Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering

Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Choi, Jun Oh [verfasserIn] Lee, Hwa Soo Ko, Kyung Hyun

Format:	Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film

Anmerkung:	© Springer Science+Business Media New York 2014

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Springer US, 1966, 49(2014), 14 vom: 11. Apr., Seite 5087-5092
Übergeordnetes Werk:	volume:49 ; year:2014 ; number:14 ; day:11 ; month:04 ; pages:5087-5092

Links:	Volltext

DOI / URN:	10.1007/s10853-014-8216-1

Katalog-ID:	OLC204639626X

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520			\|a Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened.
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allfields	10.1007/s10853-014-8216-1 doi (DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p DE-627 ger DE-627 rakwb eng 670 VZ Choi, Jun Oh verfasserin aut Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film Lee, Hwa Soo aut Ko, Kyung Hyun aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 14 vom: 11. Apr., Seite 5087-5092 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:14 day:11 month:04 pages:5087-5092 https://doi.org/10.1007/s10853-014-8216-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 14 11 04 5087-5092
spelling	10.1007/s10853-014-8216-1 doi (DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p DE-627 ger DE-627 rakwb eng 670 VZ Choi, Jun Oh verfasserin aut Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film Lee, Hwa Soo aut Ko, Kyung Hyun aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 14 vom: 11. Apr., Seite 5087-5092 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:14 day:11 month:04 pages:5087-5092 https://doi.org/10.1007/s10853-014-8216-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 14 11 04 5087-5092
allfields_unstemmed	10.1007/s10853-014-8216-1 doi (DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p DE-627 ger DE-627 rakwb eng 670 VZ Choi, Jun Oh verfasserin aut Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film Lee, Hwa Soo aut Ko, Kyung Hyun aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 14 vom: 11. Apr., Seite 5087-5092 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:14 day:11 month:04 pages:5087-5092 https://doi.org/10.1007/s10853-014-8216-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 14 11 04 5087-5092
allfieldsGer	10.1007/s10853-014-8216-1 doi (DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p DE-627 ger DE-627 rakwb eng 670 VZ Choi, Jun Oh verfasserin aut Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film Lee, Hwa Soo aut Ko, Kyung Hyun aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 14 vom: 11. Apr., Seite 5087-5092 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:14 day:11 month:04 pages:5087-5092 https://doi.org/10.1007/s10853-014-8216-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 14 11 04 5087-5092
allfieldsSound	10.1007/s10853-014-8216-1 doi (DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p DE-627 ger DE-627 rakwb eng 670 VZ Choi, Jun Oh verfasserin aut Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film Lee, Hwa Soo aut Ko, Kyung Hyun aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 14 vom: 11. Apr., Seite 5087-5092 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:14 day:11 month:04 pages:5087-5092 https://doi.org/10.1007/s10853-014-8216-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 14 11 04 5087-5092
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topic_title	670 VZ Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering TiO2 V2O5 Vanadium Oxide Vanadium Dioxide Vanadium Oxide Thin Film
topic	ddc 670 misc TiO2 misc V2O5 misc Vanadium Oxide misc Vanadium Dioxide misc Vanadium Oxide Thin Film
topic_unstemmed	ddc 670 misc TiO2 misc V2O5 misc Vanadium Oxide misc Vanadium Dioxide misc Vanadium Oxide Thin Film
topic_browse	ddc 670 misc TiO2 misc V2O5 misc Vanadium Oxide misc Vanadium Dioxide misc Vanadium Oxide Thin Film
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title	Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering
ctrlnum	(DE-627)OLC204639626X (DE-He213)s10853-014-8216-1-p
title_full	Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering
author_sort	Choi, Jun Oh
journal	Journal of materials science
journalStr	Journal of materials science
lang_code	eng
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container_start_page	5087
author_browse	Choi, Jun Oh Lee, Hwa Soo Ko, Kyung Hyun
container_volume	49
class	670 VZ
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author-letter	Choi, Jun Oh
doi_str_mv	10.1007/s10853-014-8216-1
dewey-full	670
title_sort	oxidation potential control of $ vo_{2} $ thin films by metal oxide co-sputtering
title_auth	Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering
abstract	Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. © Springer Science+Business Media New York 2014
abstractGer	Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. © Springer Science+Business Media New York 2014
abstract_unstemmed	Abstract For metal-to-insulator transition (MIT) in vanadium oxide thin film, a thermodynamically stable vanadium dioxide ($ VO_{2} $) phase is essential. In $ VO_{2} $ films sputter-deposited on a quartz substrate from a $ V_{2} $$ O_{5} $ target, a radio-frequency (RF) magnetron sputter system at working pressure of 7 mTorr is used. Due to the lower sputtering yield of oxygen compared to vanadium leading to oxygen-ion deficiency, the reduction of V ions is resulted to compensate charge with the oxygen ions. Under lower working pressures, the deposition rate increases, but a simultaneous oxygen-ion deficiency causes the destabilization of $ VO_{2} $. To prevent this, titanium oxide co-deposition is suggested to enrich the oxygen source. When $ TiO_{2} $ is used, it is found that the Ti ion has a stable +4 charge state so that the use of extra oxygen in sputtering prevents the destabilization of $ VO_{2} $. However, this is not the case for TiO. For the latter, Ti ions are oxidized from the +2 state to the +3 and +4 states, and V ions with less oxidation potential are reduced to +3 or so. Pure $ VO_{2} $ thin film exhibits MIT at 66 °C and a large resistivity ratio of four orders of magnitude from 30 to 90 °C. The ($ V_{2} $$ O_{5} $ + $ TiO_{2} $) system under working pressure as low as 5 mTorr yields fairly good films comparable to pure $ VO_{2} $ deposited at 7 mTorr, whereas the use of TiO yields films with MIT absent or considerably weakened. © Springer Science+Business Media New York 2014
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container_issue	14
title_short	Oxidation potential control of $ VO_{2} $ thin films by metal oxide co-sputtering
url	https://doi.org/10.1007/s10853-014-8216-1
remote_bool	false
author2	Lee, Hwa Soo Ko, Kyung Hyun
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doi_str	10.1007/s10853-014-8216-1
up_date	2024-07-04T04:59:05.400Z
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