On the influence of silicon on the growth of the alloy layer during hot dip aluminizing
Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure alumi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Eggeler, G. [verfasserIn] |
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| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1986 |
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| Schlagwörter: |
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| Anmerkung: |
© Chapman and Hall Ltd. 1986 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 21(1986), 9 vom: Sept., Seite 3348-3350 |
|---|---|
| Übergeordnetes Werk: |
volume:21 ; year:1986 ; number:9 ; month:09 ; pages:3348-3350 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF00553379 |
|---|
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OLC2046141431 |
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| 520 | |a Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. | ||
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| 700 | 1 | |a Kaesche, H. |4 aut | |
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10.1007/BF00553379 doi (DE-627)OLC2046141431 (DE-He213)BF00553379-p DE-627 ger DE-627 rakwb eng 670 VZ Eggeler, G. verfasserin aut On the influence of silicon on the growth of the alloy layer during hot dip aluminizing 1986 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1986 Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. Pure Aluminium Aluminium Atom Alloy Layer Iron Dissolution Iron Enrichment Auer, W. aut Kaesche, H. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 21(1986), 9 vom: Sept., Seite 3348-3350 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:21 year:1986 number:9 month:09 pages:3348-3350 https://doi.org/10.1007/BF00553379 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 21 1986 9 09 3348-3350 |
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10.1007/BF00553379 doi (DE-627)OLC2046141431 (DE-He213)BF00553379-p DE-627 ger DE-627 rakwb eng 670 VZ Eggeler, G. verfasserin aut On the influence of silicon on the growth of the alloy layer during hot dip aluminizing 1986 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1986 Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. Pure Aluminium Aluminium Atom Alloy Layer Iron Dissolution Iron Enrichment Auer, W. aut Kaesche, H. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 21(1986), 9 vom: Sept., Seite 3348-3350 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:21 year:1986 number:9 month:09 pages:3348-3350 https://doi.org/10.1007/BF00553379 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 21 1986 9 09 3348-3350 |
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10.1007/BF00553379 doi (DE-627)OLC2046141431 (DE-He213)BF00553379-p DE-627 ger DE-627 rakwb eng 670 VZ Eggeler, G. verfasserin aut On the influence of silicon on the growth of the alloy layer during hot dip aluminizing 1986 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1986 Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. Pure Aluminium Aluminium Atom Alloy Layer Iron Dissolution Iron Enrichment Auer, W. aut Kaesche, H. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 21(1986), 9 vom: Sept., Seite 3348-3350 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:21 year:1986 number:9 month:09 pages:3348-3350 https://doi.org/10.1007/BF00553379 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 21 1986 9 09 3348-3350 |
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10.1007/BF00553379 doi (DE-627)OLC2046141431 (DE-He213)BF00553379-p DE-627 ger DE-627 rakwb eng 670 VZ Eggeler, G. verfasserin aut On the influence of silicon on the growth of the alloy layer during hot dip aluminizing 1986 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1986 Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. Pure Aluminium Aluminium Atom Alloy Layer Iron Dissolution Iron Enrichment Auer, W. aut Kaesche, H. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 21(1986), 9 vom: Sept., Seite 3348-3350 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:21 year:1986 number:9 month:09 pages:3348-3350 https://doi.org/10.1007/BF00553379 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 21 1986 9 09 3348-3350 |
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10.1007/BF00553379 doi (DE-627)OLC2046141431 (DE-He213)BF00553379-p DE-627 ger DE-627 rakwb eng 670 VZ Eggeler, G. verfasserin aut On the influence of silicon on the growth of the alloy layer during hot dip aluminizing 1986 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1986 Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. Pure Aluminium Aluminium Atom Alloy Layer Iron Dissolution Iron Enrichment Auer, W. aut Kaesche, H. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 21(1986), 9 vom: Sept., Seite 3348-3350 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:21 year:1986 number:9 month:09 pages:3348-3350 https://doi.org/10.1007/BF00553379 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 21 1986 9 09 3348-3350 |
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Eggeler, G. Auer, W. Kaesche, H. |
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on the influence of silicon on the growth of the alloy layer during hot dip aluminizing |
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On the influence of silicon on the growth of the alloy layer during hot dip aluminizing |
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Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. © Chapman and Hall Ltd. 1986 |
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Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. © Chapman and Hall Ltd. 1986 |
| abstract_unstemmed |
Abstract The reactions between a low alloyed steel and a pure as well as a 2% silicon containing aluminium melt where studied at 780 and 792‡ C, respectively. The velocity of the iron enrichment was the same for both cases, whereas the alloy layer growth was much faster in the case of the pure aluminium melt. After hot dip aluminizing in the 2% silicon containing aluminium melt silicon was found to be incorporated in the alloy layer. From that it is clear that silicon acts on the solid state side, when reducing the alloy layer thickness during hot dip aluminizing. © Chapman and Hall Ltd. 1986 |
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On the influence of silicon on the growth of the alloy layer during hot dip aluminizing |
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