Specific features of the bulk etching of single-crystal semiconducting silicon in aqueous KOH solutions
Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Baranov, I. L. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2010 |
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| Übergeordnetes Werk: |
Enthalten in: Russian journal of applied chemistry - SP MAIK Nauka/Interperiodica, 1993, 83(2010), 6 vom: Juni, Seite 978-983 |
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| Übergeordnetes Werk: |
volume:83 ; year:2010 ; number:6 ; month:06 ; pages:978-983 |
| Links: |
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| DOI / URN: |
10.1134/S1070427210060091 |
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OLC2063633835 |
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| 520 | |a Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. | ||
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10.1134/S1070427210060091 doi (DE-627)OLC2063633835 (DE-He213)S1070427210060091-p DE-627 ger DE-627 rakwb eng 540 VZ Baranov, I. L. verfasserin aut Specific features of the bulk etching of single-crystal semiconducting silicon in aqueous KOH solutions 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. Etching Rate Potassium Ferricyanide Aqueous Alkaline Solution Silicon Etching Alkaline Component Tabulina, L. B. aut Stanovaya, L. V. aut Rusal’skaya, T. G. aut Enthalten in Russian journal of applied chemistry SP MAIK Nauka/Interperiodica, 1993 83(2010), 6 vom: Juni, Seite 978-983 (DE-627)181999927 (DE-600)1181520-6 (DE-576)038881543 1070-4272 nnns volume:83 year:2010 number:6 month:06 pages:978-983 https://doi.org/10.1134/S1070427210060091 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 83 2010 6 06 978-983 |
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10.1134/S1070427210060091 doi (DE-627)OLC2063633835 (DE-He213)S1070427210060091-p DE-627 ger DE-627 rakwb eng 540 VZ Baranov, I. L. verfasserin aut Specific features of the bulk etching of single-crystal semiconducting silicon in aqueous KOH solutions 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. Etching Rate Potassium Ferricyanide Aqueous Alkaline Solution Silicon Etching Alkaline Component Tabulina, L. B. aut Stanovaya, L. V. aut Rusal’skaya, T. G. aut Enthalten in Russian journal of applied chemistry SP MAIK Nauka/Interperiodica, 1993 83(2010), 6 vom: Juni, Seite 978-983 (DE-627)181999927 (DE-600)1181520-6 (DE-576)038881543 1070-4272 nnns volume:83 year:2010 number:6 month:06 pages:978-983 https://doi.org/10.1134/S1070427210060091 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 83 2010 6 06 978-983 |
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10.1134/S1070427210060091 doi (DE-627)OLC2063633835 (DE-He213)S1070427210060091-p DE-627 ger DE-627 rakwb eng 540 VZ Baranov, I. L. verfasserin aut Specific features of the bulk etching of single-crystal semiconducting silicon in aqueous KOH solutions 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. Etching Rate Potassium Ferricyanide Aqueous Alkaline Solution Silicon Etching Alkaline Component Tabulina, L. B. aut Stanovaya, L. V. aut Rusal’skaya, T. G. aut Enthalten in Russian journal of applied chemistry SP MAIK Nauka/Interperiodica, 1993 83(2010), 6 vom: Juni, Seite 978-983 (DE-627)181999927 (DE-600)1181520-6 (DE-576)038881543 1070-4272 nnns volume:83 year:2010 number:6 month:06 pages:978-983 https://doi.org/10.1134/S1070427210060091 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 83 2010 6 06 978-983 |
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Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. © Pleiades Publishing, Ltd. 2010 |
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Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. © Pleiades Publishing, Ltd. 2010 |
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Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed. © Pleiades Publishing, Ltd. 2010 |
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L.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Specific features of the bulk etching of single-crystal semiconducting silicon in aqueous KOH solutions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2010</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Bulk chemical etching of single-crystal semiconducting silicon in aqueous alkaline solutions of KOH was studied at various solution temperatures, alkaline component concentrations, and microscopic amounts of a potassium ferricyanide additive. Specific effects of these factors on the process of silicon etching are explained by comparing the corresponding activation energies. The possibility of using alkaline aqueous solutions of KOH with a potassium ferricyanide additive for fabrication of elements in microsystem technology devices is assessed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Etching Rate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Potassium Ferricyanide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Aqueous Alkaline Solution</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon Etching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Alkaline Component</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tabulina, L. 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