Self-reinforced silicon nitride of controlled microstructural orientation
Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the l...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Park, Dong-Soo [verfasserIn] |
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| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2001 |
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| Schlagwörter: |
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| Anmerkung: |
© Kluwer Academic Publishers 2001 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 36(2001), 3 vom: Feb., Seite 785-789 |
|---|---|
| Übergeordnetes Werk: |
volume:36 ; year:2001 ; number:3 ; month:02 ; pages:785-789 |
| Links: |
|---|
| DOI / URN: |
10.1023/A:1004817831191 |
|---|
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OLC2046264894 |
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| 520 | |a Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. | ||
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10.1023/A:1004817831191 doi (DE-627)OLC2046264894 (DE-He213)A:1004817831191-p DE-627 ger DE-627 rakwb eng 670 VZ Park, Dong-Soo verfasserin aut Self-reinforced silicon nitride of controlled microstructural orientation 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2001 Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. Polymer Silicon Anisotropy Nitride Silicon Nitride Kim, Chang-Won aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 36(2001), 3 vom: Feb., Seite 785-789 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:36 year:2001 number:3 month:02 pages:785-789 https://doi.org/10.1023/A:1004817831191 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 AR 36 2001 3 02 785-789 |
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10.1023/A:1004817831191 doi (DE-627)OLC2046264894 (DE-He213)A:1004817831191-p DE-627 ger DE-627 rakwb eng 670 VZ Park, Dong-Soo verfasserin aut Self-reinforced silicon nitride of controlled microstructural orientation 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2001 Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. Polymer Silicon Anisotropy Nitride Silicon Nitride Kim, Chang-Won aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 36(2001), 3 vom: Feb., Seite 785-789 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:36 year:2001 number:3 month:02 pages:785-789 https://doi.org/10.1023/A:1004817831191 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 AR 36 2001 3 02 785-789 |
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10.1023/A:1004817831191 doi (DE-627)OLC2046264894 (DE-He213)A:1004817831191-p DE-627 ger DE-627 rakwb eng 670 VZ Park, Dong-Soo verfasserin aut Self-reinforced silicon nitride of controlled microstructural orientation 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2001 Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. Polymer Silicon Anisotropy Nitride Silicon Nitride Kim, Chang-Won aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 36(2001), 3 vom: Feb., Seite 785-789 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:36 year:2001 number:3 month:02 pages:785-789 https://doi.org/10.1023/A:1004817831191 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 AR 36 2001 3 02 785-789 |
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10.1023/A:1004817831191 doi (DE-627)OLC2046264894 (DE-He213)A:1004817831191-p DE-627 ger DE-627 rakwb eng 670 VZ Park, Dong-Soo verfasserin aut Self-reinforced silicon nitride of controlled microstructural orientation 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2001 Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. Polymer Silicon Anisotropy Nitride Silicon Nitride Kim, Chang-Won aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 36(2001), 3 vom: Feb., Seite 785-789 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:36 year:2001 number:3 month:02 pages:785-789 https://doi.org/10.1023/A:1004817831191 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 AR 36 2001 3 02 785-789 |
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10.1023/A:1004817831191 doi (DE-627)OLC2046264894 (DE-He213)A:1004817831191-p DE-627 ger DE-627 rakwb eng 670 VZ Park, Dong-Soo verfasserin aut Self-reinforced silicon nitride of controlled microstructural orientation 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Kluwer Academic Publishers 2001 Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. Polymer Silicon Anisotropy Nitride Silicon Nitride Kim, Chang-Won aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 36(2001), 3 vom: Feb., Seite 785-789 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:36 year:2001 number:3 month:02 pages:785-789 https://doi.org/10.1023/A:1004817831191 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_20 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4316 GBV_ILN_4319 GBV_ILN_4323 AR 36 2001 3 02 785-789 |
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Self-reinforced silicon nitride of controlled microstructural orientation |
| abstract |
Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. © Kluwer Academic Publishers 2001 |
| abstractGer |
Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. © Kluwer Academic Publishers 2001 |
| abstract_unstemmed |
Abstract Silicon nitride ceramics with 0–5 wt % silicon nitride whiskers were prepared by tape casting and gas pressure sintering at 2148 K for 4 hours. The whiskers worked as seed crystals and grew into the large elongated grains. The whiskers were aligned during tape casting. Orientations of the large elongated grains in sintered samples were controlled by stacking sequence of sheets cut from the tape. Samples of each composition had three structures; unidirectional, cross-plied, and 45° rotated. Samples with the uni-directionally oriented grains exhibited anisotropy that became stronger as the whisker content increased, while samples of the other two structures did not show the anisotropy. © Kluwer Academic Publishers 2001 |
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3 |
| title_short |
Self-reinforced silicon nitride of controlled microstructural orientation |
| url |
https://doi.org/10.1023/A:1004817831191 |
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| author2 |
Kim, Chang-Won |
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| doi_str |
10.1023/A:1004817831191 |
| up_date |
2024-07-04T04:39:09.258Z |
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