Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates
Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate...
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Gespeichert in:
| Autor*in: |
Wang, Haiyan [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Springer US, 1966, 52(2016), 3 vom: 14. Okt., Seite 1318-1329 |
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| Übergeordnetes Werk: |
volume:52 ; year:2016 ; number:3 ; day:14 ; month:10 ; pages:1318-1329 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10853-016-0427-1 |
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| Katalog-ID: |
OLC204641859X |
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| 245 | 1 | 0 | |a Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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| 520 | |a Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. | ||
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| 700 | 1 | |a Li, Guoqiang |4 aut | |
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10.1007/s10853-016-0427-1 doi (DE-627)OLC204641859X (DE-He213)s10853-016-0427-1-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Haiyan verfasserin aut Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness Wang, Wenliang aut Yang, Weijia aut Zhu, Yunnong aut Lin, Zhiting aut Li, Guoqiang aut Enthalten in Journal of materials science Springer US, 1966 52(2016), 3 vom: 14. Okt., Seite 1318-1329 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:52 year:2016 number:3 day:14 month:10 pages:1318-1329 https://doi.org/10.1007/s10853-016-0427-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 52 2016 3 14 10 1318-1329 |
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10.1007/s10853-016-0427-1 doi (DE-627)OLC204641859X (DE-He213)s10853-016-0427-1-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Haiyan verfasserin aut Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness Wang, Wenliang aut Yang, Weijia aut Zhu, Yunnong aut Lin, Zhiting aut Li, Guoqiang aut Enthalten in Journal of materials science Springer US, 1966 52(2016), 3 vom: 14. Okt., Seite 1318-1329 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:52 year:2016 number:3 day:14 month:10 pages:1318-1329 https://doi.org/10.1007/s10853-016-0427-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 52 2016 3 14 10 1318-1329 |
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10.1007/s10853-016-0427-1 doi (DE-627)OLC204641859X (DE-He213)s10853-016-0427-1-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Haiyan verfasserin aut Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness Wang, Wenliang aut Yang, Weijia aut Zhu, Yunnong aut Lin, Zhiting aut Li, Guoqiang aut Enthalten in Journal of materials science Springer US, 1966 52(2016), 3 vom: 14. Okt., Seite 1318-1329 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:52 year:2016 number:3 day:14 month:10 pages:1318-1329 https://doi.org/10.1007/s10853-016-0427-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 52 2016 3 14 10 1318-1329 |
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10.1007/s10853-016-0427-1 doi (DE-627)OLC204641859X (DE-He213)s10853-016-0427-1-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Haiyan verfasserin aut Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness Wang, Wenliang aut Yang, Weijia aut Zhu, Yunnong aut Lin, Zhiting aut Li, Guoqiang aut Enthalten in Journal of materials science Springer US, 1966 52(2016), 3 vom: 14. Okt., Seite 1318-1329 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:52 year:2016 number:3 day:14 month:10 pages:1318-1329 https://doi.org/10.1007/s10853-016-0427-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 52 2016 3 14 10 1318-1329 |
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10.1007/s10853-016-0427-1 doi (DE-627)OLC204641859X (DE-He213)s10853-016-0427-1-p DE-627 ger DE-627 rakwb eng 670 VZ Wang, Haiyan verfasserin aut Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2016 Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness Wang, Wenliang aut Yang, Weijia aut Zhu, Yunnong aut Lin, Zhiting aut Li, Guoqiang aut Enthalten in Journal of materials science Springer US, 1966 52(2016), 3 vom: 14. Okt., Seite 1318-1329 (DE-627)129546372 (DE-600)218324-9 (DE-576)014996774 0022-2461 nnns volume:52 year:2016 number:3 day:14 month:10 pages:1318-1329 https://doi.org/10.1007/s10853-016-0427-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_30 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_4046 GBV_ILN_4305 GBV_ILN_4323 AR 52 2016 3 14 10 1318-1329 |
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Wang, Haiyan |
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Wang, Haiyan ddc 670 misc Buffer Layer misc Pulse Laser Deposition misc Crystalline Quality misc Large Tensile Stress misc Buffer Layer Thickness Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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670 VZ Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates Buffer Layer Pulse Laser Deposition Crystalline Quality Large Tensile Stress Buffer Layer Thickness |
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ddc 670 misc Buffer Layer misc Pulse Laser Deposition misc Crystalline Quality misc Large Tensile Stress misc Buffer Layer Thickness |
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ddc 670 misc Buffer Layer misc Pulse Laser Deposition misc Crystalline Quality misc Large Tensile Stress misc Buffer Layer Thickness |
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Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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Wang, Haiyan |
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Wang, Haiyan Wang, Wenliang Yang, Weijia Zhu, Yunnong Lin, Zhiting Li, Guoqiang |
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employing al buffer layer with al droplets-distributed surface to obtain high-quality and stress-free gan epitaxial films on si substrates |
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Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. © Springer Science+Business Media New York 2016 |
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Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. © Springer Science+Business Media New York 2016 |
| abstract_unstemmed |
Abstract Al buffer layers with Al droplets-distributed surface have been employed to grow high-quality and stress-free GaN epitaxial films on Si substrates. The Al droplets are proved to efficiently improve the quality of as-grown GaN. On the one hand, they can act as nucleation seeds to facilitate the epitaxial growth, improving the crystalline quality and surface morphology of as-grown GaN epitaxial films. On the other hand, they also can compensate the huge compressive stress produced by Al buffer layer during the cooling process, achieving stress-free film. The density and volume of Al droplets greatly impact the properties of as-grown GaN epitaxial films. The GaN epitaxial film grown on the Al buffer layer with many small Al droplets uniformly distributed on it shows the best crystalline quality with the full-width at half maximum (FWHM) of GaN(0002) and GaN(10–12) as 0.5° and 0.7°, respectively, and flat surface with the smallest surface root-mean-square roughness of 3.8 nm. In addition, it also exhibits relatively better photoelectric properties with an FWHM of near band gap emission peak of 18 nm, carrier concentration of 2.0 × $ 10^{17} $ $ cm^{−3} $, and mobility of 137.1 $ cm^{2} $/Vs. This work has revealed the advantages of Al buffer layer and the important effects of buffer layer surface on achieving high-quality GaN by PLD, which is of significance for various applications of GaN-based devices. © Springer Science+Business Media New York 2016 |
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Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates |
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