Photoelectrochemical reactions on semiconductor materials
Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation t...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Savadogo, O. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1992 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© Chapman & Hall 1992 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 27(1992), 17 vom: Sept., Seite 4619-4624 |
|---|---|
| Übergeordnetes Werk: |
volume:27 ; year:1992 ; number:17 ; month:09 ; pages:4619-4624 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF01165996 |
|---|
| Katalog-ID: |
OLC2046192079 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2046192079 | ||
| 003 | DE-627 | ||
| 005 | 20230503122230.0 | ||
| 007 | tu | ||
| 008 | 200820s1992 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1007/BF01165996 |2 doi | |
| 035 | |a (DE-627)OLC2046192079 | ||
| 035 | |a (DE-He213)BF01165996-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 670 |q VZ |
| 100 | 1 | |a Savadogo, O. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Photoelectrochemical reactions on semiconductor materials |
| 264 | 1 | |c 1992 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Chapman & Hall 1992 | ||
| 520 | |a Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. | ||
| 650 | 4 | |a Polymer | |
| 650 | 4 | |a Experimental Data | |
| 650 | 4 | |a Electrode Surface | |
| 650 | 4 | |a Surface State | |
| 650 | 4 | |a Surface Modification | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science |d Kluwer Academic Publishers, 1966 |g 27(1992), 17 vom: Sept., Seite 4619-4624 |w (DE-627)129546372 |w (DE-600)218324-9 |w (DE-576)014996774 |x 0022-2461 |7 nnns |
| 773 | 1 | 8 | |g volume:27 |g year:1992 |g number:17 |g month:09 |g pages:4619-4624 |
| 856 | 4 | 1 | |u https://doi.org/10.1007/BF01165996 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a GBV_ILN_11 | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_4082 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4316 | ||
| 912 | |a GBV_ILN_4319 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4700 | ||
| 951 | |a AR | ||
| 952 | |d 27 |j 1992 |e 17 |c 09 |h 4619-4624 | ||
| author_variant |
o s os |
|---|---|
| matchkey_str |
article:00222461:1992----::hteetohmclecinosmcn |
| hierarchy_sort_str |
1992 |
| publishDate |
1992 |
| allfields |
10.1007/BF01165996 doi (DE-627)OLC2046192079 (DE-He213)BF01165996-p DE-627 ger DE-627 rakwb eng 670 VZ Savadogo, O. verfasserin aut Photoelectrochemical reactions on semiconductor materials 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1992 Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. Polymer Experimental Data Electrode Surface Surface State Surface Modification Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 27(1992), 17 vom: Sept., Seite 4619-4624 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:27 year:1992 number:17 month:09 pages:4619-4624 https://doi.org/10.1007/BF01165996 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1992 17 09 4619-4624 |
| spelling |
10.1007/BF01165996 doi (DE-627)OLC2046192079 (DE-He213)BF01165996-p DE-627 ger DE-627 rakwb eng 670 VZ Savadogo, O. verfasserin aut Photoelectrochemical reactions on semiconductor materials 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1992 Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. Polymer Experimental Data Electrode Surface Surface State Surface Modification Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 27(1992), 17 vom: Sept., Seite 4619-4624 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:27 year:1992 number:17 month:09 pages:4619-4624 https://doi.org/10.1007/BF01165996 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1992 17 09 4619-4624 |
| allfields_unstemmed |
10.1007/BF01165996 doi (DE-627)OLC2046192079 (DE-He213)BF01165996-p DE-627 ger DE-627 rakwb eng 670 VZ Savadogo, O. verfasserin aut Photoelectrochemical reactions on semiconductor materials 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1992 Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. Polymer Experimental Data Electrode Surface Surface State Surface Modification Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 27(1992), 17 vom: Sept., Seite 4619-4624 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:27 year:1992 number:17 month:09 pages:4619-4624 https://doi.org/10.1007/BF01165996 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1992 17 09 4619-4624 |
| allfieldsGer |
10.1007/BF01165996 doi (DE-627)OLC2046192079 (DE-He213)BF01165996-p DE-627 ger DE-627 rakwb eng 670 VZ Savadogo, O. verfasserin aut Photoelectrochemical reactions on semiconductor materials 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1992 Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. Polymer Experimental Data Electrode Surface Surface State Surface Modification Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 27(1992), 17 vom: Sept., Seite 4619-4624 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:27 year:1992 number:17 month:09 pages:4619-4624 https://doi.org/10.1007/BF01165996 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1992 17 09 4619-4624 |
| allfieldsSound |
10.1007/BF01165996 doi (DE-627)OLC2046192079 (DE-He213)BF01165996-p DE-627 ger DE-627 rakwb eng 670 VZ Savadogo, O. verfasserin aut Photoelectrochemical reactions on semiconductor materials 1992 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1992 Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. Polymer Experimental Data Electrode Surface Surface State Surface Modification Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 27(1992), 17 vom: Sept., Seite 4619-4624 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:27 year:1992 number:17 month:09 pages:4619-4624 https://doi.org/10.1007/BF01165996 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 27 1992 17 09 4619-4624 |
| language |
English |
| source |
Enthalten in Journal of materials science 27(1992), 17 vom: Sept., Seite 4619-4624 volume:27 year:1992 number:17 month:09 pages:4619-4624 |
| sourceStr |
Enthalten in Journal of materials science 27(1992), 17 vom: Sept., Seite 4619-4624 volume:27 year:1992 number:17 month:09 pages:4619-4624 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Polymer Experimental Data Electrode Surface Surface State Surface Modification |
| dewey-raw |
670 |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science |
| authorswithroles_txt_mv |
Savadogo, O. @@aut@@ |
| publishDateDaySort_date |
1992-09-01T00:00:00Z |
| hierarchy_top_id |
129546372 |
| dewey-sort |
3670 |
| id |
OLC2046192079 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2046192079</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503122230.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1992 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF01165996</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2046192079</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF01165996-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Savadogo, O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Photoelectrochemical reactions on semiconductor materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Chapman & Hall 1992</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Polymer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Experimental Data</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrode Surface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface State</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface Modification</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Kluwer Academic Publishers, 1966</subfield><subfield code="g">27(1992), 17 vom: Sept., Seite 4619-4624</subfield><subfield code="w">(DE-627)129546372</subfield><subfield code="w">(DE-600)218324-9</subfield><subfield code="w">(DE-576)014996774</subfield><subfield code="x">0022-2461</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:27</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:17</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:4619-4624</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF01165996</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">27</subfield><subfield code="j">1992</subfield><subfield code="e">17</subfield><subfield code="c">09</subfield><subfield code="h">4619-4624</subfield></datafield></record></collection>
|
| author |
Savadogo, O. |
| spellingShingle |
Savadogo, O. ddc 670 misc Polymer misc Experimental Data misc Electrode Surface misc Surface State misc Surface Modification Photoelectrochemical reactions on semiconductor materials |
| authorStr |
Savadogo, O. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129546372 |
| format |
Article |
| dewey-ones |
670 - Manufacturing |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0022-2461 |
| topic_title |
670 VZ Photoelectrochemical reactions on semiconductor materials Polymer Experimental Data Electrode Surface Surface State Surface Modification |
| topic |
ddc 670 misc Polymer misc Experimental Data misc Electrode Surface misc Surface State misc Surface Modification |
| topic_unstemmed |
ddc 670 misc Polymer misc Experimental Data misc Electrode Surface misc Surface State misc Surface Modification |
| topic_browse |
ddc 670 misc Polymer misc Experimental Data misc Electrode Surface misc Surface State misc Surface Modification |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of materials science |
| hierarchy_parent_id |
129546372 |
| dewey-tens |
670 - Manufacturing |
| hierarchy_top_title |
Journal of materials science |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 |
| title |
Photoelectrochemical reactions on semiconductor materials |
| ctrlnum |
(DE-627)OLC2046192079 (DE-He213)BF01165996-p |
| title_full |
Photoelectrochemical reactions on semiconductor materials |
| author_sort |
Savadogo, O. |
| journal |
Journal of materials science |
| journalStr |
Journal of materials science |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
1992 |
| contenttype_str_mv |
txt |
| container_start_page |
4619 |
| author_browse |
Savadogo, O. |
| container_volume |
27 |
| class |
670 VZ |
| format_se |
Aufsätze |
| author-letter |
Savadogo, O. |
| doi_str_mv |
10.1007/BF01165996 |
| dewey-full |
670 |
| title_sort |
photoelectrochemical reactions on semiconductor materials |
| title_auth |
Photoelectrochemical reactions on semiconductor materials |
| abstract |
Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. © Chapman & Hall 1992 |
| abstractGer |
Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. © Chapman & Hall 1992 |
| abstract_unstemmed |
Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation. © Chapman & Hall 1992 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 |
| container_issue |
17 |
| title_short |
Photoelectrochemical reactions on semiconductor materials |
| url |
https://doi.org/10.1007/BF01165996 |
| remote_bool |
false |
| ppnlink |
129546372 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1007/BF01165996 |
| up_date |
2024-07-04T04:28:18.179Z |
| _version_ |
1803621287252197376 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2046192079</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230503122230.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1992 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF01165996</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2046192079</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF01165996-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Savadogo, O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Photoelectrochemical reactions on semiconductor materials</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1992</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Chapman & Hall 1992</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The cathodic reduction of $ Fe^{3+} $ ions and $ I_{2} $ on ann-GaAs electrode was studied. The variation in the current density with the concentration of the oxidant has been interpreted as being the result of a reduction mechanism involving interface or surface states, an interpretation that is amply substantiated by experimental data. The effect of the surface modification with $ SiW_{12} $$ O_{40} $4− on the reduction process was studied. Prior to this electrode activation, the rate constant for electrons being transferred from the conduction-band to the interface or surface states,kS, was observed to be independent of electrode potential, whereas in the case of the modifiedn-GaAs,kS depends on band-bending. On the other hand, the rate constant for electrons being transferred from the interface or surface states to oxidant species,kox, does depend on electrode potential in the case of the unmodifiedn-GaAs, and is independent of band-bending in the case of the modifiedn-GaAs. This change may be attributed to the filling of the active surface or interface states or their redistribution after the electrode surface activation.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Polymer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Experimental Data</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrode Surface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface State</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surface Modification</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Kluwer Academic Publishers, 1966</subfield><subfield code="g">27(1992), 17 vom: Sept., Seite 4619-4624</subfield><subfield code="w">(DE-627)129546372</subfield><subfield code="w">(DE-600)218324-9</subfield><subfield code="w">(DE-576)014996774</subfield><subfield code="x">0022-2461</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:27</subfield><subfield code="g">year:1992</subfield><subfield code="g">number:17</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:4619-4624</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF01165996</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4082</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4316</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">27</subfield><subfield code="j">1992</subfield><subfield code="e">17</subfield><subfield code="c">09</subfield><subfield code="h">4619-4624</subfield></datafield></record></collection>
|
| score |
7.400652 |