Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron
Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0]...
Ausführliche Beschreibung
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| Autor*in: |
Piskunov, N. A. [verfasserIn] |
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Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Anmerkung: |
© Pleiades Publishing, Inc. 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Crystallography reports - Nauka/Interperiodica, 1993, 52(2007), 4 vom: Juli, Seite 686-690 |
|---|---|
| Übergeordnetes Werk: |
volume:52 ; year:2007 ; number:4 ; month:07 ; pages:686-690 |
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| DOI / URN: |
10.1134/S1063774507040165 |
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| 520 | |a Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. | ||
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| 700 | 1 | |a Kashkarov, P. K. |4 aut | |
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10.1134/S1063774507040165 doi (DE-627)OLC2070251179 (DE-He213)S1063774507040165-p DE-627 ger DE-627 rakwb eng 540 530 VZ Piskunov, N. A. verfasserin aut Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2007 Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. Zabotnov, S. V. aut Mamichev, D. A. aut Golovan’, L. A. aut Timoshenko, V. Yu. aut Kashkarov, P. K. aut Enthalten in Crystallography reports Nauka/Interperiodica, 1993 52(2007), 4 vom: Juli, Seite 686-690 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:52 year:2007 number:4 month:07 pages:686-690 https://doi.org/10.1134/S1063774507040165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_70 AR 52 2007 4 07 686-690 |
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10.1134/S1063774507040165 doi (DE-627)OLC2070251179 (DE-He213)S1063774507040165-p DE-627 ger DE-627 rakwb eng 540 530 VZ Piskunov, N. A. verfasserin aut Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2007 Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. Zabotnov, S. V. aut Mamichev, D. A. aut Golovan’, L. A. aut Timoshenko, V. Yu. aut Kashkarov, P. K. aut Enthalten in Crystallography reports Nauka/Interperiodica, 1993 52(2007), 4 vom: Juli, Seite 686-690 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:52 year:2007 number:4 month:07 pages:686-690 https://doi.org/10.1134/S1063774507040165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_70 AR 52 2007 4 07 686-690 |
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10.1134/S1063774507040165 doi (DE-627)OLC2070251179 (DE-He213)S1063774507040165-p DE-627 ger DE-627 rakwb eng 540 530 VZ Piskunov, N. A. verfasserin aut Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron 2007 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2007 Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. Zabotnov, S. V. aut Mamichev, D. A. aut Golovan’, L. A. aut Timoshenko, V. Yu. aut Kashkarov, P. K. aut Enthalten in Crystallography reports Nauka/Interperiodica, 1993 52(2007), 4 vom: Juli, Seite 686-690 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:52 year:2007 number:4 month:07 pages:686-690 https://doi.org/10.1134/S1063774507040165 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_40 GBV_ILN_70 AR 52 2007 4 07 686-690 |
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Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron |
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Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. © Pleiades Publishing, Inc. 2007 |
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Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. © Pleiades Publishing, Inc. 2007 |
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Abstract Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25–45 mΘ cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [1$$\bar 1$$0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated. © Pleiades Publishing, Inc. 2007 |
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1803607134717345792 |
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