Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem
Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurem...
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| Autor*in: |
Alkeev, N. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of communications technology and electronics - SP MAIK Nauka/Interperiodica, 1993, 57(2012), 6 vom: Juni, Seite 634-641 |
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| Übergeordnetes Werk: |
volume:57 ; year:2012 ; number:6 ; month:06 ; pages:634-641 |
| Links: |
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| DOI / URN: |
10.1134/S1064226912010019 |
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| Katalog-ID: |
OLC2059679591 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2059679591 | ||
| 003 | DE-627 | ||
| 005 | 20230302133912.0 | ||
| 007 | tu | ||
| 008 | 200819s2012 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1134/S1064226912010019 |2 doi | |
| 035 | |a (DE-627)OLC2059679591 | ||
| 035 | |a (DE-He213)S1064226912010019-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 620 |q VZ |
| 100 | 1 | |a Alkeev, N. V. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| 264 | 1 | |c 2012 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Pleiades Publishing, Ltd. 2012 | ||
| 520 | |a Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. | ||
| 650 | 4 | |a Bias Voltage | |
| 650 | 4 | |a Shot Noise | |
| 650 | 4 | |a Factor Method | |
| 650 | 4 | |a Noise Generator | |
| 650 | 4 | |a Noise Factor | |
| 700 | 1 | |a Averin, S. V. |4 aut | |
| 700 | 1 | |a Dorofeev, A. A. |4 aut | |
| 700 | 1 | |a Gladysheva, N. B. |4 aut | |
| 700 | 1 | |a Torgashin, M. Yu. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of communications technology and electronics |d SP MAIK Nauka/Interperiodica, 1993 |g 57(2012), 6 vom: Juni, Seite 634-641 |w (DE-627)171168402 |w (DE-600)1160383-5 |w (DE-576)038494272 |x 1064-2269 |7 nnns |
| 773 | 1 | 8 | |g volume:57 |g year:2012 |g number:6 |g month:06 |g pages:634-641 |
| 856 | 4 | 1 | |u https://doi.org/10.1134/S1064226912010019 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 57 |j 2012 |e 6 |c 06 |h 634-641 | ||
| author_variant |
n v a nv nva s v a sv sva a a d aa aad n b g nb nbg m y t my myt |
|---|---|
| matchkey_str |
article:10642269:2012----::htosoaihpersnneunlndoeaeote |
| hierarchy_sort_str |
2012 |
| publishDate |
2012 |
| allfields |
10.1134/S1064226912010019 doi (DE-627)OLC2059679591 (DE-He213)S1064226912010019-p DE-627 ger DE-627 rakwb eng 620 VZ Alkeev, N. V. verfasserin aut Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2012 Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor Averin, S. V. aut Dorofeev, A. A. aut Gladysheva, N. B. aut Torgashin, M. Yu. aut Enthalten in Journal of communications technology and electronics SP MAIK Nauka/Interperiodica, 1993 57(2012), 6 vom: Juni, Seite 634-641 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:57 year:2012 number:6 month:06 pages:634-641 https://doi.org/10.1134/S1064226912010019 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 AR 57 2012 6 06 634-641 |
| spelling |
10.1134/S1064226912010019 doi (DE-627)OLC2059679591 (DE-He213)S1064226912010019-p DE-627 ger DE-627 rakwb eng 620 VZ Alkeev, N. V. verfasserin aut Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2012 Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor Averin, S. V. aut Dorofeev, A. A. aut Gladysheva, N. B. aut Torgashin, M. Yu. aut Enthalten in Journal of communications technology and electronics SP MAIK Nauka/Interperiodica, 1993 57(2012), 6 vom: Juni, Seite 634-641 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:57 year:2012 number:6 month:06 pages:634-641 https://doi.org/10.1134/S1064226912010019 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 AR 57 2012 6 06 634-641 |
| allfields_unstemmed |
10.1134/S1064226912010019 doi (DE-627)OLC2059679591 (DE-He213)S1064226912010019-p DE-627 ger DE-627 rakwb eng 620 VZ Alkeev, N. V. verfasserin aut Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2012 Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor Averin, S. V. aut Dorofeev, A. A. aut Gladysheva, N. B. aut Torgashin, M. Yu. aut Enthalten in Journal of communications technology and electronics SP MAIK Nauka/Interperiodica, 1993 57(2012), 6 vom: Juni, Seite 634-641 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:57 year:2012 number:6 month:06 pages:634-641 https://doi.org/10.1134/S1064226912010019 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 AR 57 2012 6 06 634-641 |
| allfieldsGer |
10.1134/S1064226912010019 doi (DE-627)OLC2059679591 (DE-He213)S1064226912010019-p DE-627 ger DE-627 rakwb eng 620 VZ Alkeev, N. V. verfasserin aut Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2012 Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor Averin, S. V. aut Dorofeev, A. A. aut Gladysheva, N. B. aut Torgashin, M. Yu. aut Enthalten in Journal of communications technology and electronics SP MAIK Nauka/Interperiodica, 1993 57(2012), 6 vom: Juni, Seite 634-641 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:57 year:2012 number:6 month:06 pages:634-641 https://doi.org/10.1134/S1064226912010019 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 AR 57 2012 6 06 634-641 |
| allfieldsSound |
10.1134/S1064226912010019 doi (DE-627)OLC2059679591 (DE-He213)S1064226912010019-p DE-627 ger DE-627 rakwb eng 620 VZ Alkeev, N. V. verfasserin aut Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem 2012 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2012 Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor Averin, S. V. aut Dorofeev, A. A. aut Gladysheva, N. B. aut Torgashin, M. Yu. aut Enthalten in Journal of communications technology and electronics SP MAIK Nauka/Interperiodica, 1993 57(2012), 6 vom: Juni, Seite 634-641 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:57 year:2012 number:6 month:06 pages:634-641 https://doi.org/10.1134/S1064226912010019 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 AR 57 2012 6 06 634-641 |
| language |
English |
| source |
Enthalten in Journal of communications technology and electronics 57(2012), 6 vom: Juni, Seite 634-641 volume:57 year:2012 number:6 month:06 pages:634-641 |
| sourceStr |
Enthalten in Journal of communications technology and electronics 57(2012), 6 vom: Juni, Seite 634-641 volume:57 year:2012 number:6 month:06 pages:634-641 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor |
| dewey-raw |
620 |
| isfreeaccess_bool |
false |
| container_title |
Journal of communications technology and electronics |
| authorswithroles_txt_mv |
Alkeev, N. V. @@aut@@ Averin, S. V. @@aut@@ Dorofeev, A. A. @@aut@@ Gladysheva, N. B. @@aut@@ Torgashin, M. Yu. @@aut@@ |
| publishDateDaySort_date |
2012-06-01T00:00:00Z |
| hierarchy_top_id |
171168402 |
| dewey-sort |
3620 |
| id |
OLC2059679591 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2059679591</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230302133912.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2012 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1064226912010019</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2059679591</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1064226912010019-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Alkeev, N. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bias Voltage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Shot Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Factor Method</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise Generator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise Factor</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Averin, S. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dorofeev, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gladysheva, N. B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Torgashin, M. Yu.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of communications technology and electronics</subfield><subfield code="d">SP MAIK Nauka/Interperiodica, 1993</subfield><subfield code="g">57(2012), 6 vom: Juni, Seite 634-641</subfield><subfield code="w">(DE-627)171168402</subfield><subfield code="w">(DE-600)1160383-5</subfield><subfield code="w">(DE-576)038494272</subfield><subfield code="x">1064-2269</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:57</subfield><subfield code="g">year:2012</subfield><subfield code="g">number:6</subfield><subfield code="g">month:06</subfield><subfield code="g">pages:634-641</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1064226912010019</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">57</subfield><subfield code="j">2012</subfield><subfield code="e">6</subfield><subfield code="c">06</subfield><subfield code="h">634-641</subfield></datafield></record></collection>
|
| author |
Alkeev, N. V. |
| spellingShingle |
Alkeev, N. V. ddc 620 misc Bias Voltage misc Shot Noise misc Factor Method misc Noise Generator misc Noise Factor Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| authorStr |
Alkeev, N. V. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)171168402 |
| format |
Article |
| dewey-ones |
620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1064-2269 |
| topic_title |
620 VZ Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem Bias Voltage Shot Noise Factor Method Noise Generator Noise Factor |
| topic |
ddc 620 misc Bias Voltage misc Shot Noise misc Factor Method misc Noise Generator misc Noise Factor |
| topic_unstemmed |
ddc 620 misc Bias Voltage misc Shot Noise misc Factor Method misc Noise Generator misc Noise Factor |
| topic_browse |
ddc 620 misc Bias Voltage misc Shot Noise misc Factor Method misc Noise Generator misc Noise Factor |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of communications technology and electronics |
| hierarchy_parent_id |
171168402 |
| dewey-tens |
620 - Engineering |
| hierarchy_top_title |
Journal of communications technology and electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 |
| title |
Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| ctrlnum |
(DE-627)OLC2059679591 (DE-He213)S1064226912010019-p |
| title_full |
Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| author_sort |
Alkeev, N. V. |
| journal |
Journal of communications technology and electronics |
| journalStr |
Journal of communications technology and electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2012 |
| contenttype_str_mv |
txt |
| container_start_page |
634 |
| author_browse |
Alkeev, N. V. Averin, S. V. Dorofeev, A. A. Gladysheva, N. B. Torgashin, M. Yu. |
| container_volume |
57 |
| class |
620 VZ |
| format_se |
Aufsätze |
| author-letter |
Alkeev, N. V. |
| doi_str_mv |
10.1134/S1064226912010019 |
| dewey-full |
620 |
| title_sort |
shot noise of a high-speed resonance-tunneling diode based on the gaas/alas heterosystem |
| title_auth |
Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| abstract |
Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. © Pleiades Publishing, Ltd. 2012 |
| abstractGer |
Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. © Pleiades Publishing, Ltd. 2012 |
| abstract_unstemmed |
Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem. © Pleiades Publishing, Ltd. 2012 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_40 GBV_ILN_70 |
| container_issue |
6 |
| title_short |
Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem |
| url |
https://doi.org/10.1134/S1064226912010019 |
| remote_bool |
false |
| author2 |
Averin, S. V. Dorofeev, A. A. Gladysheva, N. B. Torgashin, M. Yu |
| author2Str |
Averin, S. V. Dorofeev, A. A. Gladysheva, N. B. Torgashin, M. Yu |
| ppnlink |
171168402 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1134/S1064226912010019 |
| up_date |
2024-07-03T23:01:36.204Z |
| _version_ |
1803600733095854080 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2059679591</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230302133912.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2012 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1064226912010019</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2059679591</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1064226912010019-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Alkeev, N. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Shot noise of a high-speed resonance-tunneling diode based on the GaAs/AlAs heterosystem</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A method for the measurement of the shot noise of semiconductor diodes at low temperatures and frequencies of no less than 100 MHz is proposed. The technique is based on the Y-factor method that is modified for the measurement in which the device under study is not matched with the measurement circuit. The shot noise of high-speed resonance-tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is analyzed. It is demonstrated that an increase in the bias voltage leads to an increase in the Fano factor from about 0.5 at low bias to values of greater than unity in the range of the negative differential conductance of the RTD. When the bias voltage further increases, the Fano factor decreases and becomes close to 0.5. At all of the temperatures and bias voltages, a reliable decrease in the Fano factor to a level of less than 0.5 is not observed. We assume the sequential rather than coherent electron transport for the RTD based on the GaAs/AlAs heterosystem.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bias Voltage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Shot Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Factor Method</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise Generator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise Factor</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Averin, S. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dorofeev, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gladysheva, N. B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Torgashin, M. Yu.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of communications technology and electronics</subfield><subfield code="d">SP MAIK Nauka/Interperiodica, 1993</subfield><subfield code="g">57(2012), 6 vom: Juni, Seite 634-641</subfield><subfield code="w">(DE-627)171168402</subfield><subfield code="w">(DE-600)1160383-5</subfield><subfield code="w">(DE-576)038494272</subfield><subfield code="x">1064-2269</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:57</subfield><subfield code="g">year:2012</subfield><subfield code="g">number:6</subfield><subfield code="g">month:06</subfield><subfield code="g">pages:634-641</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1064226912010019</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">57</subfield><subfield code="j">2012</subfield><subfield code="e">6</subfield><subfield code="c">06</subfield><subfield code="h">634-641</subfield></datafield></record></collection>
|
| score |
7.4019375 |