Ceramic composites: $ TiB_{2} $-TiC-SiC
Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture tough...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
de Mestral, F. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1991 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© Chapman & Hall 1991 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 26(1991), 20 vom: Okt., Seite 5547-5560 |
|---|---|
| Übergeordnetes Werk: |
volume:26 ; year:1991 ; number:20 ; month:10 ; pages:5547-5560 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02403957 |
|---|
| Katalog-ID: |
OLC2046182049 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2046182049 | ||
| 003 | DE-627 | ||
| 005 | 20230503122133.0 | ||
| 007 | tu | ||
| 008 | 200820s1991 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF02403957 |2 doi | |
| 035 | |a (DE-627)OLC2046182049 | ||
| 035 | |a (DE-He213)BF02403957-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a de Mestral, F. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Ceramic composites: $ TiB_{2} $-TiC-SiC |
| 264 | 1 | |c 1991 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Chapman & Hall 1991 | ||
| 520 | |a Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. | ||
| 650 | 4 | |a Carbide | |
| 650 | 4 | |a Electrical Resistivity | |
| 650 | 4 | |a Silicon Carbide | |
| 650 | 4 | |a Ternary System | |
| 650 | 4 | |a Titanium Carbide | |
| 700 | 1 | |a Thevenot, F. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science |d Kluwer Academic Publishers, 1966 |g 26(1991), 20 vom: Okt., Seite 5547-5560 |w (DE-627)129546372 |w (DE-600)218324-9 |w (DE-576)014996774 |x 0022-2461 |7 nnns |
| 773 | 1 | 8 | |g volume:26 |g year:1991 |g number:20 |g month:10 |g pages:5547-5560 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/BF02403957 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a GBV_ILN_11 | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_4082 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4316 | ||
| 912 | |a GBV_ILN_4319 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4700 | ||
| 951 | |a AR | ||
| 952 | |d 26 |j 1991 |e 20 |c 10 |h 5547-5560 | ||
| author_variant |
m f d mf mfd f t ft |
|---|---|
| matchkey_str |
article:00222461:1991----::eaicmoietb |
| hierarchy_sort_str |
1991 |
| publishDate |
1991 |
| allfields |
10.1007/BF02403957 doi (DE-627)OLC2046182049 (DE-He213)BF02403957-p DE-627 ger DE-627 rakwb eng 670 VZ de Mestral, F. verfasserin aut Ceramic composites: $ TiB_{2} $-TiC-SiC 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1991 Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide Thevenot, F. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 20 vom: Okt., Seite 5547-5560 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:20 month:10 pages:5547-5560 https://doi.org/10.1007/BF02403957 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 20 10 5547-5560 |
| spelling |
10.1007/BF02403957 doi (DE-627)OLC2046182049 (DE-He213)BF02403957-p DE-627 ger DE-627 rakwb eng 670 VZ de Mestral, F. verfasserin aut Ceramic composites: $ TiB_{2} $-TiC-SiC 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1991 Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide Thevenot, F. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 20 vom: Okt., Seite 5547-5560 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:20 month:10 pages:5547-5560 https://doi.org/10.1007/BF02403957 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 20 10 5547-5560 |
| allfields_unstemmed |
10.1007/BF02403957 doi (DE-627)OLC2046182049 (DE-He213)BF02403957-p DE-627 ger DE-627 rakwb eng 670 VZ de Mestral, F. verfasserin aut Ceramic composites: $ TiB_{2} $-TiC-SiC 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1991 Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide Thevenot, F. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 20 vom: Okt., Seite 5547-5560 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:20 month:10 pages:5547-5560 https://doi.org/10.1007/BF02403957 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 20 10 5547-5560 |
| allfieldsGer |
10.1007/BF02403957 doi (DE-627)OLC2046182049 (DE-He213)BF02403957-p DE-627 ger DE-627 rakwb eng 670 VZ de Mestral, F. verfasserin aut Ceramic composites: $ TiB_{2} $-TiC-SiC 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1991 Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide Thevenot, F. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 20 vom: Okt., Seite 5547-5560 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:20 month:10 pages:5547-5560 https://doi.org/10.1007/BF02403957 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 20 10 5547-5560 |
| allfieldsSound |
10.1007/BF02403957 doi (DE-627)OLC2046182049 (DE-He213)BF02403957-p DE-627 ger DE-627 rakwb eng 670 VZ de Mestral, F. verfasserin aut Ceramic composites: $ TiB_{2} $-TiC-SiC 1991 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1991 Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide Thevenot, F. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 26(1991), 20 vom: Okt., Seite 5547-5560 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:26 year:1991 number:20 month:10 pages:5547-5560 https://doi.org/10.1007/BF02403957 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 26 1991 20 10 5547-5560 |
| language |
English |
| source |
Enthalten in Journal of materials science 26(1991), 20 vom: Okt., Seite 5547-5560 volume:26 year:1991 number:20 month:10 pages:5547-5560 |
| sourceStr |
Enthalten in Journal of materials science 26(1991), 20 vom: Okt., Seite 5547-5560 volume:26 year:1991 number:20 month:10 pages:5547-5560 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science |
| authorswithroles_txt_mv |
de Mestral, F. @@aut@@ Thevenot, F. @@aut@@ |
| publishDateDaySort_date |
1991-10-01T00:00:00Z |
| hierarchy_top_id |
129546372 |
| dewey-sort |
3670 |
| id |
OLC2046182049 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2046182049</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503122133.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1991 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02403957</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2046182049</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02403957-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">de Mestral, F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ceramic composites: $ TiB_{2} $-TiC-SiC</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1991</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Chapman & Hall 1991</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Resistivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon Carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ternary System</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Titanium Carbide</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Thevenot, F.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Kluwer Academic Publishers, 1966</subfield><subfield code="g">26(1991), 20 vom: Okt., Seite 5547-5560</subfield><subfield code="w">(DE-627)129546372</subfield><subfield code="w">(DE-600)218324-9</subfield><subfield code="w">(DE-576)014996774</subfield><subfield code="x">0022-2461</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:1991</subfield><subfield code="g">number:20</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:5547-5560</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02403957</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">1991</subfield><subfield code="e">20</subfield><subfield code="c">10</subfield><subfield code="h">5547-5560</subfield></datafield></record></collection>
|
| author |
de Mestral, F. |
| spellingShingle |
de Mestral, F. ddc 670 misc Carbide misc Electrical Resistivity misc Silicon Carbide misc Ternary System misc Titanium Carbide Ceramic composites: $ TiB_{2} $-TiC-SiC |
| authorStr |
de Mestral, F. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129546372 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0022-2461 |
| topic_title |
670 VZ Ceramic composites: $ TiB_{2} $-TiC-SiC Carbide Electrical Resistivity Silicon Carbide Ternary System Titanium Carbide |
| topic |
ddc 670 misc Carbide misc Electrical Resistivity misc Silicon Carbide misc Ternary System misc Titanium Carbide |
| topic_unstemmed |
ddc 670 misc Carbide misc Electrical Resistivity misc Silicon Carbide misc Ternary System misc Titanium Carbide |
| topic_browse |
ddc 670 misc Carbide misc Electrical Resistivity misc Silicon Carbide misc Ternary System misc Titanium Carbide |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science |
| hierarchy_parent_id |
129546372 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of materials science |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 |
| title |
Ceramic composites: $ TiB_{2} $-TiC-SiC |
| ctrlnum |
(DE-627)OLC2046182049 (DE-He213)BF02403957-p |
| title_full |
Ceramic composites: $ TiB_{2} $-TiC-SiC |
| author_sort |
de Mestral, F. |
| journal |
Journal of materials science |
| journalStr |
Journal of materials science |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1991 |
| contenttype_str_mv |
txt |
| container_start_page |
5547 |
| author_browse |
de Mestral, F. Thevenot, F. |
| container_volume |
26 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
de Mestral, F. |
| doi_str_mv |
10.1007/BF02403957 |
| dewey-full |
670 |
| title_sort |
ceramic composites: $ tib_{2} $-tic-sic |
| title_auth |
Ceramic composites: $ TiB_{2} $-TiC-SiC |
| abstract |
Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. © Chapman & Hall 1991 |
| abstractGer |
Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. © Chapman & Hall 1991 |
| abstract_unstemmed |
Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed. © Chapman & Hall 1991 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 |
| container_issue |
20 |
| title_short |
Ceramic composites: $ TiB_{2} $-TiC-SiC |
| url |
https://doi.org/10.1007/BF02403957 |
| remote_bool |
false |
| author2 |
Thevenot, F. |
| author2Str |
Thevenot, F. |
| ppnlink |
129546372 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF02403957 |
| up_date |
2024-07-04T04:26:52.035Z |
| _version_ |
1803621196927860736 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2046182049</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503122133.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1991 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02403957</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2046182049</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02403957-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">de Mestral, F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ceramic composites: $ TiB_{2} $-TiC-SiC</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1991</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Chapman & Hall 1991</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract In the ternary system $ TiB_{2} $-TiC-SiC, the different two-phase composites, TiC-$ TiB_{2} $, SiC-$ TiB_{2} $ and SiC-TiC exhibit remarkable mechanical properties in regard with the single phase ceramics. The evolution of those properties, i.e. modulus of rupture $ σ_{f} $, fracture toughnessK1c, critical flaw sizeac, hardnessHv, coefficient of thermal expansion α and electrical resistivity ρ, over the complete ternary diagram was investigated. A methodology of research using optimal design was used to minimize the number of composites to be elaborated. In this study, 16 samples were sufficient to empirically determine a provisional mathematical model for each property. A model, then, enables the plot of isoresponse curves in the ternary diagram. The samples were hot pressed and the optimal hot-pressing cycles were determined using densification rates against temperature curves. The concordance between computed and experimental values is excellent, e.g. a sample containing 20 mol % of $ TiB_{2} $, 55 mol % of TiC and 25 mol % of SiC has $ σ_{fexp} $ = 1080 M Pa, $ σ_{fcomp} $=1070 MPa;K1cexp=6.7 MPa $ m^{1/2} $,K1ccomp=6 M Pa $ m^{1/2} $;Hvexp=1 6.6 G Pa,Hvcomp=17.3 GPa; and $ ρ_{exp} $=57.4 μΩ cm, $ ρ_{comp} $=55 μΩm cm. Although titanium diboride does not react with silicon carbide, a strong interface bond is developed between titanium diboride and titanium carbide, and between titanium carbide and silicon carbide. This explains the bend strength evolution in the ternary system, and more particularly the fact that, in the area $ σ_{f} $ > 1000 MPa andK1c > 6 $ MPam^{1/2} $, to high SiC contents correspond to low $ TiB_{2} $ contents and conversely. The relevant microstructures will be discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Resistivity</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon Carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ternary System</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Titanium Carbide</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Thevenot, F.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Kluwer Academic Publishers, 1966</subfield><subfield code="g">26(1991), 20 vom: Okt., Seite 5547-5560</subfield><subfield code="w">(DE-627)129546372</subfield><subfield code="w">(DE-600)218324-9</subfield><subfield code="w">(DE-576)014996774</subfield><subfield code="x">0022-2461</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:1991</subfield><subfield code="g">number:20</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:5547-5560</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02403957</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">1991</subfield><subfield code="e">20</subfield><subfield code="c">10</subfield><subfield code="h">5547-5560</subfield></datafield></record></collection>
|
| score |
7.3998165 |