SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection
Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have bee...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tyagi, A K [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Academy of Sciences 1993 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Springer India, 1979, 16(1993), 1 vom: Feb., Seite 45-49 |
|---|---|
| Übergeordnetes Werk: |
volume:16 ; year:1993 ; number:1 ; month:02 ; pages:45-49 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02745306 |
|---|
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| 245 | 1 | 0 | |a SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection |
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| 520 | |a Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. | ||
| 650 | 4 | |a Ion implantation | |
| 650 | 4 | |a secondary ion mass spectrometry | |
| 650 | 4 | |a depth profiling | |
| 650 | 4 | |a sputtering | |
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| 700 | 1 | |a Nair, K G M |4 aut | |
| 700 | 1 | |a Krishan, K |4 aut | |
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10.1007/BF02745306 doi (DE-627)OLC2055183575 (DE-He213)BF02745306-p DE-627 ger DE-627 rakwb eng 600 VZ Tyagi, A K verfasserin aut SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1993 Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions Nair, K G M aut Krishan, K aut Enthalten in Bulletin of materials science Springer India, 1979 16(1993), 1 vom: Feb., Seite 45-49 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:16 year:1993 number:1 month:02 pages:45-49 https://doi.org/10.1007/BF02745306 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 16 1993 1 02 45-49 |
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10.1007/BF02745306 doi (DE-627)OLC2055183575 (DE-He213)BF02745306-p DE-627 ger DE-627 rakwb eng 600 VZ Tyagi, A K verfasserin aut SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1993 Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions Nair, K G M aut Krishan, K aut Enthalten in Bulletin of materials science Springer India, 1979 16(1993), 1 vom: Feb., Seite 45-49 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:16 year:1993 number:1 month:02 pages:45-49 https://doi.org/10.1007/BF02745306 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 16 1993 1 02 45-49 |
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10.1007/BF02745306 doi (DE-627)OLC2055183575 (DE-He213)BF02745306-p DE-627 ger DE-627 rakwb eng 600 VZ Tyagi, A K verfasserin aut SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1993 Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions Nair, K G M aut Krishan, K aut Enthalten in Bulletin of materials science Springer India, 1979 16(1993), 1 vom: Feb., Seite 45-49 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:16 year:1993 number:1 month:02 pages:45-49 https://doi.org/10.1007/BF02745306 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 16 1993 1 02 45-49 |
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10.1007/BF02745306 doi (DE-627)OLC2055183575 (DE-He213)BF02745306-p DE-627 ger DE-627 rakwb eng 600 VZ Tyagi, A K verfasserin aut SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1993 Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions Nair, K G M aut Krishan, K aut Enthalten in Bulletin of materials science Springer India, 1979 16(1993), 1 vom: Feb., Seite 45-49 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:16 year:1993 number:1 month:02 pages:45-49 https://doi.org/10.1007/BF02745306 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 16 1993 1 02 45-49 |
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10.1007/BF02745306 doi (DE-627)OLC2055183575 (DE-He213)BF02745306-p DE-627 ger DE-627 rakwb eng 600 VZ Tyagi, A K verfasserin aut SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection 1993 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1993 Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions Nair, K G M aut Krishan, K aut Enthalten in Bulletin of materials science Springer India, 1979 16(1993), 1 vom: Feb., Seite 45-49 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:16 year:1993 number:1 month:02 pages:45-49 https://doi.org/10.1007/BF02745306 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 16 1993 1 02 45-49 |
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600 VZ SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection Ion implantation secondary ion mass spectrometry depth profiling sputtering molecular ions |
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sims depth profiling of implanted helium in al-mn alloy using $ cshe^{+} $ molecular ion detection |
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SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection |
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Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. © Indian Academy of Sciences 1993 |
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Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. © Indian Academy of Sciences 1993 |
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Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM. © Indian Academy of Sciences 1993 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2055183575</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402060731.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1993 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02745306</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2055183575</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02745306-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Tyagi, A K</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">SIMS depth profiling of implanted helium in Al-Mn alloy using $ CsHe^{+} $ molecular ion detection</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Academy of Sciences 1993</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The use of $ Cs^{+} $ primary ions in conjunction with the detection of $ CsHe^{+} $ molecular ions is proposed for the analysis of helium in metals by secondary ion mass spectrometry (SIMS). Concentration depth profiles of helium implanted at 100keV in $ Al_{60} $$ Mn_{40} $ alloy have been measured. Helium concentrations down to about 100 ppm were measured at moderately low sputtering rate of 0·5nm/sec. The experimentally determined implantation profile of helium is compared with the theoretical profile obtained using the Monte Carlo Code TRIM.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">secondary ion mass spectrometry</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">depth profiling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">sputtering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molecular ions</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nair, K G M</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Krishan, K</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Bulletin of materials science</subfield><subfield code="d">Springer India, 1979</subfield><subfield code="g">16(1993), 1 vom: Feb., Seite 45-49</subfield><subfield code="w">(DE-627)130547476</subfield><subfield code="w">(DE-600)781668-6</subfield><subfield code="w">(DE-576)9130547474</subfield><subfield code="x">0250-4707</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:16</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:45-49</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02745306</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">16</subfield><subfield code="j">1993</subfield><subfield code="e">1</subfield><subfield code="c">02</subfield><subfield code="h">45-49</subfield></datafield></record></collection>
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