Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulat...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Simanjuntak, Firman Mangasa [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Springer US, 1966, 50(2015), 21 vom: 14. Juli, Seite 6961-6969 |
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| Übergeordnetes Werk: |
volume:50 ; year:2015 ; number:21 ; day:14 ; month:07 ; pages:6961-6969 |
| Links: |
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| DOI / URN: |
10.1007/s10853-015-9247-y |
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| Katalog-ID: |
OLC2046406389 |
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| 520 | |a Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. | ||
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10.1007/s10853-015-9247-y doi (DE-627)OLC2046406389 (DE-He213)s10853-015-9247-y-p DE-627 ger DE-627 rakwb eng 670 VZ Simanjuntak, Firman Mangasa verfasserin aut Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. Oxygen Vacancy Resistive Switching High Resistance State Resistive Random Access Memory Memory Window Panda, Debashis aut Tsai, Tsung-Ling aut Lin, Chun-An aut Wei, Kung-Hwa aut Tseng, Tseung-Yuen aut Enthalten in Journal of materials science Springer US, 1966 50(2015), 21 vom: 14. Juli, Seite 6961-6969 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:50 year:2015 number:21 day:14 month:07 pages:6961-6969 https://doi.org/10.1007/s10853-015-9247-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 50 2015 21 14 07 6961-6969 |
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10.1007/s10853-015-9247-y doi (DE-627)OLC2046406389 (DE-He213)s10853-015-9247-y-p DE-627 ger DE-627 rakwb eng 670 VZ Simanjuntak, Firman Mangasa verfasserin aut Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. Oxygen Vacancy Resistive Switching High Resistance State Resistive Random Access Memory Memory Window Panda, Debashis aut Tsai, Tsung-Ling aut Lin, Chun-An aut Wei, Kung-Hwa aut Tseng, Tseung-Yuen aut Enthalten in Journal of materials science Springer US, 1966 50(2015), 21 vom: 14. Juli, Seite 6961-6969 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:50 year:2015 number:21 day:14 month:07 pages:6961-6969 https://doi.org/10.1007/s10853-015-9247-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 50 2015 21 14 07 6961-6969 |
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10.1007/s10853-015-9247-y doi (DE-627)OLC2046406389 (DE-He213)s10853-015-9247-y-p DE-627 ger DE-627 rakwb eng 670 VZ Simanjuntak, Firman Mangasa verfasserin aut Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. Oxygen Vacancy Resistive Switching High Resistance State Resistive Random Access Memory Memory Window Panda, Debashis aut Tsai, Tsung-Ling aut Lin, Chun-An aut Wei, Kung-Hwa aut Tseng, Tseung-Yuen aut Enthalten in Journal of materials science Springer US, 1966 50(2015), 21 vom: 14. Juli, Seite 6961-6969 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:50 year:2015 number:21 day:14 month:07 pages:6961-6969 https://doi.org/10.1007/s10853-015-9247-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 50 2015 21 14 07 6961-6969 |
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10.1007/s10853-015-9247-y doi (DE-627)OLC2046406389 (DE-He213)s10853-015-9247-y-p DE-627 ger DE-627 rakwb eng 670 VZ Simanjuntak, Firman Mangasa verfasserin aut Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. Oxygen Vacancy Resistive Switching High Resistance State Resistive Random Access Memory Memory Window Panda, Debashis aut Tsai, Tsung-Ling aut Lin, Chun-An aut Wei, Kung-Hwa aut Tseng, Tseung-Yuen aut Enthalten in Journal of materials science Springer US, 1966 50(2015), 21 vom: 14. Juli, Seite 6961-6969 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:50 year:2015 number:21 day:14 month:07 pages:6961-6969 https://doi.org/10.1007/s10853-015-9247-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 50 2015 21 14 07 6961-6969 |
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10.1007/s10853-015-9247-y doi (DE-627)OLC2046406389 (DE-He213)s10853-015-9247-y-p DE-627 ger DE-627 rakwb eng 670 VZ Simanjuntak, Firman Mangasa verfasserin aut Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. Oxygen Vacancy Resistive Switching High Resistance State Resistive Random Access Memory Memory Window Panda, Debashis aut Tsai, Tsung-Ling aut Lin, Chun-An aut Wei, Kung-Hwa aut Tseng, Tseung-Yuen aut Enthalten in Journal of materials science Springer US, 1966 50(2015), 21 vom: 14. Juli, Seite 6961-6969 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:50 year:2015 number:21 day:14 month:07 pages:6961-6969 https://doi.org/10.1007/s10853-015-9247-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 50 2015 21 14 07 6961-6969 |
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Journal of materials science |
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Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode |
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Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode |
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Simanjuntak, Firman Mangasa |
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Journal of materials science |
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Simanjuntak, Firman Mangasa Panda, Debashis Tsai, Tsung-Ling Lin, Chun-An Wei, Kung-Hwa Tseng, Tseung-Yuen |
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10.1007/s10853-015-9247-y |
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670 |
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enhancing the memory window of azo/zno/ito transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode |
| title_auth |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode |
| abstract |
Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. © Springer Science+Business Media New York 2015 |
| abstractGer |
Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. © Springer Science+Business Media New York 2015 |
| abstract_unstemmed |
Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than $ 10^{4} $ cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration. © Springer Science+Business Media New York 2015 |
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| title_short |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode |
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