Some new results in porous silicon
Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography h...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jain, V K [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1994 |
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| Schlagwörter: |
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| Anmerkung: |
© the Indian Academy of Sciences 1994 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Springer India, 1979, 17(1994), 5 vom: Okt., Seite 551-561 |
|---|---|
| Übergeordnetes Werk: |
volume:17 ; year:1994 ; number:5 ; month:10 ; pages:551-561 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02757900 |
|---|
| Katalog-ID: |
OLC2055184628 |
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| 520 | |a Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. | ||
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10.1007/BF02757900 doi (DE-627)OLC2055184628 (DE-He213)BF02757900-p DE-627 ger DE-627 rakwb eng 600 VZ Jain, V K verfasserin aut Some new results in porous silicon 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1994 Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. Porous silicon p-n junction Gupta, Amita aut Jalwania, C R aut Kumar, Adarsh aut Singhal, G K aut Arora, O P aut Ahuja, D S aut Puri, P P aut Singh, R aut Pal, M aut Enthalten in Bulletin of materials science Springer India, 1979 17(1994), 5 vom: Okt., Seite 551-561 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:17 year:1994 number:5 month:10 pages:551-561 https://doi.org/10.1007/BF02757900 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 17 1994 5 10 551-561 |
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10.1007/BF02757900 doi (DE-627)OLC2055184628 (DE-He213)BF02757900-p DE-627 ger DE-627 rakwb eng 600 VZ Jain, V K verfasserin aut Some new results in porous silicon 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1994 Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. Porous silicon p-n junction Gupta, Amita aut Jalwania, C R aut Kumar, Adarsh aut Singhal, G K aut Arora, O P aut Ahuja, D S aut Puri, P P aut Singh, R aut Pal, M aut Enthalten in Bulletin of materials science Springer India, 1979 17(1994), 5 vom: Okt., Seite 551-561 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:17 year:1994 number:5 month:10 pages:551-561 https://doi.org/10.1007/BF02757900 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 17 1994 5 10 551-561 |
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10.1007/BF02757900 doi (DE-627)OLC2055184628 (DE-He213)BF02757900-p DE-627 ger DE-627 rakwb eng 600 VZ Jain, V K verfasserin aut Some new results in porous silicon 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1994 Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. Porous silicon p-n junction Gupta, Amita aut Jalwania, C R aut Kumar, Adarsh aut Singhal, G K aut Arora, O P aut Ahuja, D S aut Puri, P P aut Singh, R aut Pal, M aut Enthalten in Bulletin of materials science Springer India, 1979 17(1994), 5 vom: Okt., Seite 551-561 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:17 year:1994 number:5 month:10 pages:551-561 https://doi.org/10.1007/BF02757900 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 17 1994 5 10 551-561 |
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10.1007/BF02757900 doi (DE-627)OLC2055184628 (DE-He213)BF02757900-p DE-627 ger DE-627 rakwb eng 600 VZ Jain, V K verfasserin aut Some new results in porous silicon 1994 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © the Indian Academy of Sciences 1994 Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. Porous silicon p-n junction Gupta, Amita aut Jalwania, C R aut Kumar, Adarsh aut Singhal, G K aut Arora, O P aut Ahuja, D S aut Puri, P P aut Singh, R aut Pal, M aut Enthalten in Bulletin of materials science Springer India, 1979 17(1994), 5 vom: Okt., Seite 551-561 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:17 year:1994 number:5 month:10 pages:551-561 https://doi.org/10.1007/BF02757900 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 17 1994 5 10 551-561 |
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Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. © the Indian Academy of Sciences 1994 |
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Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. © the Indian Academy of Sciences 1994 |
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Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested. © the Indian Academy of Sciences 1994 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2055184628</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402060740.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1994 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02757900</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2055184628</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02757900-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jain, V K</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Some new results in porous silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© the Indian Academy of Sciences 1994</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. 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