Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Abstract The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulat...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Simanjuntak, Firman Mangasa [verfasserIn]

Panda, Debashis

Tsai, Tsung-Ling

Lin, Chun-An

Wei, Kung-Hwa

Tseng, Tseung-Yuen

Format:

Artikel

Sprache:

Englisch

Erschienen:

2015

Schlagwörter:

Oxygen Vacancy

Resistive Switching

High Resistance State

Resistive Random Access Memory

Memory Window

Anmerkung:

© Springer Science+Business Media New York 2015

Übergeordnetes Werk:

Enthalten in: Journal of materials science - Springer US, 1966, 50(2015), 21 vom: 14. Juli, Seite 6961-6969

Übergeordnetes Werk:

volume:50 ; year:2015 ; number:21 ; day:14 ; month:07 ; pages:6961-6969

Links:

Volltext

DOI / URN:

10.1007/s10853-015-9247-y

Katalog-ID:

OLC2046406389

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