The electronic specific heat of a one-dimensional crystal with a sinusoidal potential
Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The...
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Gespeichert in:
| Autor*in: |
Lawson, J. O. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1982 |
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| Schlagwörter: |
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| Anmerkung: |
© Società Italiana di Fisica 1982 |
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| Übergeordnetes Werk: |
Enthalten in: Il Nuovo Cimento D - Kluwer Academic Publishers, 1982, 1(1982), 4 vom: Juli, Seite 449-460 |
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| Übergeordnetes Werk: |
volume:1 ; year:1982 ; number:4 ; month:07 ; pages:449-460 |
| Links: |
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| DOI / URN: |
10.1007/BF02450531 |
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OLC2055375350 |
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| 520 | |a Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. | ||
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10.1007/BF02450531 doi (DE-627)OLC2055375350 (DE-He213)BF02450531-p DE-627 ger DE-627 rakwb eng 530 VZ Lawson, J. O. verfasserin aut The electronic specific heat of a one-dimensional crystal with a sinusoidal potential 1982 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Società Italiana di Fisica 1982 Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. Brillouin Zone Periodic Potential Electron Transport Property Electronic Specific Heat Brillouin Zone Boundary Enthalten in Il Nuovo Cimento D Kluwer Academic Publishers, 1982 1(1982), 4 vom: Juli, Seite 449-460 (DE-627)130627313 (DE-600)797397-4 (DE-576)016133544 0392-6737 nnns volume:1 year:1982 number:4 month:07 pages:449-460 https://doi.org/10.1007/BF02450531 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4046 GBV_ILN_4323 AR 1 1982 4 07 449-460 |
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10.1007/BF02450531 doi (DE-627)OLC2055375350 (DE-He213)BF02450531-p DE-627 ger DE-627 rakwb eng 530 VZ Lawson, J. O. verfasserin aut The electronic specific heat of a one-dimensional crystal with a sinusoidal potential 1982 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Società Italiana di Fisica 1982 Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. Brillouin Zone Periodic Potential Electron Transport Property Electronic Specific Heat Brillouin Zone Boundary Enthalten in Il Nuovo Cimento D Kluwer Academic Publishers, 1982 1(1982), 4 vom: Juli, Seite 449-460 (DE-627)130627313 (DE-600)797397-4 (DE-576)016133544 0392-6737 nnns volume:1 year:1982 number:4 month:07 pages:449-460 https://doi.org/10.1007/BF02450531 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4046 GBV_ILN_4323 AR 1 1982 4 07 449-460 |
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10.1007/BF02450531 doi (DE-627)OLC2055375350 (DE-He213)BF02450531-p DE-627 ger DE-627 rakwb eng 530 VZ Lawson, J. O. verfasserin aut The electronic specific heat of a one-dimensional crystal with a sinusoidal potential 1982 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Società Italiana di Fisica 1982 Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. Brillouin Zone Periodic Potential Electron Transport Property Electronic Specific Heat Brillouin Zone Boundary Enthalten in Il Nuovo Cimento D Kluwer Academic Publishers, 1982 1(1982), 4 vom: Juli, Seite 449-460 (DE-627)130627313 (DE-600)797397-4 (DE-576)016133544 0392-6737 nnns volume:1 year:1982 number:4 month:07 pages:449-460 https://doi.org/10.1007/BF02450531 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4046 GBV_ILN_4323 AR 1 1982 4 07 449-460 |
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10.1007/BF02450531 doi (DE-627)OLC2055375350 (DE-He213)BF02450531-p DE-627 ger DE-627 rakwb eng 530 VZ Lawson, J. O. verfasserin aut The electronic specific heat of a one-dimensional crystal with a sinusoidal potential 1982 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Società Italiana di Fisica 1982 Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. Brillouin Zone Periodic Potential Electron Transport Property Electronic Specific Heat Brillouin Zone Boundary Enthalten in Il Nuovo Cimento D Kluwer Academic Publishers, 1982 1(1982), 4 vom: Juli, Seite 449-460 (DE-627)130627313 (DE-600)797397-4 (DE-576)016133544 0392-6737 nnns volume:1 year:1982 number:4 month:07 pages:449-460 https://doi.org/10.1007/BF02450531 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4046 GBV_ILN_4323 AR 1 1982 4 07 449-460 |
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10.1007/BF02450531 doi (DE-627)OLC2055375350 (DE-He213)BF02450531-p DE-627 ger DE-627 rakwb eng 530 VZ Lawson, J. O. verfasserin aut The electronic specific heat of a one-dimensional crystal with a sinusoidal potential 1982 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Società Italiana di Fisica 1982 Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. Brillouin Zone Periodic Potential Electron Transport Property Electronic Specific Heat Brillouin Zone Boundary Enthalten in Il Nuovo Cimento D Kluwer Academic Publishers, 1982 1(1982), 4 vom: Juli, Seite 449-460 (DE-627)130627313 (DE-600)797397-4 (DE-576)016133544 0392-6737 nnns volume:1 year:1982 number:4 month:07 pages:449-460 https://doi.org/10.1007/BF02450531 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_22 GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_4046 GBV_ILN_4323 AR 1 1982 4 07 449-460 |
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Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. © Società Italiana di Fisica 1982 |
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Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. © Società Italiana di Fisica 1982 |
| abstract_unstemmed |
Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential. © Società Italiana di Fisica 1982 |
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O.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The electronic specific heat of a one-dimensional crystal with a sinusoidal potential</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1982</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Società Italiana di Fisica 1982</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Summary The electronic specific heat of a one-dimensional crystal with a sinusoidal potential is examined in the second quantized formulation. Two electrons per lattice site are assumed to be under the influence of the potential; electron-electron interactions via Coulomb repulsion are ignored. The Green’s function equation-of-motion technique is utilized to obtain an exact expression for the specific heat forK, the allowed linear momenta, restricted to two Brillouin ones. The specific heat shows metal, semiconductor-to-metal, or insulator-to-metal behavior as a function of temperature, dependent upon the well depth of the sinusoidal potential.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Brillouin Zone</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Periodic Potential</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron Transport Property</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic Specific Heat</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Brillouin Zone Boundary</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Il Nuovo Cimento D</subfield><subfield code="d">Kluwer Academic Publishers, 1982</subfield><subfield code="g">1(1982), 4 vom: Juli, Seite 449-460</subfield><subfield code="w">(DE-627)130627313</subfield><subfield code="w">(DE-600)797397-4</subfield><subfield code="w">(DE-576)016133544</subfield><subfield code="x">0392-6737</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1</subfield><subfield code="g">year:1982</subfield><subfield code="g">number:4</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:449-460</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1007/BF02450531</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1</subfield><subfield code="j">1982</subfield><subfield code="e">4</subfield><subfield code="c">07</subfield><subfield code="h">449-460</subfield></datafield></record></collection>
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