Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer
Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mikhailovich, S. V. [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2018 |
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| Übergeordnetes Werk: |
Enthalten in: Technical physics letters - Pleiades Publishing, 1993, 44(2018), 5 vom: Mai, Seite 435-437 |
|---|---|
| Übergeordnetes Werk: |
volume:44 ; year:2018 ; number:5 ; month:05 ; pages:435-437 |
| Links: |
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| DOI / URN: |
10.1134/S1063785018050218 |
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OLC2072908671 |
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| 520 | |a Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. | ||
| 700 | 1 | |a Pavlov, A. Yu. |4 aut | |
| 700 | 1 | |a Tomosh, K. N. |4 aut | |
| 700 | 1 | |a Fedorov, Yu. V. |4 aut | |
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10.1134/S1063785018050218 doi (DE-627)OLC2072908671 (DE-He213)S1063785018050218-p DE-627 ger DE-627 rakwb eng 530 VZ Mikhailovich, S. V. verfasserin aut Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2018 Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. Pavlov, A. Yu. aut Tomosh, K. N. aut Fedorov, Yu. V. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 44(2018), 5 vom: Mai, Seite 435-437 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:44 year:2018 number:5 month:05 pages:435-437 https://doi.org/10.1134/S1063785018050218 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 44 2018 5 05 435-437 |
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10.1134/S1063785018050218 doi (DE-627)OLC2072908671 (DE-He213)S1063785018050218-p DE-627 ger DE-627 rakwb eng 530 VZ Mikhailovich, S. V. verfasserin aut Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2018 Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. Pavlov, A. Yu. aut Tomosh, K. N. aut Fedorov, Yu. V. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 44(2018), 5 vom: Mai, Seite 435-437 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:44 year:2018 number:5 month:05 pages:435-437 https://doi.org/10.1134/S1063785018050218 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 44 2018 5 05 435-437 |
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10.1134/S1063785018050218 doi (DE-627)OLC2072908671 (DE-He213)S1063785018050218-p DE-627 ger DE-627 rakwb eng 530 VZ Mikhailovich, S. V. verfasserin aut Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2018 Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. Pavlov, A. Yu. aut Tomosh, K. N. aut Fedorov, Yu. V. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 44(2018), 5 vom: Mai, Seite 435-437 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:44 year:2018 number:5 month:05 pages:435-437 https://doi.org/10.1134/S1063785018050218 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 44 2018 5 05 435-437 |
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10.1134/S1063785018050218 doi (DE-627)OLC2072908671 (DE-He213)S1063785018050218-p DE-627 ger DE-627 rakwb eng 530 VZ Mikhailovich, S. V. verfasserin aut Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2018 Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. Pavlov, A. Yu. aut Tomosh, K. N. aut Fedorov, Yu. V. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 44(2018), 5 vom: Mai, Seite 435-437 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:44 year:2018 number:5 month:05 pages:435-437 https://doi.org/10.1134/S1063785018050218 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 44 2018 5 05 435-437 |
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10.1134/S1063785018050218 doi (DE-627)OLC2072908671 (DE-He213)S1063785018050218-p DE-627 ger DE-627 rakwb eng 530 VZ Mikhailovich, S. V. verfasserin aut Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer 2018 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Pleiades Publishing, Ltd. 2018 Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. Pavlov, A. Yu. aut Tomosh, K. N. aut Fedorov, Yu. V. aut Enthalten in Technical physics letters Pleiades Publishing, 1993 44(2018), 5 vom: Mai, Seite 435-437 (DE-627)171149521 (DE-600)1158056-2 (DE-576)038488426 1063-7850 nnns volume:44 year:2018 number:5 month:05 pages:435-437 https://doi.org/10.1134/S1063785018050218 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 AR 44 2018 5 05 435-437 |
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Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer |
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Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. © Pleiades Publishing, Ltd. 2018 |
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Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. © Pleiades Publishing, Ltd. 2018 |
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Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. © Pleiades Publishing, Ltd. 2018 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC2072908671</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230504114413.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">200820s2018 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1063785018050218</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC2072908671</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-He213)S1063785018050218-p</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mikhailovich, S. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2018</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled $ BCl_{3} $ plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pavlov, A. Yu.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tomosh, K. N.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fedorov, Yu. V.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Technical physics letters</subfield><subfield code="d">Pleiades Publishing, 1993</subfield><subfield code="g">44(2018), 5 vom: Mai, Seite 435-437</subfield><subfield code="w">(DE-627)171149521</subfield><subfield code="w">(DE-600)1158056-2</subfield><subfield code="w">(DE-576)038488426</subfield><subfield code="x">1063-7850</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:44</subfield><subfield code="g">year:2018</subfield><subfield code="g">number:5</subfield><subfield code="g">month:05</subfield><subfield code="g">pages:435-437</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">https://doi.org/10.1134/S1063785018050218</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">44</subfield><subfield code="j">2018</subfield><subfield code="e">5</subfield><subfield code="c">05</subfield><subfield code="h">435-437</subfield></datafield></record></collection>
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