Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels

Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions a...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Ghezzi, C. [verfasserIn]

Format:	Artikel
Sprache:	Englisch

Erschienen:	1981

Systematik:	UA 9001.A

Anmerkung:	© Springer-Verlag 1981

Übergeordnetes Werk:	Enthalten in: Applied physics. A, Materials science & processing - Springer-Verlag, 1981, 26(1981), 3 vom: Nov., Seite 191-202
Übergeordnetes Werk:	volume:26 ; year:1981 ; number:3 ; month:11 ; pages:191-202

Links:	Volltext

DOI / URN:	10.1007/BF00614756

Katalog-ID:	OLC2074108036

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allfields	10.1007/BF00614756 doi (DE-627)OLC2074108036 (DE-He213)BF00614756-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Ghezzi, C. verfasserin aut Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 26(1981), 3 vom: Nov., Seite 191-202 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:26 year:1981 number:3 month:11 pages:191-202 https://doi.org/10.1007/BF00614756 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 26 1981 3 11 191-202
spelling	10.1007/BF00614756 doi (DE-627)OLC2074108036 (DE-He213)BF00614756-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Ghezzi, C. verfasserin aut Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 26(1981), 3 vom: Nov., Seite 191-202 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:26 year:1981 number:3 month:11 pages:191-202 https://doi.org/10.1007/BF00614756 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 26 1981 3 11 191-202
allfields_unstemmed	10.1007/BF00614756 doi (DE-627)OLC2074108036 (DE-He213)BF00614756-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Ghezzi, C. verfasserin aut Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 26(1981), 3 vom: Nov., Seite 191-202 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:26 year:1981 number:3 month:11 pages:191-202 https://doi.org/10.1007/BF00614756 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 26 1981 3 11 191-202
allfieldsGer	10.1007/BF00614756 doi (DE-627)OLC2074108036 (DE-He213)BF00614756-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Ghezzi, C. verfasserin aut Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 26(1981), 3 vom: Nov., Seite 191-202 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:26 year:1981 number:3 month:11 pages:191-202 https://doi.org/10.1007/BF00614756 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 26 1981 3 11 191-202
allfieldsSound	10.1007/BF00614756 doi (DE-627)OLC2074108036 (DE-He213)BF00614756-p DE-627 ger DE-627 rakwb eng 530 620 VZ 530 VZ UA 9001.A VZ rvk Ghezzi, C. verfasserin aut Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels 1981 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier © Springer-Verlag 1981 Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. Enthalten in Applied physics. A, Materials science & processing Springer-Verlag, 1981 26(1981), 3 vom: Nov., Seite 191-202 (DE-627)129861340 (DE-600)283365-7 (DE-576)015171930 0947-8396 nnns volume:26 year:1981 number:3 month:11 pages:191-202 https://doi.org/10.1007/BF00614756 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_11 GBV_ILN_20 GBV_ILN_21 GBV_ILN_22 GBV_ILN_23 GBV_ILN_30 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_70 GBV_ILN_105 GBV_ILN_121 GBV_ILN_130 GBV_ILN_150 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2006 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_4012 GBV_ILN_4046 GBV_ILN_4082 GBV_ILN_4103 GBV_ILN_4126 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4310 GBV_ILN_4313 GBV_ILN_4315 GBV_ILN_4318 GBV_ILN_4319 GBV_ILN_4323 GBV_ILN_4700 UA 9001.A AR 26 1981 3 11 191-202
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author	Ghezzi, C.
spellingShingle	Ghezzi, C. ddc 530 rvk UA 9001.A Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
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title	Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
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title_full	Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
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title_sort	space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
title_auth	Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
abstract	Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. © Springer-Verlag 1981
abstractGer	Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. © Springer-Verlag 1981
abstract_unstemmed	Abstract The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed. © Springer-Verlag 1981
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title_short	Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels
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