Low temperature preparation of stabilized zirconia
Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per c...
Ausführliche Beschreibung
Autor*in: |
Dongare, M. K. [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
1984 |
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Schlagwörter: |
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Anmerkung: |
© Chapman and Hall Ltd 1984 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 19(1984), 1 vom: Jan., Seite 49-56 |
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Übergeordnetes Werk: |
volume:19 ; year:1984 ; number:1 ; month:01 ; pages:49-56 |
Links: |
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DOI / URN: |
10.1007/BF00552993 |
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Katalog-ID: |
OLC2046126912 |
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520 | |a Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. | ||
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10.1007/BF00552993 doi (DE-627)OLC2046126912 (DE-He213)BF00552993-p DE-627 ger DE-627 rakwb eng 670 VZ Dongare, M. K. verfasserin aut Low temperature preparation of stabilized zirconia 1984 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1984 Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. Oxygen Polymer Zirconia Activation Energy Thermal Decomposition Sinha, A. P. B. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 19(1984), 1 vom: Jan., Seite 49-56 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:19 year:1984 number:1 month:01 pages:49-56 https://doi.org/10.1007/BF00552993 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 19 1984 1 01 49-56 |
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10.1007/BF00552993 doi (DE-627)OLC2046126912 (DE-He213)BF00552993-p DE-627 ger DE-627 rakwb eng 670 VZ Dongare, M. K. verfasserin aut Low temperature preparation of stabilized zirconia 1984 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1984 Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. Oxygen Polymer Zirconia Activation Energy Thermal Decomposition Sinha, A. P. B. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 19(1984), 1 vom: Jan., Seite 49-56 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:19 year:1984 number:1 month:01 pages:49-56 https://doi.org/10.1007/BF00552993 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 19 1984 1 01 49-56 |
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10.1007/BF00552993 doi (DE-627)OLC2046126912 (DE-He213)BF00552993-p DE-627 ger DE-627 rakwb eng 670 VZ Dongare, M. K. verfasserin aut Low temperature preparation of stabilized zirconia 1984 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1984 Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. Oxygen Polymer Zirconia Activation Energy Thermal Decomposition Sinha, A. P. B. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 19(1984), 1 vom: Jan., Seite 49-56 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:19 year:1984 number:1 month:01 pages:49-56 https://doi.org/10.1007/BF00552993 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 19 1984 1 01 49-56 |
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10.1007/BF00552993 doi (DE-627)OLC2046126912 (DE-He213)BF00552993-p DE-627 ger DE-627 rakwb eng 670 VZ Dongare, M. K. verfasserin aut Low temperature preparation of stabilized zirconia 1984 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1984 Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. Oxygen Polymer Zirconia Activation Energy Thermal Decomposition Sinha, A. P. B. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 19(1984), 1 vom: Jan., Seite 49-56 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:19 year:1984 number:1 month:01 pages:49-56 https://doi.org/10.1007/BF00552993 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 19 1984 1 01 49-56 |
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10.1007/BF00552993 doi (DE-627)OLC2046126912 (DE-He213)BF00552993-p DE-627 ger DE-627 rakwb eng 670 VZ Dongare, M. K. verfasserin aut Low temperature preparation of stabilized zirconia 1984 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1984 Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. Oxygen Polymer Zirconia Activation Energy Thermal Decomposition Sinha, A. P. B. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 19(1984), 1 vom: Jan., Seite 49-56 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:19 year:1984 number:1 month:01 pages:49-56 https://doi.org/10.1007/BF00552993 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 19 1984 1 01 49-56 |
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low temperature preparation of stabilized zirconia |
title_auth |
Low temperature preparation of stabilized zirconia |
abstract |
Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. © Chapman and Hall Ltd 1984 |
abstractGer |
Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. © Chapman and Hall Ltd 1984 |
abstract_unstemmed |
Abstract The preparation of stabilized zirconia by thermal decomposition of metal alkoxides is reported. Formation of stabilized zirconia takes place at 400° C. The a.c. conductivity of the samples has been measured from 400 to 1000°C. The best conductivity is found in $ ZrO_{2} $doped with 15 per cent CaO, which at 400° C is 2.37×$ 10^{−6} $ $ Ω^{−1} $ $ cm^{−1} $ and at 1000°C is 1.26×$ 10^{−2} $ $ Ω^{−1} $ $ cm^{−1} $, with an activation energy of 1.16eV. Transport number measurements show that stabilized zirconia prepared by this method is purely an oxygen ion conductor. © Chapman and Hall Ltd 1984 |
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Low temperature preparation of stabilized zirconia |
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