Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon
Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV)...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kostishko, B. M. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1999 |
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| Schlagwörter: |
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| Anmerkung: |
© American Institute of Physics 1999 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 25(1999), 3 vom: März, Seite 212-214 |
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| Übergeordnetes Werk: |
volume:25 ; year:1999 ; number:3 ; month:03 ; pages:212-214 |
| Links: |
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| DOI / URN: |
10.1134/1.1262426 |
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OLC2072848296 |
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| 520 | |a Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. | ||
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10.1134/1.1262426 doi (DE-627)OLC2072848296 (DE-He213)1.1262426-p DE-627 ger DE-627 rakwb eng 530 VZ Kostishko, B. M. verfasserin aut Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1999 Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. Silicon Time Dependence Decay Time Porous Silicon Decay Curve Atazhanov, Sh. R. aut Mikov, S. N. aut Puzov, I. P. aut Kordetskii, K. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 25(1999), 3 vom: März, Seite 212-214 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:25 year:1999 number:3 month:03 pages:212-214 https://doi.org/10.1134/1.1262426 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 25 1999 3 03 212-214 |
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10.1134/1.1262426 doi (DE-627)OLC2072848296 (DE-He213)1.1262426-p DE-627 ger DE-627 rakwb eng 530 VZ Kostishko, B. M. verfasserin aut Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1999 Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. Silicon Time Dependence Decay Time Porous Silicon Decay Curve Atazhanov, Sh. R. aut Mikov, S. N. aut Puzov, I. P. aut Kordetskii, K. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 25(1999), 3 vom: März, Seite 212-214 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:25 year:1999 number:3 month:03 pages:212-214 https://doi.org/10.1134/1.1262426 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 25 1999 3 03 212-214 |
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10.1134/1.1262426 doi (DE-627)OLC2072848296 (DE-He213)1.1262426-p DE-627 ger DE-627 rakwb eng 530 VZ Kostishko, B. M. verfasserin aut Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1999 Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. Silicon Time Dependence Decay Time Porous Silicon Decay Curve Atazhanov, Sh. R. aut Mikov, S. N. aut Puzov, I. P. aut Kordetskii, K. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 25(1999), 3 vom: März, Seite 212-214 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:25 year:1999 number:3 month:03 pages:212-214 https://doi.org/10.1134/1.1262426 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 25 1999 3 03 212-214 |
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10.1134/1.1262426 doi (DE-627)OLC2072848296 (DE-He213)1.1262426-p DE-627 ger DE-627 rakwb eng 530 VZ Kostishko, B. M. verfasserin aut Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon 1999 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © American Institute of Physics 1999 Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. Silicon Time Dependence Decay Time Porous Silicon Decay Curve Atazhanov, Sh. R. aut Mikov, S. N. aut Puzov, I. P. aut Kordetskii, K. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 25(1999), 3 vom: März, Seite 212-214 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:25 year:1999 number:3 month:03 pages:212-214 https://doi.org/10.1134/1.1262426 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 25 1999 3 03 212-214 |
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Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. © American Institute of Physics 1999 |
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Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. © American Institute of Physics 1999 |
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Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. The boron-doped samples show an anomalously long decay time for the blue-green (2.4 eV) photoluminescence band. In addition, in this case oscillations with a period of 50 ms are observed in the photoluminescence decay curve. © American Institute of Physics 1999 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2072848296</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504113642.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s1999 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/1.1262426</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2072848296</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)1.1262426-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kostishko, B. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Anomalous character of the decay kinetics of the photoluminescence of carbonized porous silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1999</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© American Institute of Physics 1999</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The time dependence of the decay of the photoluminescence of porous silicon subjected to high-temperature carbonization (1000–1200 °C) and simultaneously doped with B, P, Ga, or Al atoms is investigated. 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