular beam epitaxy of hgcdte |
| title_auth |
In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| abstract |
Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 |
| abstractGer |
Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 |
| abstract_unstemmed |
Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material. © This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 |
| container_issue |
10 |
| title_short |
In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe |
| url |
https://doi.org/10.1007/s11664-019-07354-9 |
| remote_bool |
false |
| author2 |
Pinkie, B. Arias, J. Benson, J. D. Almeida, L. A. Brown, A. E. Stoltz, A. J. Wissman, B. |
| author2Str |
Pinkie, B. Arias, J. Benson, J. D. Almeida, L. A. Brown, A. E. Stoltz, A. J. Wissman, B. |
| ppnlink |
129398233 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/s11664-019-07354-9 |
| up_date |
2024-07-03T14:57:38.023Z |
| _version_ |
1803570284359319553 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2042375195</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230401130557.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2019 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-019-07354-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2042375195</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)s11664-019-07354-9-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jacobs, R. N.</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-7266-754X</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">In Situ Band-Edge Monitoring of $ Cd_{1−y} $$ Zn_{y} $Te Substrates for Molecular Beam Epitaxy of HgCdTe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© This is a U.S. government work and its text is not subject to copyright protection in the United States; however, its text may be subject to foreign copyright protection 2019</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area $ Cd_{1−y} $$ Zn_{y} $Te(211)B substrates up to and exceeding 8 × 8 $ cm^{2} $ brings new challenges from the perspective of MBE growth of $ Hg_{1−x} $$ Cd_{x} $Te. Localized variation of the Zn concentration, even less than y = 0.01, can potentially cause variation in lattice-misfit with the HgCdTe epi-layers potentially resulting in ∼ 10 × difference in etch-pit density. Variation in Zn concentration is expected to be greater over larger substrates, and thus local differences in dislocation density may also be expected. The substrate Zn concentration has been determined using in situ band-edge measurement prior to nucleation of HgCdTe. Ex situ infrared transmission spectra has been used to confirm the validity of in situ band-edge wavelength measurements. We also examine the usefulness of band-edge thermometry (BET), for monitoring substrate temperature during Te/oxide desorption and for nucleation of HgCdTe epi-layers. In principle, knowledge of the exact Zn content across the largest area of the substrate, allows for tuning growth parameters to maximize yield of perfectly lattice-matched material.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CdZnTe substrate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HgCdTe</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">band-edge</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MBE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">metrology</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pinkie, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Arias, J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Benson, J. D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Almeida, L. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Brown, A. E.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stoltz, A. J.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wissman, B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Springer US, 1972</subfield><subfield code="g">48(2019), 10 vom: 21. Juni, Seite 6138-6144</subfield><subfield code="w">(DE-627)129398233</subfield><subfield code="w">(DE-600)186069-0</subfield><subfield code="w">(DE-576)014781387</subfield><subfield code="x">0361-5235</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:48</subfield><subfield code="g">year:2019</subfield><subfield code="g">number:10</subfield><subfield code="g">day:21</subfield><subfield code="g">month:06</subfield><subfield code="g">pages:6138-6144</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/s11664-019-07354-9</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">48</subfield><subfield code="j">2019</subfield><subfield code="e">10</subfield><subfield code="b">21</subfield><subfield code="c">06</subfield><subfield code="h">6138-6144</subfield></datafield></record></collection>
|
| score |
7.399349 |