Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system
Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the...
Ausführliche Beschreibung
Autor*in: |
Kim, Seung Hyun [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
1995 |
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Schlagwörter: |
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Anmerkung: |
© Chapman & Hall 1995 |
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Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers-Plenum Publishers, 1966, 30(1995), 22 vom: Nov., Seite 5639-5643 |
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Übergeordnetes Werk: |
volume:30 ; year:1995 ; number:22 ; month:11 ; pages:5639-5643 |
Links: |
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DOI / URN: |
10.1007/BF00356697 |
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Katalog-ID: |
OLC2046222644 |
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10.1007/BF00356697 doi (DE-627)OLC2046222644 (DE-He213)BF00356697-p DE-627 ger DE-627 rakwb eng 670 VZ Kim, Seung Hyun verfasserin aut Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1995 Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate Kim, Chang Eun aut Oh, Young Jei aut Enthalten in Journal of materials science Kluwer Academic Publishers-Plenum Publishers, 1966 30(1995), 22 vom: Nov., Seite 5639-5643 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:30 year:1995 number:22 month:11 pages:5639-5643 https://doi.org/10.1007/BF00356697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1995 22 11 5639-5643 |
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10.1007/BF00356697 doi (DE-627)OLC2046222644 (DE-He213)BF00356697-p DE-627 ger DE-627 rakwb eng 670 VZ Kim, Seung Hyun verfasserin aut Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1995 Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate Kim, Chang Eun aut Oh, Young Jei aut Enthalten in Journal of materials science Kluwer Academic Publishers-Plenum Publishers, 1966 30(1995), 22 vom: Nov., Seite 5639-5643 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:30 year:1995 number:22 month:11 pages:5639-5643 https://doi.org/10.1007/BF00356697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1995 22 11 5639-5643 |
allfields_unstemmed |
10.1007/BF00356697 doi (DE-627)OLC2046222644 (DE-He213)BF00356697-p DE-627 ger DE-627 rakwb eng 670 VZ Kim, Seung Hyun verfasserin aut Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1995 Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate Kim, Chang Eun aut Oh, Young Jei aut Enthalten in Journal of materials science Kluwer Academic Publishers-Plenum Publishers, 1966 30(1995), 22 vom: Nov., Seite 5639-5643 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:30 year:1995 number:22 month:11 pages:5639-5643 https://doi.org/10.1007/BF00356697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1995 22 11 5639-5643 |
allfieldsGer |
10.1007/BF00356697 doi (DE-627)OLC2046222644 (DE-He213)BF00356697-p DE-627 ger DE-627 rakwb eng 670 VZ Kim, Seung Hyun verfasserin aut Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1995 Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate Kim, Chang Eun aut Oh, Young Jei aut Enthalten in Journal of materials science Kluwer Academic Publishers-Plenum Publishers, 1966 30(1995), 22 vom: Nov., Seite 5639-5643 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:30 year:1995 number:22 month:11 pages:5639-5643 https://doi.org/10.1007/BF00356697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1995 22 11 5639-5643 |
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10.1007/BF00356697 doi (DE-627)OLC2046222644 (DE-He213)BF00356697-p DE-627 ger DE-627 rakwb eng 670 VZ Kim, Seung Hyun verfasserin aut Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system 1995 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Chapman & Hall 1995 Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate Kim, Chang Eun aut Oh, Young Jei aut Enthalten in Journal of materials science Kluwer Academic Publishers-Plenum Publishers, 1966 30(1995), 22 vom: Nov., Seite 5639-5643 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:30 year:1995 number:22 month:11 pages:5639-5643 https://doi.org/10.1007/BF00356697 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_24 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4082 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 30 1995 22 11 5639-5643 |
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author |
Kim, Seung Hyun |
spellingShingle |
Kim, Seung Hyun ddc 670 misc Perovskite misc Silicon Wafer misc Triethanolamine misc Isopropoxide misc Trihydrate Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
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670 VZ Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system Perovskite Silicon Wafer Triethanolamine Isopropoxide Trihydrate |
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ddc 670 misc Perovskite misc Silicon Wafer misc Triethanolamine misc Isopropoxide misc Trihydrate |
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ddc 670 misc Perovskite misc Silicon Wafer misc Triethanolamine misc Isopropoxide misc Trihydrate |
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ddc 670 misc Perovskite misc Silicon Wafer misc Triethanolamine misc Isopropoxide misc Trihydrate |
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Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
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title_full |
Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
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Kim, Seung Hyun |
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Journal of materials science |
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1995 |
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Kim, Seung Hyun Kim, Chang Eun Oh, Young Jei |
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Kim, Seung Hyun |
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10.1007/BF00356697 |
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670 |
title_sort |
preparation of $ pbtio_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
title_auth |
Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
abstract |
Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. © Chapman & Hall 1995 |
abstractGer |
Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. © Chapman & Hall 1995 |
abstract_unstemmed |
Abstract The stable range of $ PbTiO_{3} $ sol and the processing conditions of uniform thin films were investigated using a solution of titanium isopropoxide, three kinds of alkanolamines (monoethanolamine, diethanolamine, triethanolamine), lead acetate trihydrate and isopropanol. Depending on the sol state with various alkanolamine/alkoxide molar ratios, diethanolamine (DEA) was very effective in preparing uniform and dense oxide films through room-temperature reaction, owing to its superior stability during the hydrolysis and condensation reaction. Perovskite $ PbTiO_{3} $ thin films were obtained on oxidized silicon wafer above 550 °C and completely pure films were obtained at 650 °C using DEA as a complexing agent. The dielectric constant and loss tangent of these thin films fired at 650 °C for 30 min were found to be ∼240 and ∼0.01 at 1 kHz, respectively. © Chapman & Hall 1995 |
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title_short |
Preparation of $ PbTiO_{3} $ thin films using an alkoxide-alkanolamine sol-gel system |
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