Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition

Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and tot...
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Autor*in:	Wang, Y. [verfasserIn] Sasaki, M. Goto, T. Hirai, T.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1990

Schlagwörter:	Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour

Anmerkung:	© Chapman and Hall Ltd. 1990

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 25(1990), 11 vom: Nov., Seite 4607-4613
Übergeordnetes Werk:	volume:25 ; year:1990 ; number:11 ; month:11 ; pages:4607-4613

Links:	Volltext

DOI / URN:	10.1007/BF01129914

Katalog-ID:	OLC2046172450

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520			\|a Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results.
650		4	\|a Polymer
650		4	\|a Chemical Vapour Deposition
650		4	\|a Vapour Deposition
650		4	\|a Deposition Rate
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700	1		\|a Goto, T. \|4 aut
700	1		\|a Hirai, T. \|4 aut
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allfields	10.1007/BF01129914 doi (DE-627)OLC2046172450 (DE-He213)BF01129914-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Y. verfasserin aut Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour Sasaki, M. aut Goto, T. aut Hirai, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4607-4613 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4607-4613 https://doi.org/10.1007/BF01129914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4607-4613
spelling	10.1007/BF01129914 doi (DE-627)OLC2046172450 (DE-He213)BF01129914-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Y. verfasserin aut Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour Sasaki, M. aut Goto, T. aut Hirai, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4607-4613 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4607-4613 https://doi.org/10.1007/BF01129914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4607-4613
allfields_unstemmed	10.1007/BF01129914 doi (DE-627)OLC2046172450 (DE-He213)BF01129914-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Y. verfasserin aut Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour Sasaki, M. aut Goto, T. aut Hirai, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4607-4613 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4607-4613 https://doi.org/10.1007/BF01129914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4607-4613
allfieldsGer	10.1007/BF01129914 doi (DE-627)OLC2046172450 (DE-He213)BF01129914-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Y. verfasserin aut Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour Sasaki, M. aut Goto, T. aut Hirai, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4607-4613 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4607-4613 https://doi.org/10.1007/BF01129914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4607-4613
allfieldsSound	10.1007/BF01129914 doi (DE-627)OLC2046172450 (DE-He213)BF01129914-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Y. verfasserin aut Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. Polymer Chemical Vapour Deposition Vapour Deposition Deposition Rate Chemical Vapour Sasaki, M. aut Goto, T. aut Hirai, T. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4607-4613 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4607-4613 https://doi.org/10.1007/BF01129914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4607-4613
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title	Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition
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title_full	Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition
author_sort	Wang, Y.
journal	Journal of materials science
journalStr	Journal of materials science
lang_code	eng
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author_browse	Wang, Y. Sasaki, M. Goto, T. Hirai, T.
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author-letter	Wang, Y.
doi_str_mv	10.1007/BF01129914
dewey-full	670
title_sort	thermodynamics for the preparation of sic-c nano-composites by chemical vapour deposition
title_auth	Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition
abstract	Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. © Chapman and Hall Ltd. 1990
abstractGer	Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. © Chapman and Hall Ltd. 1990
abstract_unstemmed	Abstract SiC-C nano-composites covering every possible combination of carbon and SiC were prepared by chemical vapour deposition. The specific compositions of the deposits were controlled by changing the Si/C molar ratio in the source gases at deposition temperatures (Tdep) of 1673 to 1873 K and total gas pressures (Ptot) of 6.7 to 40 k Pa using the $ SiCl_{4} $-$ C_{3} $$ H_{8} $-$ H_{2} $ system. The prediction, based on the thermodynamic calculation on composition, morphology and deposition rate, was compared with experimental results. The optimal deposition conditions predicted by the calculations were nearly in agreement with the experimental results. © Chapman and Hall Ltd. 1990
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container_issue	11
title_short	Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour deposition
url	https://doi.org/10.1007/BF01129914
remote_bool	false
author2	Sasaki, M. Goto, T. Hirai, T.
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doi_str	10.1007/BF01129914
up_date	2024-07-04T04:25:28.082Z
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