Estimation of the kinetic parameters of GaSb crystallization
Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are deter...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Voloshin, A. E. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Inc. 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Crystallography reports - Pleiades Publishing, 1993, 60(2015), 3 vom: Mai, Seite 427-430 |
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| Übergeordnetes Werk: |
volume:60 ; year:2015 ; number:3 ; month:05 ; pages:427-430 |
| Links: |
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| DOI / URN: |
10.1134/S1063774515030232 |
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OLC2070263614 |
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| 520 | |a Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. | ||
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10.1134/S1063774515030232 doi (DE-627)OLC2070263614 (DE-He213)S1063774515030232-p DE-627 ger DE-627 rakwb eng 540 530 VZ Voloshin, A. E. verfasserin aut Estimation of the kinetic parameters of GaSb crystallization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. GaSb Crystallography Report Kinetic Coefficient Detachment Rate Specific Free Energy Enthalten in Crystallography reports Pleiades Publishing, 1993 60(2015), 3 vom: Mai, Seite 427-430 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:60 year:2015 number:3 month:05 pages:427-430 https://doi.org/10.1134/S1063774515030232 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_70 AR 60 2015 3 05 427-430 |
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10.1134/S1063774515030232 doi (DE-627)OLC2070263614 (DE-He213)S1063774515030232-p DE-627 ger DE-627 rakwb eng 540 530 VZ Voloshin, A. E. verfasserin aut Estimation of the kinetic parameters of GaSb crystallization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. GaSb Crystallography Report Kinetic Coefficient Detachment Rate Specific Free Energy Enthalten in Crystallography reports Pleiades Publishing, 1993 60(2015), 3 vom: Mai, Seite 427-430 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:60 year:2015 number:3 month:05 pages:427-430 https://doi.org/10.1134/S1063774515030232 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_70 AR 60 2015 3 05 427-430 |
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10.1134/S1063774515030232 doi (DE-627)OLC2070263614 (DE-He213)S1063774515030232-p DE-627 ger DE-627 rakwb eng 540 530 VZ Voloshin, A. E. verfasserin aut Estimation of the kinetic parameters of GaSb crystallization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Inc. 2015 Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. GaSb Crystallography Report Kinetic Coefficient Detachment Rate Specific Free Energy Enthalten in Crystallography reports Pleiades Publishing, 1993 60(2015), 3 vom: Mai, Seite 427-430 (DE-627)171187822 (DE-600)1162973-3 (DE-576)038500337 1063-7745 nnns volume:60 year:2015 number:3 month:05 pages:427-430 https://doi.org/10.1134/S1063774515030232 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OPC-GGO GBV_ILN_22 GBV_ILN_30 GBV_ILN_70 AR 60 2015 3 05 427-430 |
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Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. © Pleiades Publishing, Inc. 2015 |
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Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. © Pleiades Publishing, Inc. 2015 |
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Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face. © Pleiades Publishing, Inc. 2015 |
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E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Estimation of the kinetic parameters of GaSb crystallization</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Inc. 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract An approach to determine the kinetic coefficient and specific free energy of step in crystals of binary semiconductors is developed on the basis of the Kossel model. The accuracy of the improved model is estimated by the example of Si and Ge crystals. The aforementioned parameters are determined for a GaSb crystal. The Te distribution coefficient in GaSb is estimated for the growth of (111) face.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">GaSb</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystallography Report</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Kinetic Coefficient</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Detachment Rate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Specific Free Energy</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Crystallography reports</subfield><subfield code="d">Pleiades Publishing, 1993</subfield><subfield code="g">60(2015), 3 vom: Mai, Seite 427-430</subfield><subfield code="w">(DE-627)171187822</subfield><subfield code="w">(DE-600)1162973-3</subfield><subfield code="w">(DE-576)038500337</subfield><subfield code="x">1063-7745</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:60</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:3</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:427-430</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1063774515030232</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-CHE</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-GEO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-GGO</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">60</subfield><subfield code="j">2015</subfield><subfield code="e">3</subfield><subfield code="c">05</subfield><subfield code="h">427-430</subfield></datafield></record></collection>
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