Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit
Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution th...
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Gespeichert in:
| Autor*in: |
Shahi, Prashant [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Springer US, 1966, 49(2014), 20 vom: 19. Juli, Seite 7317-7324 |
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| Übergeordnetes Werk: |
volume:49 ; year:2014 ; number:20 ; day:19 ; month:07 ; pages:7317-7324 |
| Links: |
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| DOI / URN: |
10.1007/s10853-014-8444-4 |
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| Katalog-ID: |
OLC2046398181 |
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| 520 | |a Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. | ||
| 650 | 4 | |a Mott Insulator | |
| 650 | 4 | |a Zero Field Cool | |
| 650 | 4 | |a Orbital Degeneracy | |
| 650 | 4 | |a Homopolar Bonding | |
| 650 | 4 | |a Polaronic Hole | |
| 700 | 1 | |a Kumar, Saurabh |4 aut | |
| 700 | 1 | |a Sharma, Neetika |4 aut | |
| 700 | 1 | |a Singh, Ripandeep |4 aut | |
| 700 | 1 | |a Sastry, P. U. |4 aut | |
| 700 | 1 | |a Das, A. |4 aut | |
| 700 | 1 | |a Kumar, A. |4 aut | |
| 700 | 1 | |a Shukla, K. K. |4 aut | |
| 700 | 1 | |a Ghosh, A. K. |4 aut | |
| 700 | 1 | |a Nigam, A. K. |4 aut | |
| 700 | 1 | |a Chatterjee, Sandip |4 aut | |
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10.1007/s10853-014-8444-4 doi (DE-627)OLC2046398181 (DE-He213)s10853-014-8444-4-p DE-627 ger DE-627 rakwb eng 670 VZ Shahi, Prashant verfasserin aut Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. Mott Insulator Zero Field Cool Orbital Degeneracy Homopolar Bonding Polaronic Hole Kumar, Saurabh aut Sharma, Neetika aut Singh, Ripandeep aut Sastry, P. U. aut Das, A. aut Kumar, A. aut Shukla, K. K. aut Ghosh, A. K. aut Nigam, A. K. aut Chatterjee, Sandip aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 20 vom: 19. Juli, Seite 7317-7324 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:20 day:19 month:07 pages:7317-7324 https://doi.org/10.1007/s10853-014-8444-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 20 19 07 7317-7324 |
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10.1007/s10853-014-8444-4 doi (DE-627)OLC2046398181 (DE-He213)s10853-014-8444-4-p DE-627 ger DE-627 rakwb eng 670 VZ Shahi, Prashant verfasserin aut Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. Mott Insulator Zero Field Cool Orbital Degeneracy Homopolar Bonding Polaronic Hole Kumar, Saurabh aut Sharma, Neetika aut Singh, Ripandeep aut Sastry, P. U. aut Das, A. aut Kumar, A. aut Shukla, K. K. aut Ghosh, A. K. aut Nigam, A. K. aut Chatterjee, Sandip aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 20 vom: 19. Juli, Seite 7317-7324 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:20 day:19 month:07 pages:7317-7324 https://doi.org/10.1007/s10853-014-8444-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 20 19 07 7317-7324 |
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10.1007/s10853-014-8444-4 doi (DE-627)OLC2046398181 (DE-He213)s10853-014-8444-4-p DE-627 ger DE-627 rakwb eng 670 VZ Shahi, Prashant verfasserin aut Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. Mott Insulator Zero Field Cool Orbital Degeneracy Homopolar Bonding Polaronic Hole Kumar, Saurabh aut Sharma, Neetika aut Singh, Ripandeep aut Sastry, P. U. aut Das, A. aut Kumar, A. aut Shukla, K. K. aut Ghosh, A. K. aut Nigam, A. K. aut Chatterjee, Sandip aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 20 vom: 19. Juli, Seite 7317-7324 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:20 day:19 month:07 pages:7317-7324 https://doi.org/10.1007/s10853-014-8444-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 20 19 07 7317-7324 |
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10.1007/s10853-014-8444-4 doi (DE-627)OLC2046398181 (DE-He213)s10853-014-8444-4-p DE-627 ger DE-627 rakwb eng 670 VZ Shahi, Prashant verfasserin aut Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. Mott Insulator Zero Field Cool Orbital Degeneracy Homopolar Bonding Polaronic Hole Kumar, Saurabh aut Sharma, Neetika aut Singh, Ripandeep aut Sastry, P. U. aut Das, A. aut Kumar, A. aut Shukla, K. K. aut Ghosh, A. K. aut Nigam, A. K. aut Chatterjee, Sandip aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 20 vom: 19. Juli, Seite 7317-7324 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:20 day:19 month:07 pages:7317-7324 https://doi.org/10.1007/s10853-014-8444-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 20 19 07 7317-7324 |
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10.1007/s10853-014-8444-4 doi (DE-627)OLC2046398181 (DE-He213)s10853-014-8444-4-p DE-627 ger DE-627 rakwb eng 670 VZ Shahi, Prashant verfasserin aut Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2014 Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. Mott Insulator Zero Field Cool Orbital Degeneracy Homopolar Bonding Polaronic Hole Kumar, Saurabh aut Sharma, Neetika aut Singh, Ripandeep aut Sastry, P. U. aut Das, A. aut Kumar, A. aut Shukla, K. K. aut Ghosh, A. K. aut Nigam, A. K. aut Chatterjee, Sandip aut Enthalten in Journal of materials science Springer US, 1966 49(2014), 20 vom: 19. Juli, Seite 7317-7324 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:49 year:2014 number:20 day:19 month:07 pages:7317-7324 https://doi.org/10.1007/s10853-014-8444-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_32 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 49 2014 20 19 07 7317-7324 |
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Shahi, Prashant @@aut@@ Kumar, Saurabh @@aut@@ Sharma, Neetika @@aut@@ Singh, Ripandeep @@aut@@ Sastry, P. U. @@aut@@ Das, A. @@aut@@ Kumar, A. @@aut@@ Shukla, K. K. @@aut@@ Ghosh, A. K. @@aut@@ Nigam, A. K. @@aut@@ Chatterjee, Sandip @@aut@@ |
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Shahi, Prashant Kumar, Saurabh Sharma, Neetika Singh, Ripandeep Sastry, P. U. Das, A. Kumar, A. Shukla, K. K. Ghosh, A. K. Nigam, A. K. Chatterjee, Sandip |
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transport, magnetic and structural properties of mott insulator $ mnv_{2} $$ o_{4} $ at the boundary between localized and itinerant electron limit |
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Transport, magnetic and structural properties of Mott insulator $ MnV_{2} $$ O_{4} $ at the boundary between localized and itinerant electron limit |
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Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. © Springer Science+Business Media New York 2014 |
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Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. © Springer Science+Business Media New York 2014 |
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Abstract The effect of Zn and Cr doping on the transport and magnetic properties of $ MnV_{2} $$ O_{4} $ have been investigated using resistivity, thermoelectric power (TEP), magnetization, neutron diffraction and X-ray diffraction techniques. It is observed, that with increase in Zn substitution the non-collinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. Investigations also show that with Zn doping both the Curie temperature (TC) and structural transition temperature (TS) decrease, while the gap between them increases rapidly. On the other hand, with Cr doping on the V site the TC remains almost constant but TS decreases rapidly. Moreover, with Zn doping both resistivity and TEP decrease, whereas with 10 % Cr doping the TEP decreases and a change of sign occurs indicating an increase in the band gap. This leads to the decrease of the mobility of the polaronic holes than the mobility of the electronic polarons at low temperature. © Springer Science+Business Media New York 2014 |
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