Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors
Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Karazhanov, S. Zh. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2000 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK "Nauka/Interperiodica" 2000 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 26(2000), 3 vom: März, Seite 187-189 |
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| Übergeordnetes Werk: |
volume:26 ; year:2000 ; number:3 ; month:03 ; pages:187-189 |
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| DOI / URN: |
10.1134/1.1262787 |
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| 520 | |a Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. | ||
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10.1134/1.1262787 doi (DE-627)OLC2072851874 (DE-He213)1.1262787-p DE-627 ger DE-627 rakwb eng 530 VZ Karazhanov, S. Zh. verfasserin aut Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2000 Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. Recombination Charge Carrier Sharp Increase Sharp Decrease Carrier Lifetime Enthalten in Technical physics letters Nauka/Interperiodica, 1993 26(2000), 3 vom: März, Seite 187-189 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:26 year:2000 number:3 month:03 pages:187-189 https://doi.org/10.1134/1.1262787 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 26 2000 3 03 187-189 |
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10.1134/1.1262787 doi (DE-627)OLC2072851874 (DE-He213)1.1262787-p DE-627 ger DE-627 rakwb eng 530 VZ Karazhanov, S. Zh. verfasserin aut Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2000 Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. Recombination Charge Carrier Sharp Increase Sharp Decrease Carrier Lifetime Enthalten in Technical physics letters Nauka/Interperiodica, 1993 26(2000), 3 vom: März, Seite 187-189 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:26 year:2000 number:3 month:03 pages:187-189 https://doi.org/10.1134/1.1262787 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 26 2000 3 03 187-189 |
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10.1134/1.1262787 doi (DE-627)OLC2072851874 (DE-He213)1.1262787-p DE-627 ger DE-627 rakwb eng 530 VZ Karazhanov, S. Zh. verfasserin aut Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2000 Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. Recombination Charge Carrier Sharp Increase Sharp Decrease Carrier Lifetime Enthalten in Technical physics letters Nauka/Interperiodica, 1993 26(2000), 3 vom: März, Seite 187-189 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:26 year:2000 number:3 month:03 pages:187-189 https://doi.org/10.1134/1.1262787 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 26 2000 3 03 187-189 |
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10.1134/1.1262787 doi (DE-627)OLC2072851874 (DE-He213)1.1262787-p DE-627 ger DE-627 rakwb eng 530 VZ Karazhanov, S. Zh. verfasserin aut Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2000 Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. Recombination Charge Carrier Sharp Increase Sharp Decrease Carrier Lifetime Enthalten in Technical physics letters Nauka/Interperiodica, 1993 26(2000), 3 vom: März, Seite 187-189 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:26 year:2000 number:3 month:03 pages:187-189 https://doi.org/10.1134/1.1262787 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 26 2000 3 03 187-189 |
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10.1134/1.1262787 doi (DE-627)OLC2072851874 (DE-He213)1.1262787-p DE-627 ger DE-627 rakwb eng 530 VZ Karazhanov, S. Zh. verfasserin aut Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors 2000 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2000 Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. Recombination Charge Carrier Sharp Increase Sharp Decrease Carrier Lifetime Enthalten in Technical physics letters Nauka/Interperiodica, 1993 26(2000), 3 vom: März, Seite 187-189 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:26 year:2000 number:3 month:03 pages:187-189 https://doi.org/10.1134/1.1262787 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_32 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 26 2000 3 03 187-189 |
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Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors |
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Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. © MAIK "Nauka/Interperiodica" 2000 |
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Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. © MAIK "Nauka/Interperiodica" 2000 |
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Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity. © MAIK "Nauka/Interperiodica" 2000 |
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Zh.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© MAIK "Nauka/Interperiodica" 2000</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The lifetimes of electrons and holes in semiconductors were studied with respect to their recombination via excitons formed on isoelectronic traps. The curve of carrier lifetime versus trap concentration is nonmonotonic and exhibits a maximum. The effect is related to a sharp decrease in the concentration of major carriers under full compensation conditions and is accompanied by sharp increase in the semiconductor resistivity.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Recombination</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Charge Carrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sharp Increase</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Sharp Decrease</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Carrier Lifetime</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Technical physics letters</subfield><subfield code="d">Nauka/Interperiodica, 1993</subfield><subfield code="g">26(2000), 3 vom: März, Seite 187-189</subfield><subfield code="w">(DE-627)171149521</subfield><subfield code="w">(DE-600)1158056-2</subfield><subfield code="w">(DE-576)038488426</subfield><subfield code="x">1063-7850</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:2000</subfield><subfield code="g">number:3</subfield><subfield code="g">month:03</subfield><subfield code="g">pages:187-189</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/1.1262787</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">2000</subfield><subfield code="e">3</subfield><subfield code="c">03</subfield><subfield code="h">187-189</subfield></datafield></record></collection>
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