Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $
Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour w...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hashiba, M. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1988 |
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| Schlagwörter: |
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| Anmerkung: |
© Chapman and Hall Ltd. 1988 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 23(1988), 2 vom: Feb., Seite 570-576 |
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| Übergeordnetes Werk: |
volume:23 ; year:1988 ; number:2 ; month:02 ; pages:570-576 |
| Links: |
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| DOI / URN: |
10.1007/BF01174687 |
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OLC2046152026 |
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| 520 | |a Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. | ||
| 650 | 4 | |a Polymer | |
| 650 | 4 | |a Zinc | |
| 650 | 4 | |a Al2O3 | |
| 650 | 4 | |a Fluoride | |
| 650 | 4 | |a Binary System | |
| 700 | 1 | |a Nurishi, Y. |4 aut | |
| 700 | 1 | |a Hibino, T. |4 aut | |
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10.1007/BF01174687 doi (DE-627)OLC2046152026 (DE-He213)BF01174687-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1988 Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. Polymer Zinc Al2O3 Fluoride Binary System Nurishi, Y. aut Hibino, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 23(1988), 2 vom: Feb., Seite 570-576 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:23 year:1988 number:2 month:02 pages:570-576 https://doi.org/10.1007/BF01174687 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 23 1988 2 02 570-576 |
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10.1007/BF01174687 doi (DE-627)OLC2046152026 (DE-He213)BF01174687-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1988 Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. Polymer Zinc Al2O3 Fluoride Binary System Nurishi, Y. aut Hibino, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 23(1988), 2 vom: Feb., Seite 570-576 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:23 year:1988 number:2 month:02 pages:570-576 https://doi.org/10.1007/BF01174687 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 23 1988 2 02 570-576 |
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10.1007/BF01174687 doi (DE-627)OLC2046152026 (DE-He213)BF01174687-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1988 Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. Polymer Zinc Al2O3 Fluoride Binary System Nurishi, Y. aut Hibino, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 23(1988), 2 vom: Feb., Seite 570-576 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:23 year:1988 number:2 month:02 pages:570-576 https://doi.org/10.1007/BF01174687 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 23 1988 2 02 570-576 |
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10.1007/BF01174687 doi (DE-627)OLC2046152026 (DE-He213)BF01174687-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1988 Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. Polymer Zinc Al2O3 Fluoride Binary System Nurishi, Y. aut Hibino, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 23(1988), 2 vom: Feb., Seite 570-576 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:23 year:1988 number:2 month:02 pages:570-576 https://doi.org/10.1007/BF01174687 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 23 1988 2 02 570-576 |
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10.1007/BF01174687 doi (DE-627)OLC2046152026 (DE-He213)BF01174687-p DE-627 ger DE-627 rakwb eng 670 VZ Hashiba, M. verfasserin aut Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1988 Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. Polymer Zinc Al2O3 Fluoride Binary System Nurishi, Y. aut Hibino, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 23(1988), 2 vom: Feb., Seite 570-576 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:23 year:1988 number:2 month:02 pages:570-576 https://doi.org/10.1007/BF01174687 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 23 1988 2 02 570-576 |
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Enthalten in Journal of materials science 23(1988), 2 vom: Feb., Seite 570-576 volume:23 year:1988 number:2 month:02 pages:570-576 |
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Hashiba, M. |
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Hashiba, M. ddc 670 misc Polymer misc Zinc misc Al2O3 misc Fluoride misc Binary System Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ |
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670 VZ Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ Polymer Zinc Al2O3 Fluoride Binary System |
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Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ |
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promotion of $ znal_{2} $$ o_{4} $ formation by $ alf_{3} $ |
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Promotion of $ ZnAl_{2} $$ O_{4} $ formation by $ AlF_{3} $ |
| abstract |
Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. © Chapman and Hall Ltd. 1988 |
| abstractGer |
Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. © Chapman and Hall Ltd. 1988 |
| abstract_unstemmed |
Abstract Details of the formation of $ ZnAl_{2} $$ O_{4} $ in the presence of $ AlF_{3} $ was studied for the purpose of elucidating the effect of fluoride anion on the reaction. In the ZnO-$ AlF_{3} $ binary system, sublimation of $ AlF_{3} $ and successive reaction of ZnO with $ AlF_{3} $ vapour were the first route of $ ZnAl_{2} $$ O_{4} $ formation. $ ZnAl_{2} $$ O_{4} $ formation with $ AlF_{3} $ was initiated at the ZnO-$ AlF_{3} $ interface as well as that of the ZnO-$ AlF_{3} $ binary system. This reaction was used to predict the formation of unstable zinc fluoride or zinc oxyfluoride. When the fluoride anions bound with zinc cations were transported to the surface of an $ Al_{2} $$ O_{3} $ particle, the intermediate phase was formed at the site. In addition, the vapour transport of $ AlF_{3} $ to the ZnO-$ Al_{2} $$ O_{3} $ interface was expected to form an intermediate phase containing fluoride anions such as $ Zn_{a} $$ Al_{b} $$ O_{x} $$ F_{y} $ phase. The $ ZnAl_{2} $$ O_{4} $ formation was promoted by the material transport through the intermediate phase around $ Al_{2} $$ O_{3} $ particles. © Chapman and Hall Ltd. 1988 |
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