The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon
Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The proces...
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| Autor*in: |
Enisherlova, K. L. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Russian microelectronics - SP MAIK Nauka/Interperiodica, 1992, 40(2011), 8 vom: Dez., Seite 641-648 |
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| Übergeordnetes Werk: |
volume:40 ; year:2011 ; number:8 ; month:12 ; pages:641-648 |
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| DOI / URN: |
10.1134/S1063739711080075 |
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OLC2067574167 |
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| 520 | |a Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. | ||
| 650 | 4 | |a oxygen solid solution in silicon | |
| 650 | 4 | |a decomposition | |
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| 700 | 1 | |a Bublik, V. T. |4 aut | |
| 700 | 1 | |a Shcherbachev, K. D. |4 aut | |
| 700 | 1 | |a Voronova, M. I. |4 aut | |
| 700 | 1 | |a Temper, E. M. |4 aut | |
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10.1134/S1063739711080075 doi (DE-627)OLC2067574167 (DE-He213)S1063739711080075-p DE-627 ger DE-627 rakwb eng 620 VZ Enisherlova, K. L. verfasserin aut The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. oxygen solid solution in silicon decomposition microdefects radiation thermal neutrons thermal treatment Bublik, V. T. aut Shcherbachev, K. D. aut Voronova, M. I. aut Temper, E. M. aut Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 40(2011), 8 vom: Dez., Seite 641-648 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:40 year:2011 number:8 month:12 pages:641-648 https://doi.org/10.1134/S1063739711080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 40 2011 8 12 641-648 |
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10.1134/S1063739711080075 doi (DE-627)OLC2067574167 (DE-He213)S1063739711080075-p DE-627 ger DE-627 rakwb eng 620 VZ Enisherlova, K. L. verfasserin aut The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. oxygen solid solution in silicon decomposition microdefects radiation thermal neutrons thermal treatment Bublik, V. T. aut Shcherbachev, K. D. aut Voronova, M. I. aut Temper, E. M. aut Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 40(2011), 8 vom: Dez., Seite 641-648 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:40 year:2011 number:8 month:12 pages:641-648 https://doi.org/10.1134/S1063739711080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 40 2011 8 12 641-648 |
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10.1134/S1063739711080075 doi (DE-627)OLC2067574167 (DE-He213)S1063739711080075-p DE-627 ger DE-627 rakwb eng 620 VZ Enisherlova, K. L. verfasserin aut The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. oxygen solid solution in silicon decomposition microdefects radiation thermal neutrons thermal treatment Bublik, V. T. aut Shcherbachev, K. D. aut Voronova, M. I. aut Temper, E. M. aut Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 40(2011), 8 vom: Dez., Seite 641-648 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:40 year:2011 number:8 month:12 pages:641-648 https://doi.org/10.1134/S1063739711080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 40 2011 8 12 641-648 |
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10.1134/S1063739711080075 doi (DE-627)OLC2067574167 (DE-He213)S1063739711080075-p DE-627 ger DE-627 rakwb eng 620 VZ Enisherlova, K. L. verfasserin aut The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. oxygen solid solution in silicon decomposition microdefects radiation thermal neutrons thermal treatment Bublik, V. T. aut Shcherbachev, K. D. aut Voronova, M. I. aut Temper, E. M. aut Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 40(2011), 8 vom: Dez., Seite 641-648 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:40 year:2011 number:8 month:12 pages:641-648 https://doi.org/10.1134/S1063739711080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 40 2011 8 12 641-648 |
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10.1134/S1063739711080075 doi (DE-627)OLC2067574167 (DE-He213)S1063739711080075-p DE-627 ger DE-627 rakwb eng 620 VZ Enisherlova, K. L. verfasserin aut The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon 2011 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. oxygen solid solution in silicon decomposition microdefects radiation thermal neutrons thermal treatment Bublik, V. T. aut Shcherbachev, K. D. aut Voronova, M. I. aut Temper, E. M. aut Enthalten in Russian microelectronics SP MAIK Nauka/Interperiodica, 1992 40(2011), 8 vom: Dez., Seite 641-648 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:40 year:2011 number:8 month:12 pages:641-648 https://doi.org/10.1134/S1063739711080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 40 2011 8 12 641-648 |
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The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon |
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Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. © Pleiades Publishing, Ltd. 2011 |
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Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. © Pleiades Publishing, Ltd. 2011 |
| abstract_unstemmed |
Abstract This paper presents the analysis of peculiarities of defect formation in the course of thermal treatment in silicon single crystals grown by the Czochralski method and exposed to thermal-neutron radiation, under the modes usually applied in transmutation doping of silicon ingots. The processes of defect formation were estimated using X-ray diffuse scattering and IR-spectroscopy. It is demonstrated that such doping results in the variation of the state in the material lattice of impurities such as oxygen and carbon. Moreover, subsequent high-temperature annealing leads to the recovery of concentration of interstitial oxygen and does not result in the recovery of the carbon concentration in the lattice nodes. The effect is studied of radiation on peculiar features of the formation of oxygen-containing microdefects in a silicon lattice at high-temperature annealing, used for the formation of an internal getter in silicon wafers. © Pleiades Publishing, Ltd. 2011 |
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Bublik, V. T. Shcherbachev, K. D. Voronova, M. I. Temper, E. M. |
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Bublik, V. T. Shcherbachev, K. D. Voronova, M. I. Temper, E. M. |
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10.1134/S1063739711080075 |
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