Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions
Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grow...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Pevtsov, A. B. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2002 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK "Nauka/Interperiodica" 2002 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 28(2002), 4 vom: Apr., Seite 305-307 |
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| Übergeordnetes Werk: |
volume:28 ; year:2002 ; number:4 ; month:04 ; pages:305-307 |
| Links: |
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| DOI / URN: |
10.1134/1.1476999 |
|---|
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OLC2072859263 |
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| 520 | |a Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. | ||
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10.1134/1.1476999 doi (DE-627)OLC2072859263 (DE-He213)1.1476999-p DE-627 ger DE-627 rakwb eng 530 VZ Pevtsov, A. B. verfasserin aut Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2002 Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. Silicon Chemical Vapor Deposition Vapor Deposition Process Rate Chemical Vapor Feoktistov, N. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 28(2002), 4 vom: Apr., Seite 305-307 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:28 year:2002 number:4 month:04 pages:305-307 https://doi.org/10.1134/1.1476999 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 28 2002 4 04 305-307 |
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10.1134/1.1476999 doi (DE-627)OLC2072859263 (DE-He213)1.1476999-p DE-627 ger DE-627 rakwb eng 530 VZ Pevtsov, A. B. verfasserin aut Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2002 Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. Silicon Chemical Vapor Deposition Vapor Deposition Process Rate Chemical Vapor Feoktistov, N. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 28(2002), 4 vom: Apr., Seite 305-307 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:28 year:2002 number:4 month:04 pages:305-307 https://doi.org/10.1134/1.1476999 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 28 2002 4 04 305-307 |
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10.1134/1.1476999 doi (DE-627)OLC2072859263 (DE-He213)1.1476999-p DE-627 ger DE-627 rakwb eng 530 VZ Pevtsov, A. B. verfasserin aut Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions 2002 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2002 Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. Silicon Chemical Vapor Deposition Vapor Deposition Process Rate Chemical Vapor Feoktistov, N. A. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 28(2002), 4 vom: Apr., Seite 305-307 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:28 year:2002 number:4 month:04 pages:305-307 https://doi.org/10.1134/1.1476999 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 28 2002 4 04 305-307 |
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Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. © MAIK "Nauka/Interperiodica" 2002 |
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Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. © MAIK "Nauka/Interperiodica" 2002 |
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Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. Using the TMWP-PECVD technique allows the nanocrystalline silicon films to be grown at a rate of up to 3 Å/s, which is 4–6 times as large as the process rate achieved with the conventional PECVD method. © MAIK "Nauka/Interperiodica" 2002 |
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B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2002</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© MAIK "Nauka/Interperiodica" 2002</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract It is suggested to use a time-modulated-microwave-power (TMWP) discharge regime for obtaining nanocrystalline silicon films by plasma-enhanced chemical-vapor deposition (PECVD) from a silane-hydrogen mixture. 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