Wetting and infiltration of carbon by liquid silicon
Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Dezellus, O. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2005 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science + Business Media, Inc. 2005 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Kluwer Academic Publishers, 1966, 40(2005), 9-10 vom: Mai, Seite 2307-2311 |
|---|---|
| Übergeordnetes Werk: |
volume:40 ; year:2005 ; number:9-10 ; month:05 ; pages:2307-2311 |
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| DOI / URN: |
10.1007/s10853-005-1950-7 |
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| 520 | |a Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. | ||
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10.1007/s10853-005-1950-7 doi (DE-627)OLC2046302095 (DE-He213)s10853-005-1950-7-p DE-627 ger DE-627 rakwb eng 670 VZ Dezellus, O. verfasserin aut Wetting and infiltration of carbon by liquid silicon 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science + Business Media, Inc. 2005 Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. Contact Angle Spreading Rate Triple Line Liquid Silicon Equilibrium Contact Angle Jacques, S. aut Hodaj, F. aut Eustathopoulos, N. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 40(2005), 9-10 vom: Mai, Seite 2307-2311 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:40 year:2005 number:9-10 month:05 pages:2307-2311 https://doi.org/10.1007/s10853-005-1950-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4319 GBV_ILN_4323 AR 40 2005 9-10 05 2307-2311 |
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10.1007/s10853-005-1950-7 doi (DE-627)OLC2046302095 (DE-He213)s10853-005-1950-7-p DE-627 ger DE-627 rakwb eng 670 VZ Dezellus, O. verfasserin aut Wetting and infiltration of carbon by liquid silicon 2005 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science + Business Media, Inc. 2005 Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. Contact Angle Spreading Rate Triple Line Liquid Silicon Equilibrium Contact Angle Jacques, S. aut Hodaj, F. aut Eustathopoulos, N. aut Enthalten in Journal of materials science Kluwer Academic Publishers, 1966 40(2005), 9-10 vom: Mai, Seite 2307-2311 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:40 year:2005 number:9-10 month:05 pages:2307-2311 https://doi.org/10.1007/s10853-005-1950-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_21 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_100 GBV_ILN_602 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4319 GBV_ILN_4323 AR 40 2005 9-10 05 2307-2311 |
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Wetting and infiltration of carbon by liquid silicon |
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Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. © Springer Science + Business Media, Inc. 2005 |
| abstractGer |
Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. © Springer Science + Business Media, Inc. 2005 |
| abstract_unstemmed |
Abstract The wettability of carbon materials by molten silicon was investigated at $ 1430^{∘} $C under vacuum by using the dispensed drop variant of the sessile drop technique. The results are compared with data in the literature and used to contribute to a comprehensive understanding of wetting in the liquid-Si/solid-C system. Consequences on the dynamics of Liquid Silicon Infiltration (LSI) processes are discussed. © Springer Science + Business Media, Inc. 2005 |
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9-10 |
| title_short |
Wetting and infiltration of carbon by liquid silicon |
| url |
https://doi.org/10.1007/s10853-005-1950-7 |
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| author2 |
Jacques, S. Hodaj, F. Eustathopoulos, N. |
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Jacques, S. Hodaj, F. Eustathopoulos, N. |
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| doi_str |
10.1007/s10853-005-1950-7 |
| up_date |
2024-07-04T04:44:28.277Z |
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