Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices
Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} i...
Ausführliche Beschreibung
Autor*in: |
Binder, Kurt [verfasserIn] |
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Artikel |
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Sprache: |
Englisch |
Erschienen: |
1997 |
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Anmerkung: |
© Springer-Verlag 1997 |
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Übergeordnetes Werk: |
Enthalten in: Zeitschrift für Physik - Springer-Verlag, 1975, 104(1997), 1 vom: Jan., Seite 81-98 |
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Übergeordnetes Werk: |
volume:104 ; year:1997 ; number:1 ; month:01 ; pages:81-98 |
Links: |
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DOI / URN: |
10.1007/s002570050423 |
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Katalog-ID: |
OLC2072294878 |
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520 | |a Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. | ||
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10.1007/s002570050423 doi (DE-627)OLC2072294878 (DE-He213)s002570050423-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Binder, Kurt verfasserin aut Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1997 Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. Spinodal Decomposition Phase Coexistence Lever Rule Coexistence Curve Domain Growth Nielaba, Peter aut Pereyra, Victor aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 104(1997), 1 vom: Jan., Seite 81-98 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:104 year:1997 number:1 month:01 pages:81-98 https://doi.org/10.1007/s002570050423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 104 1997 1 01 81-98 |
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10.1007/s002570050423 doi (DE-627)OLC2072294878 (DE-He213)s002570050423-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Binder, Kurt verfasserin aut Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1997 Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. Spinodal Decomposition Phase Coexistence Lever Rule Coexistence Curve Domain Growth Nielaba, Peter aut Pereyra, Victor aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 104(1997), 1 vom: Jan., Seite 81-98 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:104 year:1997 number:1 month:01 pages:81-98 https://doi.org/10.1007/s002570050423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 104 1997 1 01 81-98 |
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10.1007/s002570050423 doi (DE-627)OLC2072294878 (DE-He213)s002570050423-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Binder, Kurt verfasserin aut Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1997 Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. Spinodal Decomposition Phase Coexistence Lever Rule Coexistence Curve Domain Growth Nielaba, Peter aut Pereyra, Victor aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 104(1997), 1 vom: Jan., Seite 81-98 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:104 year:1997 number:1 month:01 pages:81-98 https://doi.org/10.1007/s002570050423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 104 1997 1 01 81-98 |
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10.1007/s002570050423 doi (DE-627)OLC2072294878 (DE-He213)s002570050423-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Binder, Kurt verfasserin aut Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1997 Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. Spinodal Decomposition Phase Coexistence Lever Rule Coexistence Curve Domain Growth Nielaba, Peter aut Pereyra, Victor aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 104(1997), 1 vom: Jan., Seite 81-98 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:104 year:1997 number:1 month:01 pages:81-98 https://doi.org/10.1007/s002570050423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 104 1997 1 01 81-98 |
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10.1007/s002570050423 doi (DE-627)OLC2072294878 (DE-He213)s002570050423-p DE-627 ger DE-627 rakwb eng 530 VZ 33.00 bkl Binder, Kurt verfasserin aut Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices 1997 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1997 Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. Spinodal Decomposition Phase Coexistence Lever Rule Coexistence Curve Domain Growth Nielaba, Peter aut Pereyra, Victor aut Enthalten in Zeitschrift für Physik Springer-Verlag, 1975 104(1997), 1 vom: Jan., Seite 81-98 (DE-627)129415383 (DE-600)189287-3 (DE-576)014793687 0340-224X nnns volume:104 year:1997 number:1 month:01 pages:81-98 https://doi.org/10.1007/s002570050423 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_30 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_62 GBV_ILN_65 GBV_ILN_70 GBV_ILN_105 GBV_ILN_130 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2010 GBV_ILN_2012 GBV_ILN_2014 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2185 GBV_ILN_2192 GBV_ILN_2221 GBV_ILN_2279 GBV_ILN_4046 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 33.00 VZ AR 104 1997 1 01 81-98 |
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phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional ising lattices |
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Phase coexistence in binary mixtures in thin films with symmetric walls: model calculations for two- and three-dimensional Ising lattices |
abstract |
Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. © Springer-Verlag 1997 |
abstractGer |
Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. © Springer-Verlag 1997 |
abstract_unstemmed |
Abstract Binary mixtures (A, B) that undergo phase separation in the bulk are considered in thin film geometry, assuming that one of the components is preferentially attracted to one of the walls. We discuss the average profile of the order parameter {volume fraction φ(z) of one of the components} in the z-direction (perpendicular to the surfaces), paying attention to the lateral inhomogeneity of the thin film when the average volume fraction corresponds to a state inside the coexistence curve. We consider the situation where due to (short range) surface forces a second-order wetting transition would occur in semi-infinite geometry: in the thin film geometry, this transition is rounded off and its only remnant is a smooth increase of the adsorbed mass in the surface-enriched layer in the transition region. Monte Carlo calculations for nearest neighbor Ising square and simple cubic lattices are used to derive typical concentration profiles. In the two-dimensional case, also the kinetics of domain formation after the quench from a disordered state is considered, and it is shown that the typical concentration oscillations perpendicular to the wall (“surface directed spinodal decomposition”) do not occur, due to strong lateral fluctuations of the local position of the interface between the enrichment layer at the surface and the neighboring depleted region. Finally, also phase-separated states in thin films with competing walls (where one surface prefers A and the other prefers B) are briefly treated, and experimental applications are discussed. © Springer-Verlag 1997 |
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