Some spectral response characteristics of ZnTe thin films
Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sarma, R. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Schlagwörter: |
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| Anmerkung: |
© Indian Academy of Sciences 2006 |
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| Übergeordnetes Werk: |
Enthalten in: Bulletin of materials science - Springer India, 1979, 29(2006), 1 vom: Feb., Seite 15-16 |
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| Übergeordnetes Werk: |
volume:29 ; year:2006 ; number:1 ; month:02 ; pages:15-16 |
| Links: |
|---|
| DOI / URN: |
10.1007/BF02709348 |
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OLC2055197681 |
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| 520 | |a Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. | ||
| 650 | 4 | |a ZnTe thin films | |
| 650 | 4 | |a photocurrent | |
| 650 | 4 | |a spectral response | |
| 700 | 1 | |a Mazumdar, N. |4 aut | |
| 700 | 1 | |a Das, H. L. |4 aut | |
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10.1007/BF02709348 doi (DE-627)OLC2055197681 (DE-He213)BF02709348-p DE-627 ger DE-627 rakwb eng 600 VZ Sarma, R. verfasserin aut Some spectral response characteristics of ZnTe thin films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. ZnTe thin films photocurrent spectral response Mazumdar, N. aut Das, H. L. aut Enthalten in Bulletin of materials science Springer India, 1979 29(2006), 1 vom: Feb., Seite 15-16 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:29 year:2006 number:1 month:02 pages:15-16 https://doi.org/10.1007/BF02709348 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 29 2006 1 02 15-16 |
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10.1007/BF02709348 doi (DE-627)OLC2055197681 (DE-He213)BF02709348-p DE-627 ger DE-627 rakwb eng 600 VZ Sarma, R. verfasserin aut Some spectral response characteristics of ZnTe thin films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. ZnTe thin films photocurrent spectral response Mazumdar, N. aut Das, H. L. aut Enthalten in Bulletin of materials science Springer India, 1979 29(2006), 1 vom: Feb., Seite 15-16 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:29 year:2006 number:1 month:02 pages:15-16 https://doi.org/10.1007/BF02709348 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 29 2006 1 02 15-16 |
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10.1007/BF02709348 doi (DE-627)OLC2055197681 (DE-He213)BF02709348-p DE-627 ger DE-627 rakwb eng 600 VZ Sarma, R. verfasserin aut Some spectral response characteristics of ZnTe thin films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. ZnTe thin films photocurrent spectral response Mazumdar, N. aut Das, H. L. aut Enthalten in Bulletin of materials science Springer India, 1979 29(2006), 1 vom: Feb., Seite 15-16 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:29 year:2006 number:1 month:02 pages:15-16 https://doi.org/10.1007/BF02709348 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 29 2006 1 02 15-16 |
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10.1007/BF02709348 doi (DE-627)OLC2055197681 (DE-He213)BF02709348-p DE-627 ger DE-627 rakwb eng 600 VZ Sarma, R. verfasserin aut Some spectral response characteristics of ZnTe thin films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. ZnTe thin films photocurrent spectral response Mazumdar, N. aut Das, H. L. aut Enthalten in Bulletin of materials science Springer India, 1979 29(2006), 1 vom: Feb., Seite 15-16 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:29 year:2006 number:1 month:02 pages:15-16 https://doi.org/10.1007/BF02709348 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 29 2006 1 02 15-16 |
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10.1007/BF02709348 doi (DE-627)OLC2055197681 (DE-He213)BF02709348-p DE-627 ger DE-627 rakwb eng 600 VZ Sarma, R. verfasserin aut Some spectral response characteristics of ZnTe thin films 2006 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Indian Academy of Sciences 2006 Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. ZnTe thin films photocurrent spectral response Mazumdar, N. aut Das, H. L. aut Enthalten in Bulletin of materials science Springer India, 1979 29(2006), 1 vom: Feb., Seite 15-16 (DE-627)130547476 (DE-600)781668-6 (DE-576)9130547474 0250-4707 nnns volume:29 year:2006 number:1 month:02 pages:15-16 https://doi.org/10.1007/BF02709348 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 29 2006 1 02 15-16 |
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Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. © Indian Academy of Sciences 2006 |
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Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. © Indian Academy of Sciences 2006 |
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Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films. © Indian Academy of Sciences 2006 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2055197681</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230402060919.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2006 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/BF02709348</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2055197681</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)BF02709348-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sarma, R.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Some spectral response characteristics of ZnTe thin films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2006</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Indian Academy of Sciences 2006</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Zinc telluride thin films have been grown at room temperature and higher temperature substrates by thermal evaporation technique in a vacuum of $ 10^{-6} $ torr. A main peak in the photocurrent is observed at 781 nm (1.58 eV) with two lower amplitude peaks on the lower wavelength side and one on higher wavelength side. The evaluated thermal activation energy is found to correspond well with the main spectral peak. From these studies it can be inferred that temperatures up to 453 K is still in the extrinsic conductivity region of the studied ZnTe thin films.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ZnTe thin films</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photocurrent</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">spectral response</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mazumdar, N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Das, H. L.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Bulletin of materials science</subfield><subfield code="d">Springer India, 1979</subfield><subfield code="g">29(2006), 1 vom: Feb., Seite 15-16</subfield><subfield code="w">(DE-627)130547476</subfield><subfield code="w">(DE-600)781668-6</subfield><subfield code="w">(DE-576)9130547474</subfield><subfield code="x">0250-4707</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2006</subfield><subfield code="g">number:1</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:15-16</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02709348</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2006</subfield><subfield code="e">1</subfield><subfield code="c">02</subfield><subfield code="h">15-16</subfield></datafield></record></collection>
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