Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation
Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and t...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Hampikian, J. M. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1996 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 |
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| Übergeordnetes Werk: |
Enthalten in: Metallurgical and materials transactions / B - Springer-Verlag, 1994, 27(1996), 3 vom: Juni, Seite 491-500 |
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| Übergeordnetes Werk: |
volume:27 ; year:1996 ; number:3 ; month:06 ; pages:491-500 |
| Links: |
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| DOI / URN: |
10.1007/BF02914914 |
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| Katalog-ID: |
OLC2059754658 |
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| 245 | 1 | 0 | |a Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation |
| 264 | 1 | |c 1996 | |
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| 520 | |a Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. | ||
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| 650 | 4 | |a Material Transaction | |
| 650 | 4 | |a Niobium | |
| 650 | 4 | |a Tantalum | |
| 650 | 4 | |a Oxidation Resistance | |
| 700 | 1 | |a Saqib, M. |4 aut | |
| 700 | 1 | |a Potter, D. I. |4 aut | |
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10.1007/BF02914914 doi (DE-627)OLC2059754658 (DE-He213)BF02914914-p DE-627 ger DE-627 rakwb eng 620 660 VZ Hampikian, J. M. verfasserin aut Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. Vanadium Material Transaction Niobium Tantalum Oxidation Resistance Saqib, M. aut Potter, D. I. aut Enthalten in Metallurgical and materials transactions / B Springer-Verlag, 1994 27(1996), 3 vom: Juni, Seite 491-500 (DE-627)182203832 (DE-600)1186125-3 (DE-576)038889196 1073-5615 nnns volume:27 year:1996 number:3 month:06 pages:491-500 https://doi.org/10.1007/BF02914914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_30 GBV_ILN_62 GBV_ILN_70 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 AR 27 1996 3 06 491-500 |
| spelling |
10.1007/BF02914914 doi (DE-627)OLC2059754658 (DE-He213)BF02914914-p DE-627 ger DE-627 rakwb eng 620 660 VZ Hampikian, J. M. verfasserin aut Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. Vanadium Material Transaction Niobium Tantalum Oxidation Resistance Saqib, M. aut Potter, D. I. aut Enthalten in Metallurgical and materials transactions / B Springer-Verlag, 1994 27(1996), 3 vom: Juni, Seite 491-500 (DE-627)182203832 (DE-600)1186125-3 (DE-576)038889196 1073-5615 nnns volume:27 year:1996 number:3 month:06 pages:491-500 https://doi.org/10.1007/BF02914914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_30 GBV_ILN_62 GBV_ILN_70 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 AR 27 1996 3 06 491-500 |
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10.1007/BF02914914 doi (DE-627)OLC2059754658 (DE-He213)BF02914914-p DE-627 ger DE-627 rakwb eng 620 660 VZ Hampikian, J. M. verfasserin aut Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. Vanadium Material Transaction Niobium Tantalum Oxidation Resistance Saqib, M. aut Potter, D. I. aut Enthalten in Metallurgical and materials transactions / B Springer-Verlag, 1994 27(1996), 3 vom: Juni, Seite 491-500 (DE-627)182203832 (DE-600)1186125-3 (DE-576)038889196 1073-5615 nnns volume:27 year:1996 number:3 month:06 pages:491-500 https://doi.org/10.1007/BF02914914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_30 GBV_ILN_62 GBV_ILN_70 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 AR 27 1996 3 06 491-500 |
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10.1007/BF02914914 doi (DE-627)OLC2059754658 (DE-He213)BF02914914-p DE-627 ger DE-627 rakwb eng 620 660 VZ Hampikian, J. M. verfasserin aut Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. Vanadium Material Transaction Niobium Tantalum Oxidation Resistance Saqib, M. aut Potter, D. I. aut Enthalten in Metallurgical and materials transactions / B Springer-Verlag, 1994 27(1996), 3 vom: Juni, Seite 491-500 (DE-627)182203832 (DE-600)1186125-3 (DE-576)038889196 1073-5615 nnns volume:27 year:1996 number:3 month:06 pages:491-500 https://doi.org/10.1007/BF02914914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_30 GBV_ILN_62 GBV_ILN_70 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 AR 27 1996 3 06 491-500 |
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10.1007/BF02914914 doi (DE-627)OLC2059754658 (DE-He213)BF02914914-p DE-627 ger DE-627 rakwb eng 620 660 VZ Hampikian, J. M. verfasserin aut Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation 1996 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. Vanadium Material Transaction Niobium Tantalum Oxidation Resistance Saqib, M. aut Potter, D. I. aut Enthalten in Metallurgical and materials transactions / B Springer-Verlag, 1994 27(1996), 3 vom: Juni, Seite 491-500 (DE-627)182203832 (DE-600)1186125-3 (DE-576)038889196 1073-5615 nnns volume:27 year:1996 number:3 month:06 pages:491-500 https://doi.org/10.1007/BF02914914 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_11 GBV_ILN_20 GBV_ILN_30 GBV_ILN_62 GBV_ILN_70 GBV_ILN_2027 GBV_ILN_4046 GBV_ILN_4307 GBV_ILN_4319 GBV_ILN_4323 AR 27 1996 3 06 491-500 |
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Enthalten in Metallurgical and materials transactions / B 27(1996), 3 vom: Juni, Seite 491-500 volume:27 year:1996 number:3 month:06 pages:491-500 |
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improved oxidation resistance of group vb refractory metals by $ al^{+} $ ion implantation |
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Improved oxidation resistance of group VB refractory metals by $ Al^{+} $ ion implantation |
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Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 |
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Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 |
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Abstract Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium when exposed at 500 °C to air. The oxidative weight gains of implanted niobium and tantalum proved negligible when measured at 500 °C and for times sufficient to fully convert the untreated metals to their pentoxides. At 735 °C, implantation of vanadium only slightly retarded its oxidation, while oxidative weight gains of niobium and tantalum were reduced by factors of 3 or more. Implanted niobium exhibited weight gain in direct proportion to oxidation time squared at 735 °C. Microstructural examination of the metals implanted with selected fluences of the 180 kV aluminum ions showed the following. The solubility limit of aluminum is extended by implantation, the body centered cubic (bcc) phases being retained to ∼60 at. pct Al in all three metals. The highest fluence investigated, 2.4 × $ 10^{22} $ ions/$ m^{2} $, produced an ∼400-nm layer of $ VAl_{3} $ beneath the surface of vanadium, and ∼300-nm layers of an amorphous phase containing ∼70 at. pct Al beneath the niobium and tantalum surfaces. All three metals, implanted to this fluence and annealed at 600 °C, contained tri-aluminides, intermetallic compounds known for their oxidation resistances. Specimens implanted to this fluence were thus selected for the oxidation measurements. © The Minerals, Metals & Materials Society - ASM International - The Materials Information Society 1996 |
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