Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface
Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained b...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wad, U P [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Academy of Sciences 1999 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Springer India, 1979, 22(1999), 2 vom: Apr., Seite 95-101 |
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| Übergeordnetes Werk: |
volume:22 ; year:1999 ; number:2 ; month:04 ; pages:95-101 |
| Links: |
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| DOI / URN: |
10.1007/BF02745560 |
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OLC2055189719 |
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| 520 | |a Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. | ||
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10.1007/BF02745560 doi (DE-627)OLC2055189719 (DE-He213)BF02745560-p DE-627 ger DE-627 rakwb eng 600 VZ Wad, U P verfasserin aut Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1999 Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. Adatom adsorption surface reconstruction Limaye, A V aut Gokhale, M P aut Ogale, S B aut Enthalten in Bulletin of materials science Springer India, 1979 22(1999), 2 vom: Apr., Seite 95-101 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:22 year:1999 number:2 month:04 pages:95-101 https://doi.org/10.1007/BF02745560 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 22 1999 2 04 95-101 |
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10.1007/BF02745560 doi (DE-627)OLC2055189719 (DE-He213)BF02745560-p DE-627 ger DE-627 rakwb eng 600 VZ Wad, U P verfasserin aut Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1999 Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. Adatom adsorption surface reconstruction Limaye, A V aut Gokhale, M P aut Ogale, S B aut Enthalten in Bulletin of materials science Springer India, 1979 22(1999), 2 vom: Apr., Seite 95-101 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:22 year:1999 number:2 month:04 pages:95-101 https://doi.org/10.1007/BF02745560 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 22 1999 2 04 95-101 |
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10.1007/BF02745560 doi (DE-627)OLC2055189719 (DE-He213)BF02745560-p DE-627 ger DE-627 rakwb eng 600 VZ Wad, U P verfasserin aut Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1999 Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. Adatom adsorption surface reconstruction Limaye, A V aut Gokhale, M P aut Ogale, S B aut Enthalten in Bulletin of materials science Springer India, 1979 22(1999), 2 vom: Apr., Seite 95-101 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:22 year:1999 number:2 month:04 pages:95-101 https://doi.org/10.1007/BF02745560 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 22 1999 2 04 95-101 |
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10.1007/BF02745560 doi (DE-627)OLC2055189719 (DE-He213)BF02745560-p DE-627 ger DE-627 rakwb eng 600 VZ Wad, U P verfasserin aut Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1999 Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. Adatom adsorption surface reconstruction Limaye, A V aut Gokhale, M P aut Ogale, S B aut Enthalten in Bulletin of materials science Springer India, 1979 22(1999), 2 vom: Apr., Seite 95-101 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:22 year:1999 number:2 month:04 pages:95-101 https://doi.org/10.1007/BF02745560 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 22 1999 2 04 95-101 |
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10.1007/BF02745560 doi (DE-627)OLC2055189719 (DE-He213)BF02745560-p DE-627 ger DE-627 rakwb eng 600 VZ Wad, U P verfasserin aut Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 1999 Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. Adatom adsorption surface reconstruction Limaye, A V aut Gokhale, M P aut Ogale, S B aut Enthalten in Bulletin of materials science Springer India, 1979 22(1999), 2 vom: Apr., Seite 95-101 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:22 year:1999 number:2 month:04 pages:95-101 https://doi.org/10.1007/BF02745560 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 22 1999 2 04 95-101 |
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Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface |
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Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. © Indian Academy of Sciences 1999 |
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Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. © Indian Academy of Sciences 1999 |
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Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones. © Indian Academy of Sciences 1999 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2055189719</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402060817.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s1999 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02745560</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2055189719</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02745560-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wad, U P</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Comparative study of adatom induced relaxations and energetics for Si, Ge and carbon adsorption on a (2×1) Si(001) surface</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Academy of Sciences 1999</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Surface complexes involving silicon, germanium and carbon adatom on predefined adsorption sites of the 2×1 reconstructed Si(001) surface are investigated for their energetics and associated structural relaxations. Tersoff’s semi-empirical potential is used and the relaxations are obtained by employing the Monte Carlo simulated annealing technique. The results for the cases of Si, Ge and carbon adsorptions are compared. It is found that Si and Ge as adatoms on Si(001) 2×1 reconstructed surface behave in a similar fashion but the carbon adatom behaves in a markedly different way. Specifically, the carbon adatom induces a Si-C-Si chain configuration. It is also found that the adsorption sites between two dimer rows are the most favourable ones.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Adatom adsorption</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">surface reconstruction</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Limaye, A V</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gokhale, M P</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ogale, S B</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Bulletin of materials science</subfield><subfield code="d">Springer India, 1979</subfield><subfield code="g">22(1999), 2 vom: Apr., Seite 95-101</subfield><subfield code="w">(DE-627)130547476</subfield><subfield code="w">(DE-600)781668-6</subfield><subfield code="w">(DE-576)9130547474</subfield><subfield code="x">0250-4707</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:22</subfield><subfield code="g">year:1999</subfield><subfield code="g">number:2</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:95-101</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02745560</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">22</subfield><subfield code="j">1999</subfield><subfield code="e">2</subfield><subfield code="c">04</subfield><subfield code="h">95-101</subfield></datafield></record></collection>
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