Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Burlakov, I. D. [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2017 |
|---|
| Schlagwörter: |
|---|
| Anmerkung: |
© Pleiades Publishing, Inc. 2017 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of communications technology and electronics - Pleiades Publishing, 1993, 62(2017), 3 vom: März, Seite 309-313 |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; year:2017 ; number:3 ; month:03 ; pages:309-313 |
| Links: |
|---|
| DOI / URN: |
10.1134/S1064226917030068 |
|---|
| Katalog-ID: |
OLC2059687888 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2059687888 | ||
| 003 | DE-627 | ||
| 005 | 20230302134441.0 | ||
| 007 | tu | ||
| 008 | 200819s2017 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1134/S1064226917030068 |2 doi | |
| 035 | |a (DE-627)OLC2059687888 | ||
| 035 | |a (DE-He213)S1064226917030068-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 620 |q VZ |
| 100 | 1 | |a Burlakov, I. D. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| 264 | 1 | |c 2017 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Pleiades Publishing, Inc. 2017 | ||
| 520 | |a Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. | ||
| 650 | 4 | |a focal plane array (FPA) | |
| 650 | 4 | |a epitaxial indium antimonide | |
| 650 | 4 | |a photoelectric characteristics | |
| 700 | 1 | |a Boltar, K. O. |4 aut | |
| 700 | 1 | |a Vlasov, P. V. |4 aut | |
| 700 | 1 | |a Lopukhin, A. A. |4 aut | |
| 700 | 1 | |a Toropov, A. I. |4 aut | |
| 700 | 1 | |a Zhuravlev, K. S. |4 aut | |
| 700 | 1 | |a Fadeev, V. V. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of communications technology and electronics |d Pleiades Publishing, 1993 |g 62(2017), 3 vom: März, Seite 309-313 |w (DE-627)171168402 |w (DE-600)1160383-5 |w (DE-576)038494272 |x 1064-2269 |7 nnns |
| 773 | 1 | 8 | |g volume:62 |g year:2017 |g number:3 |g month:03 |g pages:309-313 |
| 856 | 4 | 1 | |u https://doi.org/10.1134/S1064226917030068 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 62 |j 2017 |e 3 |c 03 |h 309-313 | ||
| author_variant |
i d b id idb k o b ko kob p v v pv pvv a a l aa aal a i t ai ait k s z ks ksz v v f vv vvf |
|---|---|
| matchkey_str |
article:10642269:2017----::hteeticaatrsisfoapaerasaeoeiailaesfnimnioie |
| hierarchy_sort_str |
2017 |
| publishDate |
2017 |
| allfields |
10.1134/S1064226917030068 doi (DE-627)OLC2059687888 (DE-He213)S1064226917030068-p DE-627 ger DE-627 rakwb eng 620 VZ Burlakov, I. D. verfasserin aut Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2017 Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics Boltar, K. O. aut Vlasov, P. V. aut Lopukhin, A. A. aut Toropov, A. I. aut Zhuravlev, K. S. aut Fadeev, V. V. aut Enthalten in Journal of communications technology and electronics Pleiades Publishing, 1993 62(2017), 3 vom: März, Seite 309-313 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:62 year:2017 number:3 month:03 pages:309-313 https://doi.org/10.1134/S1064226917030068 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 62 2017 3 03 309-313 |
| spelling |
10.1134/S1064226917030068 doi (DE-627)OLC2059687888 (DE-He213)S1064226917030068-p DE-627 ger DE-627 rakwb eng 620 VZ Burlakov, I. D. verfasserin aut Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2017 Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics Boltar, K. O. aut Vlasov, P. V. aut Lopukhin, A. A. aut Toropov, A. I. aut Zhuravlev, K. S. aut Fadeev, V. V. aut Enthalten in Journal of communications technology and electronics Pleiades Publishing, 1993 62(2017), 3 vom: März, Seite 309-313 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:62 year:2017 number:3 month:03 pages:309-313 https://doi.org/10.1134/S1064226917030068 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 62 2017 3 03 309-313 |
| allfields_unstemmed |
10.1134/S1064226917030068 doi (DE-627)OLC2059687888 (DE-He213)S1064226917030068-p DE-627 ger DE-627 rakwb eng 620 VZ Burlakov, I. D. verfasserin aut Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2017 Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics Boltar, K. O. aut Vlasov, P. V. aut Lopukhin, A. A. aut Toropov, A. I. aut Zhuravlev, K. S. aut Fadeev, V. V. aut Enthalten in Journal of communications technology and electronics Pleiades Publishing, 1993 62(2017), 3 vom: März, Seite 309-313 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:62 year:2017 number:3 month:03 pages:309-313 https://doi.org/10.1134/S1064226917030068 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 62 2017 3 03 309-313 |
| allfieldsGer |
10.1134/S1064226917030068 doi (DE-627)OLC2059687888 (DE-He213)S1064226917030068-p DE-627 ger DE-627 rakwb eng 620 VZ Burlakov, I. D. verfasserin aut Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2017 Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics Boltar, K. O. aut Vlasov, P. V. aut Lopukhin, A. A. aut Toropov, A. I. aut Zhuravlev, K. S. aut Fadeev, V. V. aut Enthalten in Journal of communications technology and electronics Pleiades Publishing, 1993 62(2017), 3 vom: März, Seite 309-313 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:62 year:2017 number:3 month:03 pages:309-313 https://doi.org/10.1134/S1064226917030068 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 62 2017 3 03 309-313 |
| allfieldsSound |
10.1134/S1064226917030068 doi (DE-627)OLC2059687888 (DE-He213)S1064226917030068-p DE-627 ger DE-627 rakwb eng 620 VZ Burlakov, I. D. verfasserin aut Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate 2017 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2017 Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics Boltar, K. O. aut Vlasov, P. V. aut Lopukhin, A. A. aut Toropov, A. I. aut Zhuravlev, K. S. aut Fadeev, V. V. aut Enthalten in Journal of communications technology and electronics Pleiades Publishing, 1993 62(2017), 3 vom: März, Seite 309-313 (DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 1064-2269 nnns volume:62 year:2017 number:3 month:03 pages:309-313 https://doi.org/10.1134/S1064226917030068 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 62 2017 3 03 309-313 |
| language |
English |
| source |
Enthalten in Journal of communications technology and electronics 62(2017), 3 vom: März, Seite 309-313 volume:62 year:2017 number:3 month:03 pages:309-313 |
| sourceStr |
Enthalten in Journal of communications technology and electronics 62(2017), 3 vom: März, Seite 309-313 volume:62 year:2017 number:3 month:03 pages:309-313 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics |
| dewey-raw |
620 |
| isfreeaccess_bool |
false |
| container_title |
Journal of communications technology and electronics |
| authorswithroles_txt_mv |
Burlakov, I. D. @@aut@@ Boltar, K. O. @@aut@@ Vlasov, P. V. @@aut@@ Lopukhin, A. A. @@aut@@ Toropov, A. I. @@aut@@ Zhuravlev, K. S. @@aut@@ Fadeev, V. V. @@aut@@ |
| publishDateDaySort_date |
2017-03-01T00:00:00Z |
| hierarchy_top_id |
171168402 |
| dewey-sort |
3620 |
| id |
OLC2059687888 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2059687888</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230302134441.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1064226917030068</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2059687888</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1064226917030068-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Burlakov, I. D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Inc. 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">focal plane array (FPA)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">epitaxial indium antimonide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoelectric characteristics</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Boltar, K. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vlasov, P. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lopukhin, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Toropov, A. I.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhuravlev, K. S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fadeev, V. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of communications technology and electronics</subfield><subfield code="d">Pleiades Publishing, 1993</subfield><subfield code="g">62(2017), 3 vom: März, Seite 309-313</subfield><subfield code="w">(DE-627)171168402</subfield><subfield code="w">(DE-600)1160383-5</subfield><subfield code="w">(DE-576)038494272</subfield><subfield code="x">1064-2269</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:3</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:309-313</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1064226917030068</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2017</subfield><subfield code="e">3</subfield><subfield code="c">03</subfield><subfield code="h">309-313</subfield></datafield></record></collection>
|
| author |
Burlakov, I. D. |
| spellingShingle |
Burlakov, I. D. ddc 620 misc focal plane array (FPA) misc epitaxial indium antimonide misc photoelectric characteristics Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| authorStr |
Burlakov, I. D. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)171168402 |
| format |
Article |
| dewey-ones |
620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1064-2269 |
| topic_title |
620 VZ Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate focal plane array (FPA) epitaxial indium antimonide photoelectric characteristics |
| topic |
ddc 620 misc focal plane array (FPA) misc epitaxial indium antimonide misc photoelectric characteristics |
| topic_unstemmed |
ddc 620 misc focal plane array (FPA) misc epitaxial indium antimonide misc photoelectric characteristics |
| topic_browse |
ddc 620 misc focal plane array (FPA) misc epitaxial indium antimonide misc photoelectric characteristics |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Journal of communications technology and electronics |
| hierarchy_parent_id |
171168402 |
| dewey-tens |
620 - Engineering |
| hierarchy_top_title |
Journal of communications technology and electronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)171168402 (DE-600)1160383-5 (DE-576)038494272 |
| title |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| ctrlnum |
(DE-627)OLC2059687888 (DE-He213)S1064226917030068-p |
| title_full |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| author_sort |
Burlakov, I. D. |
| journal |
Journal of communications technology and electronics |
| journalStr |
Journal of communications technology and electronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2017 |
| contenttype_str_mv |
txt |
| container_start_page |
309 |
| author_browse |
Burlakov, I. D. Boltar, K. O. Vlasov, P. V. Lopukhin, A. A. Toropov, A. I. Zhuravlev, K. S. Fadeev, V. V. |
| container_volume |
62 |
| class |
620 VZ |
| format_se |
Aufsätze |
| author-letter |
Burlakov, I. D. |
| doi_str_mv |
10.1134/S1064226917030068 |
| dewey-full |
620 |
| title_sort |
photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| title_auth |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| abstract |
Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. © Pleiades Publishing, Inc. 2017 |
| abstractGer |
Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. © Pleiades Publishing, Inc. 2017 |
| abstract_unstemmed |
Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb. © Pleiades Publishing, Inc. 2017 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 |
| container_issue |
3 |
| title_short |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
| url |
https://doi.org/10.1134/S1064226917030068 |
| remote_bool |
false |
| author2 |
Boltar, K. O. Vlasov, P. V. Lopukhin, A. A. Toropov, A. I. Zhuravlev, K. S. Fadeev, V. V. |
| author2Str |
Boltar, K. O. Vlasov, P. V. Lopukhin, A. A. Toropov, A. I. Zhuravlev, K. S. Fadeev, V. V. |
| ppnlink |
171168402 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1134/S1064226917030068 |
| up_date |
2024-07-03T23:03:09.380Z |
| _version_ |
1803600830801117184 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2059687888</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230302134441.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200819s2017 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1064226917030068</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2059687888</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1064226917030068-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Burlakov, I. D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Inc. 2017</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">focal plane array (FPA)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">epitaxial indium antimonide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photoelectric characteristics</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Boltar, K. O.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Vlasov, P. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lopukhin, A. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Toropov, A. I.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhuravlev, K. S.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fadeev, V. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of communications technology and electronics</subfield><subfield code="d">Pleiades Publishing, 1993</subfield><subfield code="g">62(2017), 3 vom: März, Seite 309-313</subfield><subfield code="w">(DE-627)171168402</subfield><subfield code="w">(DE-600)1160383-5</subfield><subfield code="w">(DE-576)038494272</subfield><subfield code="x">1064-2269</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:3</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:309-313</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1064226917030068</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2017</subfield><subfield code="e">3</subfield><subfield code="c">03</subfield><subfield code="h">309-313</subfield></datafield></record></collection>
|
| score |
7.399063 |