Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors
Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement.
Gespeichert in:
| Autor*in: |
Sidorov, A. I. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2003 |
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| Schlagwörter: |
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| Anmerkung: |
© MAIK "Nauka/Interperiodica" 2003 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Nauka/Interperiodica, 1993, 29(2003), 4 vom: Apr., Seite 300-301 |
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| Übergeordnetes Werk: |
volume:29 ; year:2003 ; number:4 ; month:04 ; pages:300-301 |
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| DOI / URN: |
10.1134/1.1573297 |
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| 520 | |a Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. | ||
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10.1134/1.1573297 doi (DE-627)OLC2072862744 (DE-He213)1.1573297-p DE-627 ger DE-627 rakwb eng 530 VZ Sidorov, A. I. verfasserin aut Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. Impurity Level Spatial Dynamic Axial Profile Deep Impurity Optical Confinement Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 4 vom: Apr., Seite 300-301 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:4 month:04 pages:300-301 https://doi.org/10.1134/1.1573297 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 4 04 300-301 |
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10.1134/1.1573297 doi (DE-627)OLC2072862744 (DE-He213)1.1573297-p DE-627 ger DE-627 rakwb eng 530 VZ Sidorov, A. I. verfasserin aut Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. Impurity Level Spatial Dynamic Axial Profile Deep Impurity Optical Confinement Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 4 vom: Apr., Seite 300-301 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:4 month:04 pages:300-301 https://doi.org/10.1134/1.1573297 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 4 04 300-301 |
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10.1134/1.1573297 doi (DE-627)OLC2072862744 (DE-He213)1.1573297-p DE-627 ger DE-627 rakwb eng 530 VZ Sidorov, A. I. verfasserin aut Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. Impurity Level Spatial Dynamic Axial Profile Deep Impurity Optical Confinement Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 4 vom: Apr., Seite 300-301 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:4 month:04 pages:300-301 https://doi.org/10.1134/1.1573297 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 4 04 300-301 |
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10.1134/1.1573297 doi (DE-627)OLC2072862744 (DE-He213)1.1573297-p DE-627 ger DE-627 rakwb eng 530 VZ Sidorov, A. I. verfasserin aut Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors 2003 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © MAIK "Nauka/Interperiodica" 2003 Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. Impurity Level Spatial Dynamic Axial Profile Deep Impurity Optical Confinement Enthalten in Technical physics letters Nauka/Interperiodica, 1993 29(2003), 4 vom: Apr., Seite 300-301 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:29 year:2003 number:4 month:04 pages:300-301 https://doi.org/10.1134/1.1573297 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_40 GBV_ILN_70 GBV_ILN_2014 GBV_ILN_4700 AR 29 2003 4 04 300-301 |
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photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors |
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Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors |
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Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. © MAIK "Nauka/Interperiodica" 2003 |
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Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. © MAIK "Nauka/Interperiodica" 2003 |
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Abstract Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. © MAIK "Nauka/Interperiodica" 2003 |
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