Silicon switching structures with fluorides of rare-earth elements
Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rozhkov, V. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Schlagwörter: |
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| Anmerkung: |
© American Institute of Physics 1998 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 24(1998), 8 vom: Aug., Seite 663-664 |
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| Übergeordnetes Werk: |
volume:24 ; year:1998 ; number:8 ; month:08 ; pages:663-664 |
| Links: |
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| DOI / URN: |
10.1134/1.1262237 |
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OLC2072845971 |
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| 520 | |a Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. | ||
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10.1134/1.1262237 doi (DE-627)OLC2072845971 (DE-He213)1.1262237-p DE-627 ger DE-627 rakwb eng 530 VZ Rozhkov, V. A. verfasserin aut Silicon switching structures with fluorides of rare-earth elements 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1998 Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. Silicon Fluoride Kinetic Characteristic Switching Structure Photoelectric Characteristic Shalimova, M. B. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 24(1998), 8 vom: Aug., Seite 663-664 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:24 year:1998 number:8 month:08 pages:663-664 https://doi.org/10.1134/1.1262237 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_4700 AR 24 1998 8 08 663-664 |
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10.1134/1.1262237 doi (DE-627)OLC2072845971 (DE-He213)1.1262237-p DE-627 ger DE-627 rakwb eng 530 VZ Rozhkov, V. A. verfasserin aut Silicon switching structures with fluorides of rare-earth elements 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1998 Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. Silicon Fluoride Kinetic Characteristic Switching Structure Photoelectric Characteristic Shalimova, M. B. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 24(1998), 8 vom: Aug., Seite 663-664 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:24 year:1998 number:8 month:08 pages:663-664 https://doi.org/10.1134/1.1262237 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_4700 AR 24 1998 8 08 663-664 |
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10.1134/1.1262237 doi (DE-627)OLC2072845971 (DE-He213)1.1262237-p DE-627 ger DE-627 rakwb eng 530 VZ Rozhkov, V. A. verfasserin aut Silicon switching structures with fluorides of rare-earth elements 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1998 Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. Silicon Fluoride Kinetic Characteristic Switching Structure Photoelectric Characteristic Shalimova, M. B. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 24(1998), 8 vom: Aug., Seite 663-664 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:24 year:1998 number:8 month:08 pages:663-664 https://doi.org/10.1134/1.1262237 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_4700 AR 24 1998 8 08 663-664 |
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10.1134/1.1262237 doi (DE-627)OLC2072845971 (DE-He213)1.1262237-p DE-627 ger DE-627 rakwb eng 530 VZ Rozhkov, V. A. verfasserin aut Silicon switching structures with fluorides of rare-earth elements 1998 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1998 Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. Silicon Fluoride Kinetic Characteristic Switching Structure Photoelectric Characteristic Shalimova, M. B. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 24(1998), 8 vom: Aug., Seite 663-664 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:24 year:1998 number:8 month:08 pages:663-664 https://doi.org/10.1134/1.1262237 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2014 GBV_ILN_2016 GBV_ILN_4700 AR 24 1998 8 08 663-664 |
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Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. © American Institute of Physics 1998 |
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A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon switching structures with fluorides of rare-earth elements</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© American Institute of Physics 1998</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. 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B.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Technical physics letters</subfield><subfield code="d">Nauka/Interperiodica, 1993</subfield><subfield code="g">24(1998), 8 vom: Aug., Seite 663-664</subfield><subfield code="w">(DE-627)171149521</subfield><subfield code="w">(DE-600)1158056-2</subfield><subfield code="w">(DE-576)038488426</subfield><subfield code="x">1063-7850</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:24</subfield><subfield code="g">year:1998</subfield><subfield code="g">number:8</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:663-664</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/1.1262237</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_130</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">24</subfield><subfield code="j">1998</subfield><subfield code="e">8</subfield><subfield code="c">08</subfield><subfield code="h">663-664</subfield></datafield></record></collection>
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