Degradation processes in the aluminum-silicon system induced by pulsed electric signals
Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Skvortsov, A. A. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2001 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK "Nauka/Interperiodica" 2001 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 27(2001), 10 vom: Okt., Seite 834-837 |
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| Übergeordnetes Werk: |
volume:27 ; year:2001 ; number:10 ; month:10 ; pages:834-837 |
| Links: |
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| DOI / URN: |
10.1134/1.1414449 |
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| 520 | |a Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. | ||
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10.1134/1.1414449 doi (DE-627)OLC207285749X (DE-He213)1.1414449-p DE-627 ger DE-627 rakwb eng 530 VZ Skvortsov, A. A. verfasserin aut Degradation processes in the aluminum-silicon system induced by pulsed electric signals 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2001 Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. Silicon Substrate Current Pulse Critical Current Density Electric Pulse Crystal Silicon Orlov, A. M. aut Salanov, A. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 27(2001), 10 vom: Okt., Seite 834-837 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:27 year:2001 number:10 month:10 pages:834-837 https://doi.org/10.1134/1.1414449 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 27 2001 10 10 834-837 |
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10.1134/1.1414449 doi (DE-627)OLC207285749X (DE-He213)1.1414449-p DE-627 ger DE-627 rakwb eng 530 VZ Skvortsov, A. A. verfasserin aut Degradation processes in the aluminum-silicon system induced by pulsed electric signals 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2001 Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. Silicon Substrate Current Pulse Critical Current Density Electric Pulse Crystal Silicon Orlov, A. M. aut Salanov, A. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 27(2001), 10 vom: Okt., Seite 834-837 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:27 year:2001 number:10 month:10 pages:834-837 https://doi.org/10.1134/1.1414449 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 27 2001 10 10 834-837 |
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10.1134/1.1414449 doi (DE-627)OLC207285749X (DE-He213)1.1414449-p DE-627 ger DE-627 rakwb eng 530 VZ Skvortsov, A. A. verfasserin aut Degradation processes in the aluminum-silicon system induced by pulsed electric signals 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2001 Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. Silicon Substrate Current Pulse Critical Current Density Electric Pulse Crystal Silicon Orlov, A. M. aut Salanov, A. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 27(2001), 10 vom: Okt., Seite 834-837 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:27 year:2001 number:10 month:10 pages:834-837 https://doi.org/10.1134/1.1414449 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 27 2001 10 10 834-837 |
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10.1134/1.1414449 doi (DE-627)OLC207285749X (DE-He213)1.1414449-p DE-627 ger DE-627 rakwb eng 530 VZ Skvortsov, A. A. verfasserin aut Degradation processes in the aluminum-silicon system induced by pulsed electric signals 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2001 Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. Silicon Substrate Current Pulse Critical Current Density Electric Pulse Crystal Silicon Orlov, A. M. aut Salanov, A. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 27(2001), 10 vom: Okt., Seite 834-837 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:27 year:2001 number:10 month:10 pages:834-837 https://doi.org/10.1134/1.1414449 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 27 2001 10 10 834-837 |
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10.1134/1.1414449 doi (DE-627)OLC207285749X (DE-He213)1.1414449-p DE-627 ger DE-627 rakwb eng 530 VZ Skvortsov, A. A. verfasserin aut Degradation processes in the aluminum-silicon system induced by pulsed electric signals 2001 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2001 Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. Silicon Substrate Current Pulse Critical Current Density Electric Pulse Crystal Silicon Orlov, A. M. aut Salanov, A. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 27(2001), 10 vom: Okt., Seite 834-837 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:27 year:2001 number:10 month:10 pages:834-837 https://doi.org/10.1134/1.1414449 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 27 2001 10 10 834-837 |
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Degradation processes in the aluminum-silicon system induced by pulsed electric signals |
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Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. © MAIK "Nauka/Interperiodica" 2001 |
| abstractGer |
Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. © MAIK "Nauka/Interperiodica" 2001 |
| abstract_unstemmed |
Abstract Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j=(1–8)×$ 10^{10} $ A/$ m^{2} $ and a duration of τ=50–800 μs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities jk are proposed. The critical current density depends on the current pulse duration as described by the relationship $$j_k \sim 1/\sqrt[4]{\tau }$$. It is established that the passage of single current pulses with j≥5×$ 10^{10} $ A/$ m^{2} $ and τ≥200 μs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. © MAIK "Nauka/Interperiodica" 2001 |
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Degradation processes in the aluminum-silicon system induced by pulsed electric signals |
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Orlov, A. M. Salanov, A. A. |
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