Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors

Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and e...
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Autor*in:	Bohnert, K. [verfasserIn] Anselment, M. Kobbe, G. Klingshirn, C. Haug, H. Koch, S. W. Schmitt-Rink, S. Abraham, F. F.

Format:	Artikel
Sprache:	Englisch

Erschienen:	1981

Schlagwörter:	Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect

Anmerkung:	© Springer-Verlag 1981

Übergeordnetes Werk:	Enthalten in: Zeitschrift für Physik - Springer-Verlag, 1975, 42(1981), 1 vom: März, Seite 1-11
Übergeordnetes Werk:	volume:42 ; year:1981 ; number:1 ; month:03 ; pages:1-11

Links:	Volltext

DOI / URN:	10.1007/BF01298286

Katalog-ID:	OLC2072255856

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520			\|a Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition.
650		4	\|a Gain Spectrum
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allfields	10.1007/BF01298286 doi (DE-627)OLC2072255856 (DE-He213)BF01298286-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Bohnert, K. verfasserin aut Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect Anselment, M. aut Kobbe, G. aut Klingshirn, C. aut Haug, H. aut Koch, S. W. aut Schmitt-Rink, S. aut Abraham, F. F. aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 42(1981), 1 vom: März, Seite 1-11 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:42 year:1981 number:1 month:03 pages:1-11 https://doi.org/10.1007/BF01298286 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_201 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4320 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 42 1981 1 03 1-11
spelling	10.1007/BF01298286 doi (DE-627)OLC2072255856 (DE-He213)BF01298286-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Bohnert, K. verfasserin aut Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect Anselment, M. aut Kobbe, G. aut Klingshirn, C. aut Haug, H. aut Koch, S. W. aut Schmitt-Rink, S. aut Abraham, F. F. aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 42(1981), 1 vom: März, Seite 1-11 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:42 year:1981 number:1 month:03 pages:1-11 https://doi.org/10.1007/BF01298286 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_201 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4320 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 42 1981 1 03 1-11
allfields_unstemmed	10.1007/BF01298286 doi (DE-627)OLC2072255856 (DE-He213)BF01298286-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Bohnert, K. verfasserin aut Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect Anselment, M. aut Kobbe, G. aut Klingshirn, C. aut Haug, H. aut Koch, S. W. aut Schmitt-Rink, S. aut Abraham, F. F. aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 42(1981), 1 vom: März, Seite 1-11 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:42 year:1981 number:1 month:03 pages:1-11 https://doi.org/10.1007/BF01298286 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_201 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4320 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 42 1981 1 03 1-11
allfieldsGer	10.1007/BF01298286 doi (DE-627)OLC2072255856 (DE-He213)BF01298286-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Bohnert, K. verfasserin aut Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect Anselment, M. aut Kobbe, G. aut Klingshirn, C. aut Haug, H. aut Koch, S. W. aut Schmitt-Rink, S. aut Abraham, F. F. aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 42(1981), 1 vom: März, Seite 1-11 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:42 year:1981 number:1 month:03 pages:1-11 https://doi.org/10.1007/BF01298286 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_201 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4320 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 42 1981 1 03 1-11
allfieldsSound	10.1007/BF01298286 doi (DE-627)OLC2072255856 (DE-He213)BF01298286-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Bohnert, K. verfasserin aut Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect Anselment, M. aut Kobbe, G. aut Klingshirn, C. aut Haug, H. aut Koch, S. W. aut Schmitt-Rink, S. aut Abraham, F. F. aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 42(1981), 1 vom: März, Seite 1-11 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:42 year:1981 number:1 month:03 pages:1-11 https://doi.org/10.1007/BF01298286 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_47 GBV_ILN_59 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_201 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2027 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4193 GBV_ILN_4277 GBV_ILN_4302 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4320 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 42 1981 1 03 1-11
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source	Enthalten in Zeitschrift für Physik 42(1981), 1 vom: März, Seite 1-11 volume:42 year:1981 number:1 month:03 pages:1-11
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author	Bohnert, K.
spellingShingle	Bohnert, K. ddc 530 bkl 33.00 misc Gain Spectrum misc Coexistence Region misc Phase Transition Region misc Nonequilibrium Phase Transition misc Nonequilibrium Effect Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
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topic_title	530 VZ 33.00 bkl Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors Gain Spectrum Coexistence Region Phase Transition Region Nonequilibrium Phase Transition Nonequilibrium Effect
topic	ddc 530 bkl 33.00 misc Gain Spectrum misc Coexistence Region misc Phase Transition Region misc Nonequilibrium Phase Transition misc Nonequilibrium Effect
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title	Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
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title_full	Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
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title_sort	nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
title_auth	Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
abstract	Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. © Springer-Verlag 1981
abstractGer	Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. © Springer-Verlag 1981
abstract_unstemmed	Abstract The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. © Springer-Verlag 1981
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title_short	Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors
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Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors

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