Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology
Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor.
Gespeichert in:
| Autor*in: |
Vasilyev, V. Yu. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2010 |
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| Übergeordnetes Werk: |
Enthalten in: Russian microelectronics - SP MAIK Nauka/Interperiodica, 1992, 39(2010), 1 vom: Jan., Seite 26-33 |
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| Übergeordnetes Werk: |
volume:39 ; year:2010 ; number:1 ; month:01 ; pages:26-33 |
| Links: |
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| DOI / URN: |
10.1134/S106373971001004X |
|---|
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10.1134/S106373971001004X doi (DE-627)OLC2067573128 (DE-He213)S106373971001004X-p DE-627 ger DE-627 rakwb eng 620 VZ Vasilyev, V. Yu. verfasserin aut Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. Ruthenium Atomic Layer Deposition RUSSIAN Microelectronics Deposition Chamber Chemical Vapor Deposition Process Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 39(2010), 1 vom: Jan., Seite 26-33 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:39 year:2010 number:1 month:01 pages:26-33 https://doi.org/10.1134/S106373971001004X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 39 2010 1 01 26-33 |
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10.1134/S106373971001004X doi (DE-627)OLC2067573128 (DE-He213)S106373971001004X-p DE-627 ger DE-627 rakwb eng 620 VZ Vasilyev, V. Yu. verfasserin aut Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. Ruthenium Atomic Layer Deposition RUSSIAN Microelectronics Deposition Chamber Chemical Vapor Deposition Process Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 39(2010), 1 vom: Jan., Seite 26-33 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:39 year:2010 number:1 month:01 pages:26-33 https://doi.org/10.1134/S106373971001004X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 39 2010 1 01 26-33 |
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10.1134/S106373971001004X doi (DE-627)OLC2067573128 (DE-He213)S106373971001004X-p DE-627 ger DE-627 rakwb eng 620 VZ Vasilyev, V. Yu. verfasserin aut Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. Ruthenium Atomic Layer Deposition RUSSIAN Microelectronics Deposition Chamber Chemical Vapor Deposition Process Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 39(2010), 1 vom: Jan., Seite 26-33 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:39 year:2010 number:1 month:01 pages:26-33 https://doi.org/10.1134/S106373971001004X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 39 2010 1 01 26-33 |
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10.1134/S106373971001004X doi (DE-627)OLC2067573128 (DE-He213)S106373971001004X-p DE-627 ger DE-627 rakwb eng 620 VZ Vasilyev, V. Yu. verfasserin aut Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology 2010 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2010 Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. Ruthenium Atomic Layer Deposition RUSSIAN Microelectronics Deposition Chamber Chemical Vapor Deposition Process Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 39(2010), 1 vom: Jan., Seite 26-33 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:39 year:2010 number:1 month:01 pages:26-33 https://doi.org/10.1134/S106373971001004X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 AR 39 2010 1 01 26-33 |
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Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology |
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Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. © Pleiades Publishing, Ltd. 2010 |
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Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. © Pleiades Publishing, Ltd. 2010 |
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Abstract An overview is presented of the low-temperature pulsed CVD equipment and techniques used in these experiments for making ruthenium thin films with Ru(CO)3($ C_{6} $$ H_{8} $) as the first precursor and $ NH_{3} $, $ H_{2} $, or $ N_{2} $O as the second precursor. © Pleiades Publishing, Ltd. 2010 |
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