Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering
Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Suzuki, T. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1989 |
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| Schlagwörter: |
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| Anmerkung: |
© Chapman and Hall Ltd 1989 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 24(1989), 1 vom: Jan., Seite 187-191 |
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| Übergeordnetes Werk: |
volume:24 ; year:1989 ; number:1 ; month:01 ; pages:187-191 |
| Links: |
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| DOI / URN: |
10.1007/BF00660952 |
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| Katalog-ID: |
OLC2046158113 |
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| 100 | 1 | |a Suzuki, T. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering |
| 264 | 1 | |c 1989 | |
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| 520 | |a Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). | ||
| 650 | 4 | |a Thin Film | |
| 650 | 4 | |a Glass Substrate | |
| 650 | 4 | |a Oxide Film | |
| 650 | 4 | |a Thick Film | |
| 650 | 4 | |a Indium Oxide | |
| 700 | 1 | |a Yamazaki, T. |4 aut | |
| 700 | 1 | |a Takizawa, M. |4 aut | |
| 700 | 1 | |a Kawasaki, O. |4 aut | |
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10.1007/BF00660952 doi (DE-627)OLC2046158113 (DE-He213)BF00660952-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, T. verfasserin aut Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1989 Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). Thin Film Glass Substrate Oxide Film Thick Film Indium Oxide Yamazaki, T. aut Takizawa, M. aut Kawasaki, O. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 24(1989), 1 vom: Jan., Seite 187-191 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:24 year:1989 number:1 month:01 pages:187-191 https://doi.org/10.1007/BF00660952 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 24 1989 1 01 187-191 |
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10.1007/BF00660952 doi (DE-627)OLC2046158113 (DE-He213)BF00660952-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, T. verfasserin aut Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1989 Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). Thin Film Glass Substrate Oxide Film Thick Film Indium Oxide Yamazaki, T. aut Takizawa, M. aut Kawasaki, O. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 24(1989), 1 vom: Jan., Seite 187-191 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:24 year:1989 number:1 month:01 pages:187-191 https://doi.org/10.1007/BF00660952 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 24 1989 1 01 187-191 |
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10.1007/BF00660952 doi (DE-627)OLC2046158113 (DE-He213)BF00660952-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, T. verfasserin aut Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1989 Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). Thin Film Glass Substrate Oxide Film Thick Film Indium Oxide Yamazaki, T. aut Takizawa, M. aut Kawasaki, O. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 24(1989), 1 vom: Jan., Seite 187-191 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:24 year:1989 number:1 month:01 pages:187-191 https://doi.org/10.1007/BF00660952 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 24 1989 1 01 187-191 |
| allfieldsGer |
10.1007/BF00660952 doi (DE-627)OLC2046158113 (DE-He213)BF00660952-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, T. verfasserin aut Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1989 Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). Thin Film Glass Substrate Oxide Film Thick Film Indium Oxide Yamazaki, T. aut Takizawa, M. aut Kawasaki, O. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 24(1989), 1 vom: Jan., Seite 187-191 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:24 year:1989 number:1 month:01 pages:187-191 https://doi.org/10.1007/BF00660952 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 24 1989 1 01 187-191 |
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10.1007/BF00660952 doi (DE-627)OLC2046158113 (DE-He213)BF00660952-p DE-627 ger DE-627 rakwb eng 670 VZ Suzuki, T. verfasserin aut Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering 1989 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd 1989 Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). Thin Film Glass Substrate Oxide Film Thick Film Indium Oxide Yamazaki, T. aut Takizawa, M. aut Kawasaki, O. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 24(1989), 1 vom: Jan., Seite 187-191 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:24 year:1989 number:1 month:01 pages:187-191 https://doi.org/10.1007/BF00660952 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_2333 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 24 1989 1 01 187-191 |
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English |
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Enthalten in Journal of materials science 24(1989), 1 vom: Jan., Seite 187-191 volume:24 year:1989 number:1 month:01 pages:187-191 |
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Enthalten in Journal of materials science 24(1989), 1 vom: Jan., Seite 187-191 volume:24 year:1989 number:1 month:01 pages:187-191 |
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Suzuki, T. @@aut@@ Yamazaki, T. @@aut@@ Takizawa, M. @@aut@@ Kawasaki, O. @@aut@@ |
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thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering |
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Thickness dependence of electrical properties in thin films of undoped indium oxide prepared by ion-beam sputtering |
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Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). © Chapman and Hall Ltd 1989 |
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Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). © Chapman and Hall Ltd 1989 |
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Abstract Preparation and electrical characterization of undoped indium oxide films were examined as a function of thickness and annealing. Thin films ranging from 1.1 to 113 nm thickness were deposited on glass substrates by ion-beam sputtering. Low-angle X-ray diffraction analysis in multi-layered films showed the possibility that physically continuous and almost flat films were formed even in the thinnest 1.1 nm films. Room temperature resistivity of as-deposited films decreased sharply by more than five orders of magnitude as the thickness increased from 1.1 to 5.2 nm. The 2.4 nm thick films, in its as-deposited state, showed a gradual resistivity modulation with the change of atmosphere between air and argon gas at room temperature. Annealing at 300° C for 5 h in air increased the resistivity drastically; the room temperature resistivity of 24.3 nm thick films changed from 2.2×$ 10^{−3} $ Ω cm (as-deposited) to higher than ∼ $ 10^{5} $ Ω cm (annealed). © Chapman and Hall Ltd 1989 |
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