Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere
Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substr...
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Gespeichert in:
| Autor*in: |
Trupina, L. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Springer US, 1966, 51(2016), 18 vom: 16. Juni, Seite 8711-8717 |
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| Übergeordnetes Werk: |
volume:51 ; year:2016 ; number:18 ; day:16 ; month:06 ; pages:8711-8717 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10853-016-0131-1 |
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| Katalog-ID: |
OLC2046414993 |
|---|
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| 245 | 1 | 0 | |a Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere |
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| 520 | |a Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. | ||
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| 650 | 4 | |a Oxide Thin Film | |
| 650 | 4 | |a Ferroelectric Thin Film | |
| 650 | 4 | |a Titanium Thin Film | |
| 700 | 1 | |a Nedelcu, L. |4 aut | |
| 700 | 1 | |a Negrila, C. |4 aut | |
| 700 | 1 | |a Banciu, M. G. |4 aut | |
| 700 | 1 | |a Huitema, L. |4 aut | |
| 700 | 1 | |a Crunteanu, A. |4 aut | |
| 700 | 1 | |a Rammal, M. |4 aut | |
| 700 | 1 | |a Ghalem, A. |4 aut | |
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10.1007/s10853-016-0131-1 doi (DE-627)OLC2046414993 (DE-He213)s10853-016-0131-1-p DE-627 ger DE-627 rakwb eng 670 VZ Trupina, L. verfasserin aut Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. Iridium Bottom Electrode Oxide Thin Film Ferroelectric Thin Film Titanium Thin Film Nedelcu, L. aut Negrila, C. aut Banciu, M. G. aut Huitema, L. aut Crunteanu, A. aut Rammal, M. aut Ghalem, A. aut Enthalten in Journal of materials science Springer US, 1966 51(2016), 18 vom: 16. Juni, Seite 8711-8717 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:51 year:2016 number:18 day:16 month:06 pages:8711-8717 https://doi.org/10.1007/s10853-016-0131-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 51 2016 18 16 06 8711-8717 |
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10.1007/s10853-016-0131-1 doi (DE-627)OLC2046414993 (DE-He213)s10853-016-0131-1-p DE-627 ger DE-627 rakwb eng 670 VZ Trupina, L. verfasserin aut Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. Iridium Bottom Electrode Oxide Thin Film Ferroelectric Thin Film Titanium Thin Film Nedelcu, L. aut Negrila, C. aut Banciu, M. G. aut Huitema, L. aut Crunteanu, A. aut Rammal, M. aut Ghalem, A. aut Enthalten in Journal of materials science Springer US, 1966 51(2016), 18 vom: 16. Juni, Seite 8711-8717 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:51 year:2016 number:18 day:16 month:06 pages:8711-8717 https://doi.org/10.1007/s10853-016-0131-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 51 2016 18 16 06 8711-8717 |
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10.1007/s10853-016-0131-1 doi (DE-627)OLC2046414993 (DE-He213)s10853-016-0131-1-p DE-627 ger DE-627 rakwb eng 670 VZ Trupina, L. verfasserin aut Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. Iridium Bottom Electrode Oxide Thin Film Ferroelectric Thin Film Titanium Thin Film Nedelcu, L. aut Negrila, C. aut Banciu, M. G. aut Huitema, L. aut Crunteanu, A. aut Rammal, M. aut Ghalem, A. aut Enthalten in Journal of materials science Springer US, 1966 51(2016), 18 vom: 16. Juni, Seite 8711-8717 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:51 year:2016 number:18 day:16 month:06 pages:8711-8717 https://doi.org/10.1007/s10853-016-0131-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 51 2016 18 16 06 8711-8717 |
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10.1007/s10853-016-0131-1 doi (DE-627)OLC2046414993 (DE-He213)s10853-016-0131-1-p DE-627 ger DE-627 rakwb eng 670 VZ Trupina, L. verfasserin aut Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. Iridium Bottom Electrode Oxide Thin Film Ferroelectric Thin Film Titanium Thin Film Nedelcu, L. aut Negrila, C. aut Banciu, M. G. aut Huitema, L. aut Crunteanu, A. aut Rammal, M. aut Ghalem, A. aut Enthalten in Journal of materials science Springer US, 1966 51(2016), 18 vom: 16. Juni, Seite 8711-8717 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:51 year:2016 number:18 day:16 month:06 pages:8711-8717 https://doi.org/10.1007/s10853-016-0131-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 51 2016 18 16 06 8711-8717 |
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10.1007/s10853-016-0131-1 doi (DE-627)OLC2046414993 (DE-He213)s10853-016-0131-1-p DE-627 ger DE-627 rakwb eng 670 VZ Trupina, L. verfasserin aut Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. Iridium Bottom Electrode Oxide Thin Film Ferroelectric Thin Film Titanium Thin Film Nedelcu, L. aut Negrila, C. aut Banciu, M. G. aut Huitema, L. aut Crunteanu, A. aut Rammal, M. aut Ghalem, A. aut Enthalten in Journal of materials science Springer US, 1966 51(2016), 18 vom: 16. Juni, Seite 8711-8717 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:51 year:2016 number:18 day:16 month:06 pages:8711-8717 https://doi.org/10.1007/s10853-016-0131-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 51 2016 18 16 06 8711-8717 |
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growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere |
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Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere |
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Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. © Springer Science+Business Media New York 2016 |
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Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. © Springer Science+Business Media New York 2016 |
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Abstract The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on $ SiO_{2} $/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 °C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films. © Springer Science+Business Media New York 2016 |
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