Role of oxygen supply in high-temperature growth of compact oxide scale

Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate exp...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Gozzi, Daniele [verfasserIn] Cignini, Pier Luigi Petrucci, Lorenzo Tomellini, Massimo

Format:	Artikel
Sprache:	Englisch

Erschienen:	1990

Schlagwörter:	Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply

Anmerkung:	© Chapman and Hall Ltd. 1990

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 25(1990), 11 vom: Nov., Seite 4562-4566
Übergeordnetes Werk:	volume:25 ; year:1990 ; number:11 ; month:11 ; pages:4562-4566

Links:	Volltext

DOI / URN:	10.1007/BF01129906

Katalog-ID:	OLC2046172531

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520			\|a Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide.
650		4	\|a Zirconia
650		4	\|a Yttria
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650		4	\|a Oxygen Supply
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allfields	10.1007/BF01129906 doi (DE-627)OLC2046172531 (DE-He213)BF01129906-p DE-627 ger DE-627 rakwb eng 670 VZ Gozzi, Daniele verfasserin aut Role of oxygen supply in high-temperature growth of compact oxide scale 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply Cignini, Pier Luigi aut Petrucci, Lorenzo aut Tomellini, Massimo aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4562-4566 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4562-4566 https://doi.org/10.1007/BF01129906 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4562-4566
spelling	10.1007/BF01129906 doi (DE-627)OLC2046172531 (DE-He213)BF01129906-p DE-627 ger DE-627 rakwb eng 670 VZ Gozzi, Daniele verfasserin aut Role of oxygen supply in high-temperature growth of compact oxide scale 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply Cignini, Pier Luigi aut Petrucci, Lorenzo aut Tomellini, Massimo aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4562-4566 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4562-4566 https://doi.org/10.1007/BF01129906 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4562-4566
allfields_unstemmed	10.1007/BF01129906 doi (DE-627)OLC2046172531 (DE-He213)BF01129906-p DE-627 ger DE-627 rakwb eng 670 VZ Gozzi, Daniele verfasserin aut Role of oxygen supply in high-temperature growth of compact oxide scale 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply Cignini, Pier Luigi aut Petrucci, Lorenzo aut Tomellini, Massimo aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4562-4566 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4562-4566 https://doi.org/10.1007/BF01129906 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4562-4566
allfieldsGer	10.1007/BF01129906 doi (DE-627)OLC2046172531 (DE-He213)BF01129906-p DE-627 ger DE-627 rakwb eng 670 VZ Gozzi, Daniele verfasserin aut Role of oxygen supply in high-temperature growth of compact oxide scale 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply Cignini, Pier Luigi aut Petrucci, Lorenzo aut Tomellini, Massimo aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4562-4566 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4562-4566 https://doi.org/10.1007/BF01129906 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4562-4566
allfieldsSound	10.1007/BF01129906 doi (DE-627)OLC2046172531 (DE-He213)BF01129906-p DE-627 ger DE-627 rakwb eng 670 VZ Gozzi, Daniele verfasserin aut Role of oxygen supply in high-temperature growth of compact oxide scale 1990 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1990 Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. Zirconia Yttria Oxygen Partial Pressure Oxide Scale Oxygen Supply Cignini, Pier Luigi aut Petrucci, Lorenzo aut Tomellini, Massimo aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 25(1990), 11 vom: Nov., Seite 4562-4566 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:25 year:1990 number:11 month:11 pages:4562-4566 https://doi.org/10.1007/BF01129906 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2057 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 25 1990 11 11 4562-4566
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author	Gozzi, Daniele
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title	Role of oxygen supply in high-temperature growth of compact oxide scale
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title_full	Role of oxygen supply in high-temperature growth of compact oxide scale
author_sort	Gozzi, Daniele
journal	Journal of materials science
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author_browse	Gozzi, Daniele Cignini, Pier Luigi Petrucci, Lorenzo Tomellini, Massimo
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doi_str_mv	10.1007/BF01129906
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title_sort	role of oxygen supply in high-temperature growth of compact oxide scale
title_auth	Role of oxygen supply in high-temperature growth of compact oxide scale
abstract	Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. © Chapman and Hall Ltd. 1990
abstractGer	Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. © Chapman and Hall Ltd. 1990
abstract_unstemmed	Abstract High-temperature oxidation of metals at low oxygen impinging fluxes and low values of oxygen partial pressure were considered on the basis of the fundamental aspects of oxidation kinetics. To do this, the oxidation kinetics of copper to the monovalent oxide was studied under appropriate experimental conditions using apparatus consisting of two solid-state electrochemical cells, both with yttria stabilized zirconia as the solid electrolyte, coupled together. The cells operated as oxygen sensor and oxygen pump, respectively, in such a way that oxygen gas was generated and monitored very close to the surface of the oxidizing sample. The results obtained on copper foil at 1113 K over the oxygen pressure range 1 × $ 10^{−14} $ (highly purified argon) to 1500 Pa show a linear growth of the oxide for exposures up to 2000sec. This was tentatively explained by assuming the oxygen supply to the sample surface to be the rate limiting step, instead of the solid state diffusion into the growing oxide. © Chapman and Hall Ltd. 1990
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container_issue	11
title_short	Role of oxygen supply in high-temperature growth of compact oxide scale
url	https://doi.org/10.1007/BF01129906
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author2	Cignini, Pier Luigi Petrucci, Lorenzo Tomellini, Massimo
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up_date	2024-07-04T04:25:28.760Z
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