An analysis of the temperature effect on the impulse electric strength of CMOS chips
Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Epifantsev, K. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Russian microelectronics - Pleiades Publishing, 1992, 44(2015), 1 vom: Jan., Seite 40-43 |
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| Übergeordnetes Werk: |
volume:44 ; year:2015 ; number:1 ; month:01 ; pages:40-43 |
| Links: |
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| DOI / URN: |
10.1134/S1063739715010059 |
|---|
| Katalog-ID: |
OLC2067576658 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | OLC2067576658 | ||
| 003 | DE-627 | ||
| 005 | 20230504035219.0 | ||
| 007 | tu | ||
| 008 | 200820s2015 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1134/S1063739715010059 |2 doi | |
| 035 | |a (DE-627)OLC2067576658 | ||
| 035 | |a (DE-He213)S1063739715010059-p | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 620 |q VZ |
| 100 | 1 | |a Epifantsev, K. A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| 264 | 1 | |c 2015 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 500 | |a © Pleiades Publishing, Ltd. 2015 | ||
| 520 | |a Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. | ||
| 650 | 4 | |a Voltage Pulse | |
| 650 | 4 | |a Pulse Amplitude | |
| 650 | 4 | |a RUSSIAN Microelectronics | |
| 650 | 4 | |a Speci Mens | |
| 650 | 4 | |a CMOS Chip | |
| 700 | 1 | |a Skorobogatov, P. K. |4 aut | |
| 700 | 1 | |a Gerasimchuk, O. A. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Russian microelectronics |d Pleiades Publishing, 1992 |g 44(2015), 1 vom: Jan., Seite 40-43 |w (DE-627)131158309 |w (DE-600)1133385-6 |w (DE-576)285629654 |x 1063-7397 |7 nnns |
| 773 | 1 | 8 | |g volume:44 |g year:2015 |g number:1 |g month:01 |g pages:40-43 |
| 856 | 4 | 1 | |u https://doi.org/10.1134/S1063739715010059 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a GBV_ILN_70 | ||
| 951 | |a AR | ||
| 952 | |d 44 |j 2015 |e 1 |c 01 |h 40-43 | ||
| author_variant |
k a e ka kae p k s pk pks o a g oa oag |
|---|---|
| matchkey_str |
article:10637397:2015----::nnlssfhtmeauefetnhiplelcr |
| hierarchy_sort_str |
2015 |
| publishDate |
2015 |
| allfields |
10.1134/S1063739715010059 doi (DE-627)OLC2067576658 (DE-He213)S1063739715010059-p DE-627 ger DE-627 rakwb eng 620 VZ Epifantsev, K. A. verfasserin aut An analysis of the temperature effect on the impulse electric strength of CMOS chips 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2015 Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip Skorobogatov, P. K. aut Gerasimchuk, O. A. aut Enthalten in Russian microelectronics Pleiades Publishing, 1992 44(2015), 1 vom: Jan., Seite 40-43 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:44 year:2015 number:1 month:01 pages:40-43 https://doi.org/10.1134/S1063739715010059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 44 2015 1 01 40-43 |
| spelling |
10.1134/S1063739715010059 doi (DE-627)OLC2067576658 (DE-He213)S1063739715010059-p DE-627 ger DE-627 rakwb eng 620 VZ Epifantsev, K. A. verfasserin aut An analysis of the temperature effect on the impulse electric strength of CMOS chips 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2015 Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip Skorobogatov, P. K. aut Gerasimchuk, O. A. aut Enthalten in Russian microelectronics Pleiades Publishing, 1992 44(2015), 1 vom: Jan., Seite 40-43 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:44 year:2015 number:1 month:01 pages:40-43 https://doi.org/10.1134/S1063739715010059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 44 2015 1 01 40-43 |
| allfields_unstemmed |
10.1134/S1063739715010059 doi (DE-627)OLC2067576658 (DE-He213)S1063739715010059-p DE-627 ger DE-627 rakwb eng 620 VZ Epifantsev, K. A. verfasserin aut An analysis of the temperature effect on the impulse electric strength of CMOS chips 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2015 Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip Skorobogatov, P. K. aut Gerasimchuk, O. A. aut Enthalten in Russian microelectronics Pleiades Publishing, 1992 44(2015), 1 vom: Jan., Seite 40-43 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:44 year:2015 number:1 month:01 pages:40-43 https://doi.org/10.1134/S1063739715010059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 44 2015 1 01 40-43 |
| allfieldsGer |
10.1134/S1063739715010059 doi (DE-627)OLC2067576658 (DE-He213)S1063739715010059-p DE-627 ger DE-627 rakwb eng 620 VZ Epifantsev, K. A. verfasserin aut An analysis of the temperature effect on the impulse electric strength of CMOS chips 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2015 Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip Skorobogatov, P. K. aut Gerasimchuk, O. A. aut Enthalten in Russian microelectronics Pleiades Publishing, 1992 44(2015), 1 vom: Jan., Seite 40-43 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:44 year:2015 number:1 month:01 pages:40-43 https://doi.org/10.1134/S1063739715010059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 44 2015 1 01 40-43 |
| allfieldsSound |
10.1134/S1063739715010059 doi (DE-627)OLC2067576658 (DE-He213)S1063739715010059-p DE-627 ger DE-627 rakwb eng 620 VZ Epifantsev, K. A. verfasserin aut An analysis of the temperature effect on the impulse electric strength of CMOS chips 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2015 Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip Skorobogatov, P. K. aut Gerasimchuk, O. A. aut Enthalten in Russian microelectronics Pleiades Publishing, 1992 44(2015), 1 vom: Jan., Seite 40-43 (DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 1063-7397 nnns volume:44 year:2015 number:1 month:01 pages:40-43 https://doi.org/10.1134/S1063739715010059 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 AR 44 2015 1 01 40-43 |
| language |
English |
| source |
Enthalten in Russian microelectronics 44(2015), 1 vom: Jan., Seite 40-43 volume:44 year:2015 number:1 month:01 pages:40-43 |
| sourceStr |
Enthalten in Russian microelectronics 44(2015), 1 vom: Jan., Seite 40-43 volume:44 year:2015 number:1 month:01 pages:40-43 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip |
| dewey-raw |
620 |
| isfreeaccess_bool |
false |
| container_title |
Russian microelectronics |
| authorswithroles_txt_mv |
Epifantsev, K. A. @@aut@@ Skorobogatov, P. K. @@aut@@ Gerasimchuk, O. A. @@aut@@ |
| publishDateDaySort_date |
2015-01-01T00:00:00Z |
| hierarchy_top_id |
131158309 |
| dewey-sort |
3620 |
| id |
OLC2067576658 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2067576658</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504035219.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1063739715010059</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2067576658</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1063739715010059-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Epifantsev, K. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">An analysis of the temperature effect on the impulse electric strength of CMOS chips</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Voltage Pulse</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Pulse Amplitude</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RUSSIAN Microelectronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Speci Mens</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS Chip</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Skorobogatov, P. K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerasimchuk, O. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian microelectronics</subfield><subfield code="d">Pleiades Publishing, 1992</subfield><subfield code="g">44(2015), 1 vom: Jan., Seite 40-43</subfield><subfield code="w">(DE-627)131158309</subfield><subfield code="w">(DE-600)1133385-6</subfield><subfield code="w">(DE-576)285629654</subfield><subfield code="x">1063-7397</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:44</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:40-43</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1063739715010059</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">44</subfield><subfield code="j">2015</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">40-43</subfield></datafield></record></collection>
|
| author |
Epifantsev, K. A. |
| spellingShingle |
Epifantsev, K. A. ddc 620 misc Voltage Pulse misc Pulse Amplitude misc RUSSIAN Microelectronics misc Speci Mens misc CMOS Chip An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| authorStr |
Epifantsev, K. A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)131158309 |
| format |
Article |
| dewey-ones |
620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut aut aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1063-7397 |
| topic_title |
620 VZ An analysis of the temperature effect on the impulse electric strength of CMOS chips Voltage Pulse Pulse Amplitude RUSSIAN Microelectronics Speci Mens CMOS Chip |
| topic |
ddc 620 misc Voltage Pulse misc Pulse Amplitude misc RUSSIAN Microelectronics misc Speci Mens misc CMOS Chip |
| topic_unstemmed |
ddc 620 misc Voltage Pulse misc Pulse Amplitude misc RUSSIAN Microelectronics misc Speci Mens misc CMOS Chip |
| topic_browse |
ddc 620 misc Voltage Pulse misc Pulse Amplitude misc RUSSIAN Microelectronics misc Speci Mens misc CMOS Chip |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| hierarchy_parent_title |
Russian microelectronics |
| hierarchy_parent_id |
131158309 |
| dewey-tens |
620 - Engineering |
| hierarchy_top_title |
Russian microelectronics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)131158309 (DE-600)1133385-6 (DE-576)285629654 |
| title |
An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| ctrlnum |
(DE-627)OLC2067576658 (DE-He213)S1063739715010059-p |
| title_full |
An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| author_sort |
Epifantsev, K. A. |
| journal |
Russian microelectronics |
| journalStr |
Russian microelectronics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2015 |
| contenttype_str_mv |
txt |
| container_start_page |
40 |
| author_browse |
Epifantsev, K. A. Skorobogatov, P. K. Gerasimchuk, O. A. |
| container_volume |
44 |
| class |
620 VZ |
| format_se |
Aufsätze |
| author-letter |
Epifantsev, K. A. |
| doi_str_mv |
10.1134/S1063739715010059 |
| dewey-full |
620 |
| title_sort |
an analysis of the temperature effect on the impulse electric strength of cmos chips |
| title_auth |
An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| abstract |
Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. © Pleiades Publishing, Ltd. 2015 |
| abstractGer |
Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. © Pleiades Publishing, Ltd. 2015 |
| abstract_unstemmed |
Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model. © Pleiades Publishing, Ltd. 2015 |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 |
| container_issue |
1 |
| title_short |
An analysis of the temperature effect on the impulse electric strength of CMOS chips |
| url |
https://doi.org/10.1134/S1063739715010059 |
| remote_bool |
false |
| author2 |
Skorobogatov, P. K. Gerasimchuk, O. A. |
| author2Str |
Skorobogatov, P. K. Gerasimchuk, O. A. |
| ppnlink |
131158309 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1134/S1063739715010059 |
| up_date |
2024-07-03T15:37:00.538Z |
| _version_ |
1803572761632702464 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2067576658</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504035219.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1063739715010059</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2067576658</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1063739715010059-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Epifantsev, K. A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">An analysis of the temperature effect on the impulse electric strength of CMOS chips</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The results of the experimental studies of CD4001BCN-NL CMOS chips on the impulse electric strength (IES) at two ambient temperatures (+25°C and +125°C) are given. The analysis of the obtained results showed that the ambient temperature effects on the impulse electric strength indices of the studied chip. The value and behavior of the IES can be described by the p-n-junction thermal damage model.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Voltage Pulse</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Pulse Amplitude</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RUSSIAN Microelectronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Speci Mens</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS Chip</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Skorobogatov, P. K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerasimchuk, O. A.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Russian microelectronics</subfield><subfield code="d">Pleiades Publishing, 1992</subfield><subfield code="g">44(2015), 1 vom: Jan., Seite 40-43</subfield><subfield code="w">(DE-627)131158309</subfield><subfield code="w">(DE-600)1133385-6</subfield><subfield code="w">(DE-576)285629654</subfield><subfield code="x">1063-7397</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:44</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:40-43</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1063739715010059</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">44</subfield><subfield code="j">2015</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">40-43</subfield></datafield></record></collection>
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