Determining defect complex formation parameters from isochronous annealing curves
Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bulyarskii, S. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2003 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK "Nauka/Interperiodica" 2003 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 29(2003), 2 vom: Feb., Seite 88-89 |
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| Übergeordnetes Werk: |
volume:29 ; year:2003 ; number:2 ; month:02 ; pages:88-89 |
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| DOI / URN: |
10.1134/1.1558732 |
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| 520 | |a Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). | ||
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10.1134/1.1558732 doi (DE-627)OLC2072862272 (DE-He213)1.1558732-p DE-627 ger DE-627 rakwb eng 530 VZ Bulyarskii, S. V. verfasserin aut Determining defect complex formation parameters from isochronous annealing curves 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). Iron Silicon Activation Energy Complex Formation Formation Energy Svetukhin, V. V. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 2 vom: Feb., Seite 88-89 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:2 month:02 pages:88-89 https://doi.org/10.1134/1.1558732 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 2 02 88-89 |
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10.1134/1.1558732 doi (DE-627)OLC2072862272 (DE-He213)1.1558732-p DE-627 ger DE-627 rakwb eng 530 VZ Bulyarskii, S. V. verfasserin aut Determining defect complex formation parameters from isochronous annealing curves 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). Iron Silicon Activation Energy Complex Formation Formation Energy Svetukhin, V. V. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 2 vom: Feb., Seite 88-89 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:2 month:02 pages:88-89 https://doi.org/10.1134/1.1558732 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 2 02 88-89 |
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10.1134/1.1558732 doi (DE-627)OLC2072862272 (DE-He213)1.1558732-p DE-627 ger DE-627 rakwb eng 530 VZ Bulyarskii, S. V. verfasserin aut Determining defect complex formation parameters from isochronous annealing curves 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). Iron Silicon Activation Energy Complex Formation Formation Energy Svetukhin, V. V. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 2 vom: Feb., Seite 88-89 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:2 month:02 pages:88-89 https://doi.org/10.1134/1.1558732 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 2 02 88-89 |
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10.1134/1.1558732 doi (DE-627)OLC2072862272 (DE-He213)1.1558732-p DE-627 ger DE-627 rakwb eng 530 VZ Bulyarskii, S. V. verfasserin aut Determining defect complex formation parameters from isochronous annealing curves 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). Iron Silicon Activation Energy Complex Formation Formation Energy Svetukhin, V. V. aut Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 2 vom: Feb., Seite 88-89 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:2 month:02 pages:88-89 https://doi.org/10.1134/1.1558732 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 2 02 88-89 |
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Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). © MAIK "Nauka/Interperiodica" 2003 |
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Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). © MAIK "Nauka/Interperiodica" 2003 |
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Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au-Fe complexes in silicon, estimates are obtained for the complex formation energy (0.8 eV) and the activation energy of iron diffusion (0.9 eV). © MAIK "Nauka/Interperiodica" 2003 |
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V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Determining defect complex formation parameters from isochronous annealing curves</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2003</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© MAIK "Nauka/Interperiodica" 2003</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Parameters of the defect complex formation in semiconductors can be determined from the experimental curves of isochronous annealing. 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V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Technical physics letters</subfield><subfield code="d">Nauka/Interperiodica, 1993</subfield><subfield code="g">29(2003), 2 vom: Feb., Seite 88-89</subfield><subfield code="w">(DE-627)171149521</subfield><subfield code="w">(DE-600)1158056-2</subfield><subfield code="w">(DE-576)038488426</subfield><subfield code="x">1063-7850</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:29</subfield><subfield code="g">year:2003</subfield><subfield code="g">number:2</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:88-89</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/1.1558732</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">29</subfield><subfield code="j">2003</subfield><subfield code="e">2</subfield><subfield code="c">02</subfield><subfield code="h">88-89</subfield></datafield></record></collection>
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