Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface
Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the s...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Anuradha, K G [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1988 |
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| Schlagwörter: |
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| Anmerkung: |
© the Indian Academy of Sciences 1988 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Springer India, 1979, 10(1988), 4 vom: Juli, Seite 303-311 |
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| Übergeordnetes Werk: |
volume:10 ; year:1988 ; number:4 ; month:07 ; pages:303-311 |
| Links: |
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| DOI / URN: |
10.1007/BF02744301 |
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| 520 | |a Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. | ||
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10.1007/BF02744301 doi (DE-627)OLC2055179225 (DE-He213)BF02744301-p DE-627 ger DE-627 rakwb eng 600 VZ Anuradha, K G verfasserin aut Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1988 Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. Transient photocurrent response photoelectrochemistry surface states Contractor, A Q aut Enthalten in Bulletin of materials science Springer India, 1979 10(1988), 4 vom: Juli, Seite 303-311 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:10 year:1988 number:4 month:07 pages:303-311 https://doi.org/10.1007/BF02744301 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 10 1988 4 07 303-311 |
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10.1007/BF02744301 doi (DE-627)OLC2055179225 (DE-He213)BF02744301-p DE-627 ger DE-627 rakwb eng 600 VZ Anuradha, K G verfasserin aut Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1988 Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. Transient photocurrent response photoelectrochemistry surface states Contractor, A Q aut Enthalten in Bulletin of materials science Springer India, 1979 10(1988), 4 vom: Juli, Seite 303-311 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:10 year:1988 number:4 month:07 pages:303-311 https://doi.org/10.1007/BF02744301 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 10 1988 4 07 303-311 |
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10.1007/BF02744301 doi (DE-627)OLC2055179225 (DE-He213)BF02744301-p DE-627 ger DE-627 rakwb eng 600 VZ Anuradha, K G verfasserin aut Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1988 Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. Transient photocurrent response photoelectrochemistry surface states Contractor, A Q aut Enthalten in Bulletin of materials science Springer India, 1979 10(1988), 4 vom: Juli, Seite 303-311 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:10 year:1988 number:4 month:07 pages:303-311 https://doi.org/10.1007/BF02744301 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 10 1988 4 07 303-311 |
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10.1007/BF02744301 doi (DE-627)OLC2055179225 (DE-He213)BF02744301-p DE-627 ger DE-627 rakwb eng 600 VZ Anuradha, K G verfasserin aut Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1988 Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. Transient photocurrent response photoelectrochemistry surface states Contractor, A Q aut Enthalten in Bulletin of materials science Springer India, 1979 10(1988), 4 vom: Juli, Seite 303-311 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:10 year:1988 number:4 month:07 pages:303-311 https://doi.org/10.1007/BF02744301 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 10 1988 4 07 303-311 |
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10.1007/BF02744301 doi (DE-627)OLC2055179225 (DE-He213)BF02744301-p DE-627 ger DE-627 rakwb eng 600 VZ Anuradha, K G verfasserin aut Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface 1988 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1988 Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. Transient photocurrent response photoelectrochemistry surface states Contractor, A Q aut Enthalten in Bulletin of materials science Springer India, 1979 10(1988), 4 vom: Juli, Seite 303-311 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:10 year:1988 number:4 month:07 pages:303-311 https://doi.org/10.1007/BF02744301 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 10 1988 4 07 303-311 |
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Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. © the Indian Academy of Sciences 1988 |
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Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. © the Indian Academy of Sciences 1988 |
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Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed. © the Indian Academy of Sciences 1988 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2055179225</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402060656.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1988 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02744301</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2055179225</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02744301-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Anuradha, K G</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1988</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© the Indian Academy of Sciences 1988</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An experimental study of the transient photocurrent response of p-Si/0·5 M $ H_{2} $$ SO_{4} $ interface is presented. The results have been analysed in terms of a theoretical model wherein surface states are assumed to be present at a discrete levelEs and communicate exclusively with the semiconductor. The results indicate substantial Fermi level pinning at this interface. Influence of surface oxide films and Pt deposition on the transient response is also discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transient photocurrent response</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoelectrochemistry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">surface states</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Contractor, A Q</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Bulletin of materials science</subfield><subfield code="d">Springer India, 1979</subfield><subfield code="g">10(1988), 4 vom: Juli, Seite 303-311</subfield><subfield code="w">(DE-627)130547476</subfield><subfield code="w">(DE-600)781668-6</subfield><subfield code="w">(DE-576)9130547474</subfield><subfield code="x">0250-4707</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:10</subfield><subfield code="g">year:1988</subfield><subfield code="g">number:4</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:303-311</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02744301</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">10</subfield><subfield code="j">1988</subfield><subfield code="e">4</subfield><subfield code="c">07</subfield><subfield code="h">303-311</subfield></datafield></record></collection>
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