Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals

Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) wa...
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Gespeichert in:

Autor*in:	Endler, I. [verfasserIn] Leonhardt, A. Schönherr, M. Wolf, E.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1991

Schlagwörter:	Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer

Anmerkung:	© Chapman and Hall Ltd. 1991

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 26(1991), 3 vom: Feb., Seite 782-786
Übergeordnetes Werk:	volume:26 ; year:1991 ; number:3 ; month:02 ; pages:782-786

Links:	Volltext

DOI / URN:	10.1007/BF03163522

Katalog-ID:	OLC2046174054

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650		4	\|a Silicon Nitride
650		4	\|a Deposition Temperature
650		4	\|a Infrared Absorption Spectrum
650		4	\|a Hard Metal
650		4	\|a Silicon Nitride Layer
700	1		\|a Leonhardt, A. \|4 aut
700	1		\|a Schönherr, M. \|4 aut
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allfields	10.1007/BF03163522 doi (DE-627)OLC2046174054 (DE-He213)BF03163522-p DE-627 ger DE-627 rakwb eng 670 VZ Endler, I. verfasserin aut Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1991 Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer Leonhardt, A. aut Schönherr, M. aut Wolf, E. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 3 vom: Feb., Seite 782-786 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:3 month:02 pages:782-786 https://doi.org/10.1007/BF03163522 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 3 02 782-786
spelling	10.1007/BF03163522 doi (DE-627)OLC2046174054 (DE-He213)BF03163522-p DE-627 ger DE-627 rakwb eng 670 VZ Endler, I. verfasserin aut Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1991 Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer Leonhardt, A. aut Schönherr, M. aut Wolf, E. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 3 vom: Feb., Seite 782-786 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:3 month:02 pages:782-786 https://doi.org/10.1007/BF03163522 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 3 02 782-786
allfields_unstemmed	10.1007/BF03163522 doi (DE-627)OLC2046174054 (DE-He213)BF03163522-p DE-627 ger DE-627 rakwb eng 670 VZ Endler, I. verfasserin aut Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1991 Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer Leonhardt, A. aut Schönherr, M. aut Wolf, E. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 3 vom: Feb., Seite 782-786 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:3 month:02 pages:782-786 https://doi.org/10.1007/BF03163522 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 3 02 782-786
allfieldsGer	10.1007/BF03163522 doi (DE-627)OLC2046174054 (DE-He213)BF03163522-p DE-627 ger DE-627 rakwb eng 670 VZ Endler, I. verfasserin aut Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1991 Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer Leonhardt, A. aut Schönherr, M. aut Wolf, E. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 3 vom: Feb., Seite 782-786 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:3 month:02 pages:782-786 https://doi.org/10.1007/BF03163522 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 3 02 782-786
allfieldsSound	10.1007/BF03163522 doi (DE-627)OLC2046174054 (DE-He213)BF03163522-p DE-627 ger DE-627 rakwb eng 670 VZ Endler, I. verfasserin aut Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman and Hall Ltd. 1991 Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. Silicon Nitride Deposition Temperature Infrared Absorption Spectrum Hard Metal Silicon Nitride Layer Leonhardt, A. aut Schönherr, M. aut Wolf, E. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 3 vom: Feb., Seite 782-786 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:3 month:02 pages:782-786 https://doi.org/10.1007/BF03163522 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 3 02 782-786
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author	Endler, I.
spellingShingle	Endler, I. ddc 670 misc Silicon Nitride misc Deposition Temperature misc Infrared Absorption Spectrum misc Hard Metal misc Silicon Nitride Layer Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals
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title_sort	plasma-enhanced chemical vapour deposition of silicon nitride from $ sicl_{4} $, nitrogen and hydrogen on hard metals
title_auth	Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals
abstract	Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. © Chapman and Hall Ltd. 1991
abstractGer	Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. © Chapman and Hall Ltd. 1991
abstract_unstemmed	Abstract Silicon nitride coatings were deposited on hard metals at a reaction temperature between 873 and 1173 K by a plasma-enhanced chemical vapour deposition process operating with an r.f. discharge. The dependence of the coatings on the process parameters (deposition temperature and d. power) was investigated, in respect of phase composition, impurities in the coatings, metallographic appearance, microhardness, adhesion and layer-substrate interaction. It was found that upto a deposition temperature of 1023 K the coatings were amorphous. Above 1023 K the coatings increasingly contained crystalline regions. At 1173 K and an d. power above 200 W, the coatings were nearly completely crystalline. © Chapman and Hall Ltd. 1991
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title_short	Plasma-enhanced chemical vapour deposition of silicon nitride from $ SiCl_{4} $, nitrogen and hydrogen on hard metals
url	https://doi.org/10.1007/BF03163522
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author2	Leonhardt, A. Schönherr, M. Wolf, E.
author2Str	Leonhardt, A. Schönherr, M. Wolf, E.
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doi_str	10.1007/BF03163522
up_date	2024-07-04T04:25:41.544Z
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