Growth and Characterization of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ Thin Films on Single-Crystal Yttria-Doped Zirconia
Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Roy, Sudesna [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2013 |
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| Übergeordnetes Werk: |
Enthalten in: JOM - Springer US, 1989, 65(2013), 4 vom: 15. Feb., Seite 557-561 |
|---|---|
| Übergeordnetes Werk: |
volume:65 ; year:2013 ; number:4 ; day:15 ; month:02 ; pages:557-561 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11837-013-0552-0 |
|---|
| Katalog-ID: |
OLC2059917743 |
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| 520 | |a Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. | ||
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| 700 | 1 | |a Sarin, Vinod |4 aut | |
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10.1007/s11837-013-0552-0 doi (DE-627)OLC2059917743 (DE-He213)s11837-013-0552-0-p DE-627 ger DE-627 rakwb eng 670 VZ 19,1 ssgn Roy, Sudesna verfasserin aut Growth and Characterization of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ Thin Films on Single-Crystal Yttria-Doped Zirconia 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. Substrate Temperature Prefer Orientation Physical Vapor Deposition Lu2O3 Physical Vapor Deposition Technique Topping, Stephen aut Sarin, Vinod aut Enthalten in JOM Springer US, 1989 65(2013), 4 vom: 15. Feb., Seite 557-561 (DE-627)130823368 (DE-600)1015034-1 (DE-576)023064358 0148-6608 nnns volume:65 year:2013 number:4 day:15 month:02 pages:557-561 https://doi.org/10.1007/s11837-013-0552-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2015 GBV_ILN_2027 AR 65 2013 4 15 02 557-561 |
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10.1007/s11837-013-0552-0 doi (DE-627)OLC2059917743 (DE-He213)s11837-013-0552-0-p DE-627 ger DE-627 rakwb eng 670 VZ 19,1 ssgn Roy, Sudesna verfasserin aut Growth and Characterization of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ Thin Films on Single-Crystal Yttria-Doped Zirconia 2013 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © TMS 2013 Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. Substrate Temperature Prefer Orientation Physical Vapor Deposition Lu2O3 Physical Vapor Deposition Technique Topping, Stephen aut Sarin, Vinod aut Enthalten in JOM Springer US, 1989 65(2013), 4 vom: 15. Feb., Seite 557-561 (DE-627)130823368 (DE-600)1015034-1 (DE-576)023064358 0148-6608 nnns volume:65 year:2013 number:4 day:15 month:02 pages:557-561 https://doi.org/10.1007/s11837-013-0552-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_20 GBV_ILN_30 GBV_ILN_70 GBV_ILN_2015 GBV_ILN_2027 AR 65 2013 4 15 02 557-561 |
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Roy, Sudesna |
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670 |
| title_sort |
growth and characterization of $ lu_{2} $$ o_{3} $:$ eu^{3+} $ thin films on single-crystal yttria-doped zirconia |
| title_auth |
Growth and Characterization of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ Thin Films on Single-Crystal Yttria-Doped Zirconia |
| abstract |
Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. © TMS 2013 |
| abstractGer |
Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. © TMS 2013 |
| abstract_unstemmed |
Abstract $ Lu_{2} $$ O_{3} $ doped with $ Eu^{3+} $ has been established as an excellent scintillator material for numerous applications such as lasers, optical lenses, and radiography. The material is typically manufactured via hot pressing. This process, apart from being prohibitively expensive, can also introduce major structural defects because it requires grinding/polishing to achieve high transparency and spatial resolution. To overcome these process limitations that have restricted the commercial viability of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ scintillators, a technique to deposit thin films (1–10 μm) of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ has been developed. This investigation characterized the growth of such thin films by radio frequency (RF) magnetron sputtering on single-crystal cubic yttria doped zirconia (YSZ) substrates. At a deposition rate of 3.3 Å/s, the effects of substrate heating and orientation on coating structure property and the resultant effect on performance were evaluated. Additionally, the effect of deposition parameters and growth conditions on the radioluminescence of the coatings, excited by x-rays, was systematically examined. © TMS 2013 |
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| title_short |
Growth and Characterization of $ Lu_{2} $$ O_{3} $:$ Eu^{3+} $ Thin Films on Single-Crystal Yttria-Doped Zirconia |
| url |
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Topping, Stephen Sarin, Vinod |
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