Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response
Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area forme...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kishimoto, A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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| Schlagwörter: |
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| Anmerkung: |
© Kluwer Academic Publishers 1999 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 34(1999), 17 vom: Sept., Seite 4233-4237 |
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| Übergeordnetes Werk: |
volume:34 ; year:1999 ; number:17 ; month:09 ; pages:4233-4237 |
| Links: |
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| DOI / URN: |
10.1023/A:1004698618485 |
|---|
| Katalog-ID: |
OLC2046253647 |
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| 520 | |a Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. | ||
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| 650 | 4 | |a Initial Crack | |
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| 700 | 1 | |a Nakamura, Y. |4 aut | |
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10.1023/A:1004698618485 doi (DE-627)OLC2046253647 (DE-He213)A:1004698618485-p DE-627 ger DE-627 rakwb eng 670 VZ Kishimoto, A. verfasserin aut Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 1999 Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. Voltage Application Stress Application Constant Voltage Current Increase Initial Crack Nakamichi, A. aut Nakamura, Y. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 34(1999), 17 vom: Sept., Seite 4233-4237 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:34 year:1999 number:17 month:09 pages:4233-4237 https://doi.org/10.1023/A:1004698618485 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 34 1999 17 09 4233-4237 |
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10.1023/A:1004698618485 doi (DE-627)OLC2046253647 (DE-He213)A:1004698618485-p DE-627 ger DE-627 rakwb eng 670 VZ Kishimoto, A. verfasserin aut Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 1999 Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. Voltage Application Stress Application Constant Voltage Current Increase Initial Crack Nakamichi, A. aut Nakamura, Y. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 34(1999), 17 vom: Sept., Seite 4233-4237 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:34 year:1999 number:17 month:09 pages:4233-4237 https://doi.org/10.1023/A:1004698618485 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 34 1999 17 09 4233-4237 |
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10.1023/A:1004698618485 doi (DE-627)OLC2046253647 (DE-He213)A:1004698618485-p DE-627 ger DE-627 rakwb eng 670 VZ Kishimoto, A. verfasserin aut Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 1999 Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. Voltage Application Stress Application Constant Voltage Current Increase Initial Crack Nakamichi, A. aut Nakamura, Y. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 34(1999), 17 vom: Sept., Seite 4233-4237 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:34 year:1999 number:17 month:09 pages:4233-4237 https://doi.org/10.1023/A:1004698618485 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 34 1999 17 09 4233-4237 |
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10.1023/A:1004698618485 doi (DE-627)OLC2046253647 (DE-He213)A:1004698618485-p DE-627 ger DE-627 rakwb eng 670 VZ Kishimoto, A. verfasserin aut Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 1999 Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. Voltage Application Stress Application Constant Voltage Current Increase Initial Crack Nakamichi, A. aut Nakamura, Y. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 34(1999), 17 vom: Sept., Seite 4233-4237 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:34 year:1999 number:17 month:09 pages:4233-4237 https://doi.org/10.1023/A:1004698618485 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 34 1999 17 09 4233-4237 |
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10.1023/A:1004698618485 doi (DE-627)OLC2046253647 (DE-He213)A:1004698618485-p DE-627 ger DE-627 rakwb eng 670 VZ Kishimoto, A. verfasserin aut Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 1999 Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. Voltage Application Stress Application Constant Voltage Current Increase Initial Crack Nakamichi, A. aut Nakamura, Y. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 34(1999), 17 vom: Sept., Seite 4233-4237 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:34 year:1999 number:17 month:09 pages:4233-4237 https://doi.org/10.1023/A:1004698618485 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 AR 34 1999 17 09 4233-4237 |
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Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response |
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Kishimoto, A. |
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Journal of materials science |
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Journal of materials science |
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eng |
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1999 |
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Kishimoto, A. Nakamichi, A. Nakamura, Y. |
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Kishimoto, A. |
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10.1023/A:1004698618485 |
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670 |
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monitoring of indentation fracture and bending strain in α-sic ceramics utilizing electrical response |
| title_auth |
Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response |
| abstract |
Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. © Kluwer Academic Publishers 1999 |
| abstractGer |
Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. © Kluwer Academic Publishers 1999 |
| abstract_unstemmed |
Abstract Propagation of indentation fracture was firstly monitored on α-SiC ceramics through a current drop accompanied by the decrease in current conduction area. The current decrease ratio before and after indentation during the constant voltage application was proportional to the crack area formed. However, during the indentation, the current anomalously increased even though the indentation crack propagated. This phenomena is probably due to the piezoresistance effect which has already reported in SiC single crystal. When bending stress was applied to α-SiC ceramics, the current increase ratio was proportional to the bending strain. A fracture foreseeing system is proposed for α-SiC ceramics in which initial crack monitoring without stress application and bending strain monitoring utilizing the piezoresistance effect are combined. © Kluwer Academic Publishers 1999 |
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Monitoring of indentation fracture and bending strain in α-SiC ceramics utilizing electrical response |
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