Graphite Behavior During a gas Phase Method for Aluminum Nitride Preparation
Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with diffe...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shishkin, R. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media New York 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Refractories and industrial ceramics - Springer US, 1996, 56(2015), 2 vom: Juli, Seite 155-159 |
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| Übergeordnetes Werk: |
volume:56 ; year:2015 ; number:2 ; month:07 ; pages:155-159 |
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| DOI / URN: |
10.1007/s11148-015-9803-7 |
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OLC2071586522 |
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| 520 | |a Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN. | ||
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10.1007/s11148-015-9803-7 doi (DE-627)OLC2071586522 (DE-He213)s11148-015-9803-7-p DE-627 ger DE-627 rakwb eng 670 VZ Shishkin, R. A. verfasserin aut Graphite Behavior During a gas Phase Method for Aluminum Nitride Preparation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer Science+Business Media New York 2015 Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN. aluminium nitride gas-phase synthesis graphite aluminium fluoride Elagin, A. A. aut Beketov, A. R. aut Baranov, M. V. aut Enthalten in Refractories and industrial ceramics Springer US, 1996 56(2015), 2 vom: Juli, Seite 155-159 (DE-627)216727669 (DE-600)1341032-5 (DE-576)055479030 1083-4877 nnns volume:56 year:2015 number:2 month:07 pages:155-159 https://doi.org/10.1007/s11148-015-9803-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_70 AR 56 2015 2 07 155-159 |
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Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN. © Springer Science+Business Media New York 2015 |
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Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN. © Springer Science+Business Media New York 2015 |
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Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. Chemical aspects are considered for transformations and the nature of reaction of aluminium fluoride and nitride with different types of graphite, the effect of fluorides on final synthesis product is revealed, and chemical aspects of their reaction with graphite during AlN synthesis are explained. The possibility is established of creating a protective coating on graphite made of chemically deposited AlN. Calculated and experimental data are obtained for developing a modernized industrial test unit for preparing high purity fine AlN. © Springer Science+Business Media New York 2015 |
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A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Graphite Behavior During a gas Phase Method for Aluminum Nitride Preparation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media New York 2015</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Purity of AlN, synthesized by means of gas-phase technology, depends to a considerable extent on charge component and intermediate compound reactions with structural materials. 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